6AM1 Search Results

6AM1 Result Highlights (5)

Part	Manufacturer	Description
BCR6AM-12LA#B00	Renesas Electronics Corporation	Triacs, TO-220, /Bag
UPD70F3376AM1GCA-UEU-AX	Renesas Electronics Corporation	32-bit Microcontrollers (Non Promotion)
UPD70F3556AM1GMA2-GBK-AX	Renesas Electronics Corporation	32-bit Microcontrollers, , /
UPD70F3556AM1GMA-GBK-AX	Renesas Electronics Corporation	32-bit Microcontrollers, , /
UPD70F3556AM1GMA1-GBK-AX	Renesas Electronics Corporation	32-bit Microcontrollers, , /

6AM1 Price and Stock

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Diodes Incorporated DGD0506AM10-13 Gate Drivers HV Gate Driver MSOP-10 T&R 2.5K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DGD0506AM10-13		10,251			1 $0.8 10 $0.414 100 $0.278 1000 $0.224 10000 $0.165	Buy Now
Delta Electronics Inc AS16AM10N-A Controller Accessories IO Module - 16 Digital Inputs
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AS16AM10N-A		3			1 $156.17 10 $153.37 100 $134.3 1000 $134.3 10000 $134.3	Buy Now
Amphenol Corporation 786A-M12 Acceleration Sensor Modules Top exit, general purpose, M12 connector, case isolated, 1/4-28 to M6 stud, 100 mV/g, +/-5% sensitivity tolerance
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	786A-M12		1			1 $322.65 10 $322.65 100 $322.65 1000 $322.65 10000 $322.65	Buy Now
Vicor Corporation DCM3414V50M06A8M01 Isolated DC/DC Converters - Chassis Mount 180W 28Vin 5Vout 36A 3414 Chassis Mount
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DCM3414V50M06A8M01					1 $924.67 10 $734.49 100 $734.49 1000 $734.49 10000 $734.49	Get Quote
Cosel USA Inc AM12-OTFFEE-000001 AC/DC Power Modules 1200W configurable power supply
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AM12-OTFFEE-000001					1 $641.82 10 $641.82 100 $641.82 1000 $641.82 10000 $641.82	Get Quote

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6AM1 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
6AM11	Hitachi Semiconductor	FET Arrays	Original	PDF
6AM11	Hitachi Semiconductor	Silicon N-Channel/P-Channel Power MOS FET Array	Original	PDF
6AM11	Renesas Technology	Silicon N-Channel/P-Channel Power MOS FET Array	Original	PDF
6AM11	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
6AM11	Unknown	FET Data Book	Scan	PDF
6AM11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
6AM11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
6AM11-E	Renesas Technology	MOSFET: Silicon N-Channel/P-Channel Power MOSFET Array: SIP: 12-Pin	Original	PDF
6AM12	Hitachi Semiconductor	Mosfet Guide	Original	PDF
6AM12	Hitachi Semiconductor	FET Arrays	Original	PDF
6AM12	Hitachi Semiconductor	Silicon N Channel/P Channel Complementary Power MOS FET Array	Original	PDF
6AM12	Renesas Technology	Silicon N-Channel/P-Channel Complementary Power MOS FET Array	Original	PDF
6AM12	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
6AM12	Unknown	FET Data Book	Scan	PDF

6AM12	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
6AM12	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
6AM12-E	Renesas Technology	Silicon N-Channel/P-Channel Complementary Power MOS FET Array	Original	PDF
6AM13	Hitachi Semiconductor	Mosfet Guide	Original	PDF
6AM13	Hitachi Semiconductor	Silicon N-Channel/P-Channel Complementary Power MOS FET Array	Original	PDF
6AM13	Renesas Technology	Silicon N-Channel/P-Channel Complementary Power MOSFET Array	Original	PDF

