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    68U1000B Search Results

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    MSM 6290

    Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		PDF 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C MSM 6290 msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150

    27HC642

    Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		PDF 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C 27HC642 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S

    KM68U1000BLG8L

    Abstract: KM68V1000BLG7L
    Text: KM68V1000B, 68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 KM68V1000B 32-SOP, 32-TSO 68V1000B 68U1000B KM68U1000BLG8L KM68V1000BLG7L

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, 68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V 68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    KM68U1000BLG8L

    Abstract: 32SOP
    Text: KM68V1000B, 68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V 68U1000B family: 3.0V- -0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 KM68V1000B 32-SOP, 32-TSOP KM68U1000BLG8L 32SOP

    km616u1000b

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP 7Tb4142

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM68V1000B, 68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 DD23b66

    VDR 14D

    Abstract: zd107
    Text: Preliminary CMOS SRAM 68U1000BLI / Ll-L 128Kx8 Bit Low Voltage & Industrial Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C > Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165(iW (max.)L-Version


    OCR Scan     		PDF KM68U1000BLI 128Kx8 100ns 132mW KM68U1000BLGI/BLGI-L: 525mil) KM68U1000BLTI/BLTI-L KM68U1000BLRI/BLRI-L: 68U1DOOBLI/BLI-L 576-bit VDR 14D zd107

    68U1000

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM 68U1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast A ccess Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165nW (max.)L-Version


    OCR Scan     		PDF KM68U1000BLE 128Kx8 100ns 165nW 132mW KM68U1000BLGE/BLGE-L: 525mil) KM68U1000BLTE/BLTE-L KM68U1000BLRE/BLRE-L: 10OOBLE/BLE-L 68U1000