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    64MB EDO DRAM SIMM Search Results

    64MB EDO DRAM SIMM Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    64MB EDO DRAM SIMM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232004CV/CVG 4Byte 32Mx32 SIMM 16Mx4 EDO base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CV/CVG DRAM MODULE KMM53232004CV/CVG


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    KMM53232004CV/CVG 32Mx32 16Mx4 KMM53232004CV/CVG 16Mx4, KMM53232004C 32Mx32bits 16Mx4bits PDF

    edo dram 50ns 72-pin simm

    Abstract: edo dram 72-pin simms 64mb dram 72-pin simms 64mb BDQ30 64mb edo dram simm BDQ22 4c16m4 BDQ31 72 simm edo dram 64mb
    Text: SL36 S/T 4C16M4F-AxxC 16M X 36 Bits (64MB) DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: Part # tRAC tCAC tRC The SiliconTech SL36(S/T)4C16M4F-AxxC is a 16M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).


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    4C16M4F-AxxC 72-Pin 4C16M4F-AxxC 32-pin 400-mil -A50C -A60C 104ns cycles/64ms A0-A11 edo dram 50ns 72-pin simm edo dram 72-pin simms 64mb dram 72-pin simms 64mb BDQ30 64mb edo dram simm BDQ22 4c16m4 BDQ31 72 simm edo dram 64mb PDF

    edo dram 72-pin simms 64mb

    Abstract: dram 72-pin simms 64mb 64mb 72-pin simm SL32 64mb edo dram simm simm 64MB BDQ28
    Text: SL32 S/T 4C16M4E-AxxC 16M X 32 Bits (64MB) DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SL32(S/T)4C16M4E-AxxC is a 16M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module


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    4C16M4E-AxxC 72-Pin 4C16M4E-AxxC 32-pin 400-mil -A60C 104ns -A70C 124ns cycles/64ms edo dram 72-pin simms 64mb dram 72-pin simms 64mb 64mb 72-pin simm SL32 64mb edo dram simm simm 64MB BDQ28 PDF

    64Mb simm

    Abstract: VIL22 simm 64MB 72 simm dram
    Text: 64MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS16MED3260V Description Dimensions The TS16MED3260V is a 16M by 32-bit dynamic RAM module with 8pcs of 16Mx4 DRAMs Side Millimeters Inches assembled on the printed circuit board. A 107.95 ± 0.400 4.250 ± 0.016


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    16Mx4 TS16MED3260V TS16MED3260V 32-bit 16Mx4 64Mb simm VIL22 simm 64MB 72 simm dram PDF

    TS16MED3260N

    Abstract: No abstract text available
    Text: 64MB 72 PIN EDO DRAM SIMM With 16Mx4 5VOLT TS16MED3260N Description Dimensions The TS16MED3260N is a 16M by 32-bit dynamic RAM module with 8pcs of 16Mx4 DRAMs Side Millimeters Inches assembled on the printed circuit board. A 107.95 ± 0.40 4.250 ± 0.016 The TS16MED3260N is optimized for application to


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    16Mx4 TS16MED3260N TS16MED3260N 32-bit 16Mx4 PDF

    edo dram 72-pin simms 64mb

    Abstract: 168pin dram socket 64mb 72-pin simm 64mb edo dram simm dram 72-pin simms 64mb edo dram 72-pin SO DIMM simm 256mb
    Text: DRAM Module Product Overview. Preliminary DRAM Module Product Overview Introduction Module Descriptions DRAMs may be supplied on modules known as SIMMs, DIMMs, SO DIMMs or IC DRAM cards. These assemblies are designed in a well-defined industry standard format. There are significant


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    simm 64MB

    Abstract: edo dram 72-pin simms 64mb simm 256mb
    Text: Preliminary DRAM Module Product Overview Introduction Module Descriptions DRAMs may be supplied on modules known as SIMMs, DIMMs, SO DIMMs or 1C DRAM cards. These assemblies are designed in a well-defined industry standard format. There are significant advantages to the system designer of using these


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    m7401

    Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6


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    1GMM781000CNS-6 GMM791GOOCNS-6 GMM784000CS-6 GMM794000CS-6 GMM781000CNS-7 GMM791000CNS-7 GMM784000CS-7 GMM794000CS-7 GMM7321OOOCS/SG-6 GMM732101OCS/SG-6 m7401 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb PDF

    GMM732411

    Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6


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    OMM781000CNS-6 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 GMM781OOOCNS-7 GMM79I GMM784000CS-7 GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM732411 GMM7362000 GMM732411OCNS OMM781000CNS PDF

    sm5801

    Abstract: 64mb edo dram simm 16mb simm module dram 72-pin simm 128mb dram "32mb x 32" simm
    Text: SMRTD005 SMART Modular Technologies QUICK REFERENCE GUIDE: SDRAM DIMM MODULES DENSITY ORG. BASE DRAMs ERROR CORRECTION PART NUMBER* 1 4 4 P IN , UNBUFFERED, SERIA L PRESENCE DETECT, 3 .3 V S O D IM M s CO CO 16MB 16MB 32MB 32MB lM x 64 2 M x 64 2 M x 64 4M X 64


