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    3M Interconnect 356-4-X72YD

    TAPE LABEL PROTECTION 4"X72YD
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    3M 3M-616-4--X-72YD

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    3M 3M-4056-4--X-7--25

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    3M 3M-4016-4--X-7--25

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    3M 3M-4026-4--X-7--25

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    64X72 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: L6472QX359AXSC3X 64x72 PC133 REGISTERED SDRAM LEGEND Performance Technology L6472QX359AXSC3X 64x72 PC133 REGISTERED SDRAM FEATURES • PC133 compliant • JEDEC-standard 168-pin, dual in-line memory module DIMM • Registered • 512MB ECC • Single +3.3V ±0.3V power supply


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    L6472QX3 59AXSC3X 64x72 PC133 59AXSC3X 168-pin, PDF

    TT 2240

    Abstract: DDR400
    Text: LEGEND L6472YC7-RU1HDC9B 512 Megabyte Registered ECC DDR400 DDR SDRAM Performance Technology L6472YC7-RU1HDC9B 64x72 512 Megabyte Registered ECC DDR400 DDR SDRAM FEATURES • · · · · · · · · · · 184-pin Un-buffered 8-Byte Dual-In-Line DDR SDRAM Two banks 32M x 72


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    L6472YC7-RU1HDC9B DDR400 L6472YC7-RU1HDC9B 64x72 184-pin 66-Lead L6472YC7-RUInputs TT 2240 PDF

    K4R571669A-FCK8

    Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
    Text: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary


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    K4R571669A/K4R881869A 256/288Mbit 16/18bit 1066MHz 260mV 300mV 800MHz 1066MHz 256/288Mb) K4R571669A-FCK8 K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9 PDF

    736-Pin

    Abstract: LSI coreware library 64X144
    Text: ADVANCE DATASHEET RC1800 Foundation Slice Family July 2005 The RapidChip RC1800 Foundation Platform ASIC Family, except for the RC1812 slice, is in NO-NEW-DESIGN Status as of July 2005. LSI Logic is not accepting new designs in this slice Family. Information in this datasheet is


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    RC1800 RC1812 DB14-000253-04 DB14-000253-04, DB14-000253-03 736-Pin LSI coreware library 64X144 PDF

    NT1GD64S8HB0G

    Abstract: 99127 NT1GD64S8HB0G-5T PC2700 PC3200 NT512D64S88B0G-6K
    Text: NT1GD64S8HB0G / NT512D64S88B0G / NT256D64SH4B0G NT1GD72S8PB0G / NT512D72S89B0G 1GB, 512MB, 256MB, 1GB ECC and 512MB(ECC) PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 512M bit Die B device Features • 184 Dual In-Line Memory Module (DIMM)


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    NT1GD64S8HB0G NT512D64S88B0G NT256D64SH4B0G NT1GD72S8PB0G NT512D72S89B0G 512MB, 256MB, 512MB PC3200 PC2700 99127 NT1GD64S8HB0G-5T PC2700 NT512D64S88B0G-6K PDF

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    600MHz DL-0118-07 direct rdram rambus 1200 PDF

    da53

    Abstract: DB26 0195c Outline T39
    Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


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    512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39 PDF

    diode t29

    Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
    Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including


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    EDR2518ABSE EDR2518AB EDR2518AB 1066MHz 288Mbits 800MHz 9375ns M01E0107 diode t29 EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E PDF

    da53

    Abstract: DB26 BE1210 DB62 ROP10
    Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application


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    256/288-Mbit 512Kx16/18x32s) 256/288-Mbit 600MHz 800MHz DL0060 DL0060 da53 DB26 BE1210 DB62 ROP10 PDF

    da53

    Abstract: DB26 DL010
    Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application


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    256/288-Mbit 1Mx16/18x16d) 256/288-Mbit 600MHz 800MHz DL0105 DL0105 da53 DB26 DL010 PDF

    Untitled

    Abstract: No abstract text available
    Text: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary


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    K4R881869A 288Mbit 18bit 1066MHz 260mV 300mV 288Mb) PDF

    NT512D64S88B0GY-5T

    Abstract: NT1GD64S8HB0GY-5T Nanya NT512D64SH8B0G
    Text: NT1GD64S8HB0GY / NT512D64S88B0GY / NT512D72S89B0GY / NT256D64SH4B0GY NT1GD64S8HB0G / NT512D64S88B0G / NT512D72S89B0G / NT256D64SH4B0G 1GB, 512MB, 256MB and 512MB ECC PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 512M bit Die B device


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    NT1GD64S8HB0GY NT512D64S88B0GY NT512D72S89B0GY NT256D64SH4B0GY NT1GD64S8HB0G NT512D64S88B0G NT512D72S89B0G NT256D64SH4B0G 512MB, 256MB NT512D64S88B0GY-5T NT1GD64S8HB0GY-5T Nanya NT512D64SH8B0G PDF

    HSP50415

    Abstract: 32 tap fir lowpass filter design in matlab modulator qpsk
    Text: HSP50415 TM Data Sheet March 2000 Wideband Programmable Modulator WPM File Number 4559.5 Features • Output Sample Rates . . . . . . . . . . . . . . . . . . to 100MSPS The HSP50415 Wideband Programmable Modulator (WPM) is a quadrature amplitude modulator/upconverter designed


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    HSP50415 HSP50415 16-bit 32 tap fir lowpass filter design in matlab modulator qpsk PDF

    MCR 22-8 transistor power

    Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
    Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.


