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    SEC KM616U1000BLTI-10L

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    ComSIT USA KM616U1000BLTI-10L 400
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    Others KM616U1000BLTI10L

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    Samsung Semiconductor KM616U1000BLTI10L

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    616U1000B Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, 616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily


    OCR Scan     		PDF KM616V1000B, KM616U1000B KM616V1OOOB 616U1000B 44-TSQ P2-400F/R 616V1000B KM616U1 KM61SV1000B KM616U10008

    km616u1000b

    Abstract: No abstract text available
    Text: KM616V1000B, 616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and 616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, 616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0


    OCR Scan     		PDF KM616V1000B, KM616U1000B 100ns 616V1000B 1000B

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, 616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP 7Tb4142

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, 616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996


    OCR Scan     		PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616V1QQGB KM616U1QQQB

    KM616U1000B

    Abstract: KM616V1000B KM616V1000
    Text: KM616V1000B, 616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP als-10 KM616V1000

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U10Q0B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • The KM616V1000B and 616U1000B family are fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


    OCR Scan     		PDF KM616V1000B, KM616U10Q0B 64Kx16 KM616V1000B KM616U1000B 64Kx16 71b4ms GG3b73G