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    600L270JT200 Search Results

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    600L270JT200 Price and Stock

    Kyocera AVX Components 600L270JT200T4K

    CAP CER 27PF 200V C0G/NP0 0402
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    DigiKey 600L270JT200T4K Reel 12,000 4,000
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    • 10000 $0.25887
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    Avnet Americas 600L270JT200T4K Reel 12 Weeks 4,000
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    Mouser Electronics 600L270JT200T4K
    • 1 $0.86
    • 10 $0.47
    • 100 $0.384
    • 1000 $0.277
    • 10000 $0.222
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    TTI 600L270JT200T4K Reel 4,000
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    Richardson RFPD 600L270JT200T4K 4,000
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    600L270JT200T4K 4,000
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    Kyocera AVX Components 600L270JT200T

    CAP CER 27PF 200V C0G/NP0 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 600L270JT200T Reel 2,000
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    • 10000 $0.38502
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    Avnet Americas 600L270JT200T Reel 12 Weeks 500
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    Mouser Electronics 600L270JT200T 1,477
    • 1 $0.77
    • 10 $0.54
    • 100 $0.489
    • 1000 $0.393
    • 10000 $0.383
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    Arrow Electronics 600L270JT200T 2,500 12 Weeks 2,000
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    TTI 600L270JT200T Reel 500
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    • 10000 $0.383
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    Richardson RFPD 600L270JT200T 4,500 1,500
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    Kyocera AVX Components 600L270JT200T10K

    Silicon RF Capacitors / Thin Film MLC 600
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600L270JT200T10K
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    Richardson RFPD 600L270JT200T10K 10,000
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    KYOCERA AVX Components 600L270JT200T

    Cap Ceramic 27pF 200V C0G 5% Pad SMD 0402 125°C Ultra Low ESR T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 600L270JT200T 2,000 2,000
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    Others 600L270JT200T

    INSTOCK
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    Chip 1 Exchange 600L270JT200T 6,115
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    600L270JT200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    600L270JT200T American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 27PF 200V 5% NP0 0402 Original PDF

    600L270JT200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    600S2R7BT250XT

    Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		PDF SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85

    1812C105KAT2A

    Abstract: No abstract text available
    Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems – General Purpose RF Power – Jammers – Radar – Professional radio systems – WiMAX – Wideband ampliiers


    Original     		PDF T1G6000528-Q3 T1G6000528-Q3 1812C105KAT2A

    thermistor 100k

    Abstract: ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt
    Text: SLD-1026Z 3 Watt Discrete LDMOS Device Plastic Surface Mount Package SLD-1026Z Preliminary 3 WATT DISCRETE LDMOS DEVICE PLASTIC SURFACE MOUNT PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Z Part Number Package: SOF-26 Product Description


    Original     		PDF SLD-1026Z SOF-26 SLD-1026Z-EVAL-2 SLD-1026Z-EVAL-3 SLD-1026Z-EVAL-4 SLD-1026Z-EVAL-5 SLD-1026Z-EVAL-6 SLD-1026Z-EVAL-7 thermistor 100k ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt

    Untitled

    Abstract: No abstract text available
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 TQGaN25

    CRCW0805100F100

    Abstract: Ghz dB transistor
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 CRCW0805100F100 Ghz dB transistor

    Untitled

    Abstract: No abstract text available
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 TQGaN25

    1812C105KAT2A

    Abstract: C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101
    Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers


    Original     		PDF T1G6000528-Q3 T1G6000528-Q3 1812C105KAT2A C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101

    600S4R7BT250

    Abstract: ecj2yb1h104k
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		PDF SLD-1026Z SLD-1026Z 2700MHz. ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V 600S4R7BT250 ecj2yb1h104k

    thermistor 100k

    Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
    Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,


    Original     		PDF AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		PDF SLD-1026Z SLD-1026Z 2700MHz. SOF-26 ECJ2YB1H104K ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V