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onsemi NTD360N65S3H POWER MOSFET, N-CHANNEL, SUPERFE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD360N65S3H	Cut Tape	2,818		1	1 $2.56 10 $1.75 100 $2.56 1000 $0.99725 10000 $0.99725	Buy Now
Avnet Americas	NTD360N65S3H	Reel		0 Weeks, 2 Days	625	1 $0.976 10 $0.976 100 $0.976 1000 $0.976 10000 $0.976	Buy Now
Mouser Electronics	NTD360N65S3H		6,385			1 $2.48 10 $1.75 100 $1.26 1000 $0.998 10000 $0.997	Buy Now
Newark	NTD360N65S3H	Cut Tape	4,999		1	1 $2.27 10 $2.27 100 $1.55 1000 $0.929 10000 $0.898	Buy Now
Rochester Electronics	NTD360N65S3H		812		1	1 $1.11 10 $1.11 100 $1.04 1000 $0.9435 10000 $0.9435	Buy Now

Richardson RFPD	NTD360N65S3H				2,500	1 - 10 - 100 - 1000 - 10000 $1	Buy Now
Avnet Silica	NTD360N65S3H			23 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTD360N65S3H			24 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTD360N65S3H		2,083			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wuhan P&S	NTD360N65S3H		2,380		1	1 $2.79 10 $2.79 100 $1.78 1000 $1.35 10000 $1.35	Buy Now
onsemi FCD360N65S3R0 MOSFET N-CH 650V 10A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCD360N65S3R0	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.9235	Buy Now
	FCD360N65S3R0	Cut Tape	2,500		1	1 $2.41 10 $1.646 100 $2.41 1000 $0.9235 10000 $0.9235	Buy Now
	FCD360N65S3R0	Digi-Reel	2,500		1	1 $2.41 10 $1.646 100 $2.41 1000 $0.9235 10000 $0.9235	Buy Now
Mouser Electronics	FCD360N65S3R0		2,603			1 $1.6 10 $1.22 100 $0.969 1000 $0.924 10000 $0.923	Buy Now
Newark	FCD360N65S3R0	Cut Tape	2,250		1	1 $2.55 10 $1.99 100 $1.49 1000 $1.17 10000 $1.17	Buy Now
Rochester Electronics	FCD360N65S3R0		462		1	1 $1.03 10 $1.03 100 $0.9682 1000 $0.8755 10000 $0.8755	Buy Now
Richardson RFPD	FCD360N65S3R0				2,500	1 - 10 - 100 - 1000 - 10000 $0.92	Buy Now

Avnet Asia	FCD360N65S3R0			22 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.94718	Buy Now
Avnet Silica	FCD360N65S3R0			23 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	FCD360N65S3R0	Cut Tape	2,500			1 $0.857 10 $0.854 100 $0.848 1000 $0.844 10000 $0.844	Buy Now
EBV Elektronik	FCD360N65S3R0			24 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	FCD360N65S3R0		62,500		1	1 $2.58 10 $2.58 100 $1.65 1000 $1.25 10000 $1.25	Buy Now
IXYS Corporation IXXX160N65B4 IGBT 650V 310A 940W PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXX160N65B4	Tube	833		1	1 $23.41 10 $23.41 100 $15.97933 1000 $15.97933 10000 $15.97933	Buy Now
TME	IXXX160N65B4				1	1 $19.12 10 $15.24 100 $13.55 1000 $13.55 10000 $13.55	Get Quote
onsemi NVB260N65S3 SF3 650V EASY 260MOHM D2PAK AUTO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVB260N65S3	Digi-Reel	740		1	1 $2.97 10 $2.04 100 $2.97 1000 $2.97 10000 $2.97	Buy Now
	NVB260N65S3	Cut Tape	740		1	1 $2.97 10 $2.04 100 $2.97 1000 $2.97 10000 $2.97	Buy Now
Rochester Electronics	NVB260N65S3		6,400		1	1 $1.35 10 $1.35 100 $1.27 1000 $1.15 10000 $1.15	Buy Now
Avnet Silica	NVB260N65S3			21 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVB260N65S3			22 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVB260N65S3		1,600		1	1 - 10 - 100 - 1000 $1.54 10000 $1.44	Buy Now

Wuhan P&S	NVB260N65S3		610		1	1 $3.38 10 $3.38 100 $2.16 1000 $1.64 10000 $1.64	Buy Now
STMicroelectronics STW60N65M5 MOSFET N-CH 650V 46A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STW60N65M5	Tube	575		1	1 $10.18 10 $10.18 100 $8.025 1000 $8.025 10000 $8.025	Buy Now
Bristol Electronics	STW60N65M5		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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60N6 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
60N60		IXYS	Ultra-low Vce(sat) IGBT		Original	PDF

60N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60n6 Abstract: 60N60 IC tl 072 IC100 60N60U1 Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600	Original	PDF	60N60U1 ISOPLUS247TM IC100 60n6 60N60 IC tl 072 IC100 60N60U1
MOSFET 60n60 Abstract: 60N60 transistor 60N60 TAB 429 H Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	PDF	60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H
60N60C2 Abstract: ixgh60n60c2 Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2
IXGN60N60C2 Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	PDF	60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	PDF	60N60B2D1 IC110 O-264 PLUS247 2x61-06A
siemens igbt 75a Abstract: PLUS247 Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	PDF	60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247
IXGR60N60C2 Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2
60-06A Abstract: 60N60C2D1 60N60C2D IF110 PLUS247 Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	PDF	60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247
60N60C2 Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1 Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1
60n60 igbt Abstract: ic 307 ex 60N60 Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	60N60 OT-227B 60n60 igbt ic 307 ex 60N60
IXGH50N60BD1-P1 Abstract: ISOPLUS247TM 60N60U1 Text: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A
60N60C2D1 Abstract: No abstract text available Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	PDF	60N60C2D1 IC110 O-264 IF110 PLUS247 0-06A

60n60b Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A
60N60B2D1 Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1 Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	PDF	60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
MOSFET 60n60 Abstract: IXFN SOT227 Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	PDF	60N60 OT-227 E153432 MOSFET 60n60 IXFN SOT227
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600	Original	PDF	60N60U1 ISOPLUS247TM IC100
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C	OCR Scan	PDF	60N60
3580J Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings	OCR Scan	PDF	60N60 OT-227B, IXGN6QN60 3580J
60N60 Abstract: No abstract text available Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous	OCR Scan	PDF	60N60 60N60 O-247 O-268 O-264 1999IXYS
ixgn60n60 Abstract: No abstract text available Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous	OCR Scan	PDF	60N60 OT-227BminiBLOC ixgn60n60
60N60 Abstract: G 60N60 Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75	OCR Scan	PDF	60N60 O-247 60N60 G 60N60
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

60N6 Search Results

60N6 Price and Stock

onsemi NTD360N65S3H

onsemi FCD360N65S3R0

IXYS Corporation IXXX160N65B4

onsemi NVB260N65S3

STMicroelectronics STW60N65M5

60N6 Datasheets (1)

60N6 Datasheets Context Search

60n6

MOSFET 60n60

60N60C2

IXGN60N60C2

Untitled

siemens igbt 75a

IXGR60N60C2

60-06A

60N60C2

60n60 igbt

IXGH50N60BD1-P1

Untitled

Untitled

60N60C2D1

60n60b

60N60B2D1

MOSFET 60n60

Untitled

Untitled

3580J

60N60

ixgn60n60

60N60

ixgh 1500