55N120 Search Results

55N120 Price and Stock

Filter by Manufacturer


IXYS Corporation IXYH55N120A4 IGBT PT 1200V 175A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH55N120A4	Tube	598		1	1 $12.82 10 $12.82 100 $7.74733 1000 $6.36663 10000 $6.36663	Buy Now
Mouser Electronics	IXYH55N120A4		1,593			1 $10.87 10 $9 100 $6.61 1000 $6.36 10000 $6.36	Buy Now
Newark	IXYH55N120A4	Bulk			300	1 - 10 - 100 - 1000 $6.68 10000 $6.68	Buy Now
TTI	IXYH55N120A4	Tube			300	1 - 10 - 100 - 1000 $6.34 10000 $6.34	Buy Now
IXYS Corporation IXYT55N120A4HV IGBT PT 1200V 175A TO-268HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYT55N120A4HV	Tube	228		1	1 $15.73 10 $15.73 100 $9.67667 1000 $8.29888 10000 $8.29888	Buy Now
Mouser Electronics	IXYT55N120A4HV		403			1 $13.81 10 $13.81 100 $8.81 1000 $8.29 10000 $8.29	Buy Now
Newark	IXYT55N120A4HV	Bulk			300	1 - 10 - 100 - 1000 $8.7 10000 $8.7	Buy Now
TTI	IXYT55N120A4HV	Tube			300	1 - 10 - 100 - 1000 $8.21 10000 $8.21	Buy Now
IXYS Corporation IXFN55N120SK SIC AND MULTICHIP DISCRETE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN55N120SK	Tube	182		1	1 $68.95 10 $53.119 100 $68.95 1000 $68.95 10000 $68.95	Buy Now
Hammond Manufacturing 1455N1202 BOX ALUM NATURAL 4.72"L X 4.06"W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1455N1202	Bulk	90		1	1 $22.63 10 $22.63 100 $14.85 1000 $14.85 10000 $14.85	Buy Now
Mouser Electronics	1455N1202		76			1 $22.59 10 $18.07 100 $14.85 1000 $14.85 10000 $14.85	Buy Now
Newark	1455N1202	Bulk	175		1	1 $23.33 10 $18.78 100 $15.44 1000 $15.44 10000 $15.44	Buy Now
RS	1455N1202	Bulk			1	1 $22.65 10 $19.26 100 $16.08 1000 $16.08 10000 $16.08	Get Quote
TME	1455N1202		10		1	1 $16.97 10 $14.05 100 $13.2 1000 $13.2 10000 $13.2	Buy Now

Powell Electronics	1455N1202		116		1	1 $21.6 10 $21.6 100 $21.6 1000 $21.6 10000 $21.6	Buy Now
Master Electronics	1455N1202					1 $20.48 10 $18.28 100 $16.27 1000 $15.6 10000 $15.6	Buy Now
Hammond Manufacturing 1455N1202BK BOX ALUM BLACK 4.72"L X 4.06"W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1455N1202BK	Bulk	82		1	1 $24.27 10 $24.27 100 $16.0625 1000 $16.0625 10000 $16.0625	Buy Now
Mouser Electronics	1455N1202BK		457			1 $23.03 10 $19.39 100 $16.57 1000 $16.57 10000 $16.57	Buy Now
Newark	1455N1202BK	Bulk	12		1	1 $22.93 10 $20.24 100 $18.21 1000 $18.21 10000 $18.21	Buy Now
	1455N1202BK	Bulk			1	1 $22.93 10 $20.24 100 $18.21 1000 $18.21 10000 $18.21	Buy Now
RS	1455N1202BK	Bulk			1	1 $22.27 10 $18.93 100 $17.15 1000 $17.15 10000 $17.15	Get Quote
TME	1455N1202BK		11		1	1 $18.49 10 $15.41 100 $14.48 1000 $14.48 10000 $14.48	Buy Now

Powell Electronics	1455N1202BK		103		1	1 $23.36 10 $23.36 100 $23.36 1000 $23.36 10000 $23.36	Buy Now
Master Electronics	1455N1202BK					1 $22.16 10 $19.77 100 $17.6 1000 $16.88 10000 $16.88	Buy Now
New Advantage Corporation	1455N1202BK		29		1	1 - 10 $22.38 100 $20.83 1000 $20.83 10000 $20.83	Buy Now

