5N60 Search Results

5N60 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
H5N6001P-E		Renesas Electronics Corporation	Nch Single Power Mosfet 600V 20A 380Mohm To-3P
H5N6004PL-E		Renesas Electronics Corporation	N Channel MOSFET High Speed Power Switching

5N60 Price and Stock

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Micro Commercial Components MCU05N60A-TP MOSFET N-CH 600V 4.5A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCU05N60A-TP	Cut Tape	14,417		1	1 $1.68 10 $1.065 100 $1.68 1000 $0.51303 10000 $0.51303	Buy Now
	MCU05N60A-TP	Digi-Reel	14,417		1	1 $1.68 10 $1.065 100 $1.68 1000 $0.51303 10000 $0.51303	Buy Now
	MCU05N60A-TP	Reel	10,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.46042	Buy Now
Vishay Siliconix SIHK075N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK075N60E-T1-GE3	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.29383	Buy Now
	SIHK075N60E-T1-GE3	Cut Tape	25		1	1 $7.84 10 $5.321 100 $5.321 1000 $5.321 10000 $5.321	Buy Now
Vishay Siliconix SIHK105N60EF-T1GE3 E SERIES POWER MOSFET POWERPAK 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK105N60EF-T1GE3	Cut Tape	1,990		1	1 $6.46 10 $4.346 100 $6.46 1000 $2.5825 10000 $2.5825	Buy Now
	SIHK105N60EF-T1GE3	Digi-Reel	1,990		1	1 $6.46 10 $4.346 100 $6.46 1000 $2.5825 10000 $2.5825	Buy Now
Infineon Technologies AG IKB15N60TATMA1 IGBT TRENCH FS 600V 30A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKB15N60TATMA1	Digi-Reel	1,559		1	1 $3.02 10 $1.959 100 $3.02 1000 $1.09568 10000 $1.09568	Buy Now
	IKB15N60TATMA1	Cut Tape	1,559		1	1 $3.02 10 $1.959 100 $3.02 1000 $1.09568 10000 $1.09568	Buy Now
	IKB15N60TATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.01263 10000 $1.01263	Buy Now
Chip1Stop	IKB15N60TATMA1	Cut Tape	1,000			1 $1.99 10 $1.35 100 $1 1000 $1 10000 $1	Buy Now
STMicroelectronics STF35N60DM2 MOSFET N-CH 600V 28A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF35N60DM2	Tube	920		1	1 $4.21 10 $4.21 100 $2.3462 1000 $2.3462 10000 $2.3462	Buy Now
Avnet Silica	STF35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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5N60 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
5N60	Unisonic Technologies	4.5 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
5N60L	Unisonic Technologies	4.5 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
5N60-TA3-T	Unisonic Technologies	4.5 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
5N60-TF3-T	Unisonic Technologies	4.5 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF

5N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5n60p Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	5N60P O-220 O-263 O-263 O-220) 405B2 5n60p
5N60B Abstract: 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-252 O-251 QW-R502-065 5N60B 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L
utc 5n60l Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	O-220 O-220F O-220F1 O-220F2 QW-R502-065 utc 5n60l 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
5N60 Abstract: 5N60L 5N60-TA3-T UTC5N60 5N60 datasheet 5N60-TF3-T utc 5n60l Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-220F 5N60L QW-R502-065 5N60 5N60L 5N60-TA3-T UTC5N60 5N60 datasheet 5N60-TF3-T utc 5n60l
5N60G Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	QW-R502-065 5N60G
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	5N60L QW-R502-065
5n60p Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 ID25 = 5 RDS on ≤ 1.7 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM	Original	PDF	5N60P 5n60p
5N60K Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N60K-MT Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	5N60K-MT 5N60K-MT QW-R205-038 5N60K
5n60b Abstract: 5N60A 5n60-b Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-220F 5N60L QW-R502-065 5n60b 5N60A 5n60-b
5N60P Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 ID25 = 5 RDS on ≤ 1.7 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM	Original	PDF	5N60P O-263 O-220 5N60P
5N60A Abstract: 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	QW-R502-065 5N60A 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L
5N60G Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	O-220F O-220 O-220F1 O-220F2 QW-R502-065 5N60G
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N60Z Preliminary Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	5N60Z 5N60Z QW-R502-909
G5N60 Abstract: 5n60 100SU utc 5n60l Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-252 O-251 O-220 QW-R502-065 G5N60 5n60 100SU utc 5n60l