    OCR Scan
    PDF

    K4R761869A-GCT9

    Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
    Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


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    K4R761869A 576Mbit 18bit 256/288Mb K4R761869A-GCT9 K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1 PDF

    HSP50415

    Abstract: Matlab 3-phase transformer design HSP50415EVAL1 HSP50415VI Q100 baseband QPSK matlab code 16 QAM adaptive modulation matlab bit-slice
    Text: HSP50415 TM Data Sheet March 2000 Wideband Programmable Modulator WPM File Number 4559.5 Features • Output Sample Rates . . . . . . . . . . . . . . . . . . to 100MSPS The HSP50415 Wideband Programmable Modulator (WPM) is a quadrature amplitude modulator/upconverter designed


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    HSP50415 100MSPS HSP50415 16-bit Matlab 3-phase transformer design HSP50415EVAL1 HSP50415VI Q100 baseband QPSK matlab code 16 QAM adaptive modulation matlab bit-slice PDF

    Untitled

    Abstract: No abstract text available
    Text: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary


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    K4R881869A 288Mbit 18bit 1066MHz 260mV 300mV 288Mb) PDF

    NT512D64S88B0GY

    Abstract: ddr dimm pinout NT512D64S88B0GY-5T NT1GD64S8HB0GY-5T NT512MD72S89B0GY-5T NT1GD64S8HB0G PC3200 DDR DIMM 512m non-ecc SPD dimm ddr pc3200 Nanya
    Text: NT1GD64S8HB0GY / NT512D64S88B0GY / NT512D72S89B0GY / NT256D64SH4B0GY NT1GD64S8HB0G / NT512D64S88B0G / NT512D72S89B0G / NT256D64SH4B0G 1GB, 512MB, 256MB and 512MB ECC PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 512M bit Die B device


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    NT1GD64S8HB0GY NT512D64S88B0GY NT512D72S89B0GY NT256D64SH4B0GY NT1GD64S8HB0G NT512D64S88B0G NT512D72S89B0G NT256D64SH4B0G 512MB, 256MB ddr dimm pinout NT512D64S88B0GY-5T NT1GD64S8HB0GY-5T NT512MD72S89B0GY-5T PC3200 DDR DIMM 512m non-ecc SPD dimm ddr pc3200 Nanya PDF

    Untitled

    Abstract: No abstract text available
    Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    512Kx16/18x32s) 600MHz DL-0118-050 PDF

    Untitled

    Abstract: No abstract text available
    Text: K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM 256/288Mbit RDRAM D-die 512K x 16/18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM™


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    K4R571669D K4R881869D 256/288Mbit 16/18bit 92balls Table19 PDF

    gigablaze

    Abstract: 11-G02 TRANSISTOR A98 0.18-um CMOS technology multiplexer data sheet LSI gigablaze LSI gigablaze serdes MIPS32 RC11XT404 lsi asic databook RC11XT432
    Text: ADVANCE DATASHEET RapidChip Xtreme Platform ASIC Family July 2004 DB08-000245-00 This document is advance. As such, it describes a product under development. This information is intended to help you evaluate the product. LSI Logic reserves the right to change or discontinue this proposed product without notice.


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    DB08-000245-00 DB08-000245-00, 672-Ball 896-Ball gigablaze 11-G02 TRANSISTOR A98 0.18-um CMOS technology multiplexer data sheet LSI gigablaze LSI gigablaze serdes MIPS32 RC11XT404 lsi asic databook RC11XT432 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 288M bits Direct Rambus DRAM µPD488588 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


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    PD488588 PD488588 288Mbits 600MHz 800MHz M01E0107 PDF

    MCR 22-8 transistor power

    Abstract: operation of sr latch using nor gates 2 bit magnitude comparator 0N80 half adder 74 on 5295 transistor carrier A022H AOI21 AOI211 10146 1987
    Text: Order this data sheet by HDC/D 2 5 1991 MOTOROLA HDC SERIES SEM ICONDUCTO R TECHNICAL DATA H IG H PER FO R M A NC E T R IP L E LAYER M ETAL HDC SERIES CMOS ARRAYS B u ilt o n a 1.0 m ic ro n , tr ip le - la y e r metal C M O S p ro ce ss, th e HDC S eries re p re se n ts a s ig n ific a n t a d v a n c e m e n t in m ic ro c h ip te c h n o lo g y .


    OCR Scan
    PDF

    RDRAM Clock

    Abstract: No abstract text available
    Text: Direct RDRAM 256/288-Mbit 512Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


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    256/288-Mbit 512Kx16/18x32s) 256/288-Mbit 600MHz 800MHz RDRAM Clock PDF