Find more 55N120 price and stock on Findchips.com

55N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
55N120D1 Abstract: No abstract text available Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions	Original	55N120 55N120 OT-227 E153432 IXDN55N120 D-68623 55N120D1	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20	Original	55N120A OT-227	PDF
IXSN55N120A Abstract: on 3150 Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous	Original	55N120A OT-227 IXSN55N120A on 3150	PDF
Untitled Abstract: No abstract text available Text: IXDN 55N120 D1 VCES = 1200 V = 100 A IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR	Original	55N120 OT-227 E153432 IXDN55N120	PDF
IXDN55N120AU1 Abstract: MJ 1241 Text: High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability C VCES = 1200 V IC25 = 85 A VCE sat typ = 2.5 V G Preliminary Data E E Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	55N120AU1 OT-227 E153432 IXDN55N120AU1 MJ 1241	PDF
Untitled Abstract: No abstract text available Text: 1IXSN 55N120AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability G E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM E Maximum Ratings 1200 1200 V A Continuous Transient ±20 ±30 V V IC25 IC90	Original	55N120AU1	PDF
Untitled Abstract: No abstract text available Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200	Original	55N120AU1 OT-227	PDF
fast diode SOT-227 Abstract: No abstract text available Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200	Original	55N120AU1 fast diode SOT-227	PDF
55N120AU1 Abstract: No abstract text available Text: High Voltage IGBT with Diode IXSN 55N120AU1 VCES IC25 VCE sat = 1200 V = 110 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM	Original	55N120AU1 55N120AU1	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous	Original	55N120A OT-227	PDF
55N120 Abstract: 55n120d1 ixdn 55 n 120 d1 IXDN55N120D1 IXDN IXDN55N120 Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G miniBLOC, SOT-227 B E153432 E G G E E IXDN 55N120 IXDN 55N120 D1 E C Symbol Conditions VCES TJ = 25°C to 150°C	Original	55N120 55N120 OT-227 E153432 IXDN55N120 55n120d1 ixdn 55 n 120 d1 IXDN55N120D1 IXDN IXDN55N120	PDF
55N120 Abstract: 200NS40 IXDN55N120 55n120d1 Text: IXDN 55N120 D1 VCES = 1200 V IC25 = 100 A VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR	Original	55N120 OT-227 E153432 IXDN55N120 200NS40 IXDN55N120 55n120d1	PDF
diode B4 Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1 Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B	Original	O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF

7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
92520E Abstract: No abstract text available Text: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings	OCR Scan	55N120AU1 Cto150 OT-227 E153432 92520E	PDF
55N120D1 Abstract: ixdn 30 n 120 d1 Text: □ IXYS IXDN 55N120 IXDN 55N120 D1 High Voltage IGBT with optional Diode V CES 1200 V 100 A 2.3 V ^C25 V CE sat typ S hort C ircuit SO A Capability Square RBSOA IX D N 5 5 N 1 2 0 Preliminary Data IX D N 5 5 N 1 2 0 D1 miniBLOC, SOT-227 B E153432 E Symbol	OCR Scan	55N120 55N120 OT-227 E153432 55N120D1 ixdn 30 n 120 d1	PDF
0504N Abstract: No abstract text available Text: □ IXYS High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability V CES 1200 V ^C25 85 A V C E sat typ 2.5 V Preliminary Data Maximum Ratings Symbol Test Conditions v CES VCGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M£i	OCR Scan	55N120AU1 OT-227 0504N	PDF
Untitled Abstract: No abstract text available Text: n ix Y S High Voltage IGBT IXSN 55N120A VCES IC25 vCE sat = 1200 V = 110 A = 4V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj =25°Cto150°C 1200 V VCGR Tj = 25° C to 150° C; RQE= 1 Mi2 1200 A v GES v GEM Continuous ±20 V	OCR Scan	55N120A Cto150 OT-227 E153432	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1	PDF
BTS 3900 a Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device	OCR Scan	T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1	PDF
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B	PDF

55N120 Search Results

55N120 Price and Stock

IXYS Corporation IXYH55N120A4

IXYS Corporation IXYT55N120A4HV

IXYS Corporation IXFN55N120SK

Hammond Manufacturing 1455N1202

Hammond Manufacturing 1455N1202BK

55N120 Datasheets Context Search

55N120D1

Untitled

IXSN55N120A

Untitled

IXDN55N120AU1

Untitled

Untitled

fast diode SOT-227

55N120AU1

Untitled

55N120

55N120

diode B4

7n60b

7N60B equivalent

92520E

55N120D1

0504N

Untitled

B1116

40n80

IXBH 40N160

BTS 3900 a

8n80