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    SMRTD005 564013174NWUU SM564023174NWUU SM564028074NWUU SM564048074NWUU SM564044074NWUU SM572028074DWUU SM572048074DWUU SM572044074DWUU SM572028074EWUU sm5801 64mb edo dram simm 16mb simm module dram 72-pin simm 128mb dram "32mb x 32" simm PDF

    64mb edo dram simm

    Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
    Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt


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    VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CJ 174TGA 26418165BJGA 26418165BTGA VE46417805BJGA 64mb edo dram simm Dram 168 pin EDO 8Mx8 4Mx4 dram simm PDF

    LG 2MX32 EDO simm module

    Abstract: GMM732201 GMM732411OCNS
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32


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    \GMM781000CNS-6 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 1GMM781OOOCNS-7 1GMM791000CNS-7 1GMM784000CS-7 1GMM794000CS-7 1Mx40 2Mx32 LG 2MX32 EDO simm module GMM732201 GMM732411OCNS PDF

    VCC166

    Abstract: 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb
    Text: L-71001-0D MITSUBISHI ELECTRIC REV Mitsubishi Memory Module Technical Direction Large Capacity 64MB 128MB 256MB 512MB 1GB High Speed EDO SDRAM Small outline DDR SDRAM RDRAMTM 72pin S.O.DIMM Memory Module 144pin S.O.DIMM 200pin DDR S.O. DIMM 72pin x36 168pin


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    L-71001-0D 128MB 256MB 512MB 72pin 144pin 200pin 168pin VCC166 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb PDF

    64mb edo dram simm

    Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
    Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s


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    Untitled

    Abstract: No abstract text available
    Text: SLC90E42 ADVANCE INFORMATION STANDARD MICROSYSTEMS CORPORATION SLC90E42 NorthBridge Member of High Performance TeXas Chipset FEATURES 324 Pin BGA North Bridge Chip Supports the Pentium C om patible Processor with Host Bus from 60 MHz to 75 MHz at 3.3V and


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    SLC90E42 SLC90E42 PDF

    R380EX-02

    Abstract: r380ex mouse 1208 386EX Intel386EX 4MB flash bios chip 8 pin
    Text: R38 0 E X DATA S H E ET H I G H - I N T E G R AT I O N I N T E L 3 8 6 P C - C O M P AT I B L E S Y S T E M C O N T R O L L E R WITH SUPPORT FOR EDO DRAM, ISABUS AND POWER MANAGEMENT PRODUCT OVERVIEW The RadiSys R380EX Embedded System Controller is a member of the RadiSys family


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    R380EX Intel386EX 512IOS R380EX R380EX-02 R380EX-02 mouse 1208 386EX 4MB flash bios chip 8 pin PDF

    RadiSys pfs

    Abstract: R300EX RADISYS R400EX R400EX 4MB flash bios chip intel 486 dx 33mhz r380ex 486 system bus INTEL 486 dx2 ULP486
    Text: RadiSys Long-Life System Controllers Product Family The RadiSys family of long-life, high-integration system controllers, the R300EX, R380EX and R400EX, support the Intel386* EX and Intel486* family of processors, extending the processor’s core functionality to a full


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    R300EX, R380EX R400EX, Intel386* Intel486* R400EX RadiSys pfs R300EX RADISYS R400EX 4MB flash bios chip intel 486 dx 33mhz 486 system bus INTEL 486 dx2 ULP486 PDF

    SRAM 256KB 6ns

    Abstract: DRAMs edo dram 50ns 72-pin simm 2mb 72-pin simm ibm comp 128m simm 72 pin 64mb edo dram simm 64mb 72-pin simm
    Text: D RAM Numbe ring Numbering Page 1 Contents IBM bb cc dd e f gg h - jj cc Index bb Product Family Density 01 03 DRAM SDRAM 4 5 16 17 18 64 65 66 4Mb, Normal Addressing 10/10, 10/9, 9/9 4Mb, Alternate Addressing (10/8) 16Mb, 4K Refresh 16Mb, 2K Refresh 16Mb, 1K Refresh


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    Untitled

    Abstract: No abstract text available
    Text: KMM5361205C2W/C2 WG DRAM MODULE 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS KMM5361205C2W/C2 WG DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .


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    KMM5361205C2W/C2 1Mx36 1MX16 KMM5361205CW/CWG KMM5361205C2W/C2WG KMM5361205C2W/C2WG KMM5361205C2W PDF

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


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    L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .


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    KMM5362205C2W/C2WG 2Mx36 KMM5362205CW/CWG KMM5362205C2W/C2WG 1Mx16 KMM5362205C2W 2Mx36bits PDF

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


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    L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


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    M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer.


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    KMM5362205C2W/C2WG 2Mx36 1MX16 KMM5362205CW/CWG KMM5362205C2W/C2WG KMM5362205C2W 2Mx36bits PDF