5N60M Abstract: No abstract text available Text: 5N60M2, 5N60M2, 5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A 5N60M2	Original	PDF	STD5N60M2, STP5N60M2, STU5N60M2 O-220 STD5N60M2 STP5N60M2 O-220 DocID025318 5N60M
12v to 230v inverters circuit diagrams Abstract: 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note Text: Application Note 9017 June, 2001 Manufacturing Technology of a Small Capacity Inverter Using a Fairchild IGBT by Kee Ju Um, Yeong Joo Kim CONTENTS 1. 2. How to choose gate resistance .2	Original	PDF	SGP5N60RUFD 12v to 230v inverters circuit diagrams 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note
br 5n60 Abstract: 5N60 MOSFET IGSS 100nA VDS 20V MIL-HDBK-263 Text: E 5N60 VDSS=600V; ID=5.0A; RDS ON =2.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description DraintoSource Breakdown Voltage	Original	PDF	100nA br 5n60 5N60 MOSFET IGSS 100nA VDS 20V MIL-HDBK-263
HC 5287 Abstract: sck 104 thermistor 16T202DA1 RBS 3101 pm3a104k 16t202da1e 103 2KV ZNR 471 710 opto coupler HA 1156 wp Text: D C B A VDC_AD support DA1 KDS226 MC_CON AC2 AC1 PV3.3 DCP 1 3 PV3.3 C35 104,50V DCP 2 PV5 Q2 KRC101S R9 4.7KJ0 R39 100KF,1W R40 100KF,1W 100KF,1W R41 R42 100KF,1W VDC_FB Z1 ZNR 471 R51 4.7KJ0 support 2 1 R38 2.8KF0 2 1 PV5 U1 KA5H0280R SPS 2 2 support 500K,2W	Original	PDF	KDS226 KRC101S 100KF KA5H0280R 474/AC275V PM3A104K U1DL-44A HC 5287 sck 104 thermistor 16T202DA1 RBS 3101 pm3a104k 16t202da1e 103 2KV ZNR 471 710 opto coupler HA 1156 wp
Infineon Specific HCI Commands bluetooth Abstract: PBA31308 Q2331308 G0644 CLK32 PMB8753 bluemoon crystal 26 Mhz Bluetooth RSSI circuit diagram infineon HCI Text: P rod uc t O v erv i ew T3130-8XV10PO5-7600 Jan 2007 PBA 31308 Bluetooth QD ID : B012097/B012098 UniStone BlueMoon Universal Platform N e v e r s t o p t h i n k i n g . Edition 2007-01-31 Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 2007.	Original	PDF	T3130-8XV10PO5-7600 B012097/B012098 T3130-8XV10PO5-7600, Infineon Specific HCI Commands bluetooth PBA31308 Q2331308 G0644 CLK32 PMB8753 bluemoon crystal 26 Mhz Bluetooth RSSI circuit diagram infineon HCI
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
K6R4016V1D-UI10 Abstract: LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701 Text: LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide June 2009 Revision: EB26_02.6 LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide Lattice Semiconductor Introduction This document describes the features and functionality of the LatticeMico32 /DSP Development Board for	Original	PDF	LatticeMico32/DSP LatticeMico32TM/DSP LatticeMico32 100mm, 150mm, 120mm, K6R4016V1D-UI10 LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701
igbt 300V 5A Abstract: SGW5N60RUF 5A IGBT Text: SGW 5N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters	OCR Scan	PDF	SGW5N60RUF igbt 300V 5A SGW5N60RUF 5A IGBT
SGW5N60RUFD Abstract: No abstract text available Text: SGW 5N60RUFD FE A TU R ES C O -P A K IG B T D2-PAK * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) 4* A P P LIC A TIO N S	OCR Scan	PDF	SGW5N60RUFD SGW5N60RUFD
2N80 Abstract: 5P30 Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTINGG LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14 J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _	OCR Scan	PDF	DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

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5N60 Search Results

5N60 Result Highlights (2)

5N60 Price and Stock

Micro Commercial Components MCU05N60A-TP

Vishay Siliconix SIHK075N60E-T1-GE3

Vishay Siliconix SIHK105N60EF-T1GE3

Infineon Technologies AG IKB15N60TATMA1

STMicroelectronics STF35N60DM2

5N60 Datasheets (4)

5N60 Datasheets Context Search

5n60p

5N60B

utc 5n60l

5N60

5N60G

Untitled

5n60p

5N60K

5n60b

5N60P

5N60A

5N60G

Untitled

G5N60

5N60M

12v to 230v inverters circuit diagrams

br 5n60

HC 5287

Infineon Specific HCI Commands bluetooth

2n60p

K6R4016V1D-UI10

igbt 300V 5A

SGW5N60RUFD

2N80