6AM1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
gd79 Abstract: Hitachi 2SJ Hitachi DSA002751 Text: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A	Original	6AM13 2SK971 O-220AB) 2SK1094 O-220FM) 2SJ173 2SJ176 gd79 Hitachi 2SJ Hitachi DSA002751	PDF
Hitachi DSA00315 Abstract: 6AM14 Text: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline SP-12TA 5 S 12 S Pch 6 G 11 G D3 8 G D7 9 G 4G Nch	Original	6AM14 SP-12TA Hitachi DSA00315 6AM14	PDF
Hitachi 2SJ Abstract: Hitachi DSA002751 Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • Capable of 4 V gate drive	Original	6AM11 2SK970, 2SK1093 2SJ172, 2SJ175 SP-12 D-85622 Hitachi 2SJ Hitachi DSA002751	PDF
Hitachi DSA002786 Abstract: No abstract text available Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • • • • • • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A	Original	6AM12 Hitachi DSA002786	PDF
6AM11 Abstract: SP-12 Hitachi DSA00316 Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1215 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A	Original	6AM11 ADE-208-1215 SP-12 6AM11 SP-12 Hitachi DSA00316	PDF
6AM14 Abstract: Hitachi DSA00310 Text: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings Ta = 25°C Ratings	Original	6AM14 6AM14 Hitachi DSA00310	PDF
Hitachi DSA00300 Abstract: 6AM15 Text: 6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 Z 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	Original	6AM15 ADE-208-719 Hitachi DSA00300 6AM15	PDF
Hitachi DSA002724 Abstract: No abstract text available Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive	Original	6AM11 SP-12 Hitachi DSA002724	PDF
Untitled Abstract: No abstract text available Text: ECMF06-6AM16 Common mode filter with ESD protection for MIPI D-PHY and MDDI interface Datasheet − production data Description 1 The ECMF06-6AM16 is a highly integrated common mode filter designed to suppress EMI/RFI common mode noise on high speed differential serial buses like MIPI D-PHY or MDDI.	Original	ECMF06-6AM16 ECMF06-6AM16 DocID022284	PDF
6AM12 Abstract: H-Bridge Hitachi DSA00316 Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1216 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A	Original	6AM12 ADE-208-1216 SP-12TA 6AM12 H-Bridge Hitachi DSA00316	PDF
6am12 Abstract: 2SJ172 2SJ175 2SK1093 2SK970 d3125 Text: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A	Original	6AM12 SP-12TA 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 6am12 2SJ172 2SJ175 2SK1093 2SK970 d3125	PDF
6AM13 Abstract: Hitachi DSA00316 Text: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A	Original	6AM13 ADE-208-1217 SP-12TA 6AM13 Hitachi DSA00316	PDF
Hitachi DSA002786 Abstract: No abstract text available Text: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • • • • • • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A	Original	6AM13 Hitachi DSA002786	PDF
Hitachi 2SJ Abstract: Hitachi DSA002751 Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A	Original	6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751	PDF

Hitachi DSA002723 Abstract: No abstract text available Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive	Original	6AM12 SP-12TA Hitachi DSA002723	PDF
2SJ172 Abstract: 2SJ175 2SK1093 2SK970 6AM11 Hitachi 2SJ Hitachi DSA00305 Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive	Original	6AM11 2SK970, 2SK1093 2SJ172, 2SJ175 2SJ172 2SJ175 2SK1093 2SK970 6AM11 Hitachi 2SJ Hitachi DSA00305	PDF
6AM13 Abstract: 2SJ173 2SJ176 2SK1094 2SK971 6AM1 Text: 6AM13 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V ID = 5 A P-channel: RDS (on) ≤ 0.12 Ω, VGS = –10 V ID = –5 A	Original	6AM13 SP-12TA 2SK971 O-220AB) 2SK1094 O-220FM) 2SJ173 2SJ176 6AM13 2SJ173 2SJ176 2SK1094 2SK971 6AM1	PDF
Untitled Abstract: No abstract text available Text: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings Ta = 25°C	OCR Scan	6AM14	PDF
2SJ172 Abstract: 2SJ175 2SK1093 2SK970 6AM11 AM11 SP-12 Text: HITACHI 6AM11 S IL IC O N N-CHANNEL/P-CHANM EL P O W E R M O S F E T A R R A Y HIGH SPEED POW ER SWITCHING • FEA TU RES A.OtO. 2 • Low Qn-Resistance N-channel: Ros on ^ 0.17 Q , VG3 = 10 V, lD= 2.5 A P-channef: RDS (on) ^ 0.2 Q , VQS = -10 V, iD= -2.5 A	OCR Scan	6AM11 2SK970 2SK1093 2SJ172 2SJ175 2SJ175 6AM11 AM11 SP-12	PDF
lf7a Abstract: No abstract text available Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive	OCR Scan	6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 lf7a	PDF
Untitled Abstract: No abstract text available Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A	OCR Scan	6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM)	PDF
RE025 Abstract: lf7a Text: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • • • • L ow on-resistance Low drive current High speed switching High density mounting Outline 641 6AM14 Absolute Maximum Ratings Ta = 25°C	OCR Scan	6AM14 RE025 lf7a	PDF
Untitled Abstract: No abstract text available Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS lin < 0.17 £2, Vos = 10 V, ID = 2.5 A P-channel: R DS(on) :£ 0.2 12, VGS = -1 0 V, ID = -2 .5 A • Capable of 4 V gate drive	OCR Scan	6AM11 2SK970, 2SK1093 2SJ172, 2SJ175 SP-12	PDF
Untitled Abstract: No abstract text available Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance N-channel: R DS o1i < 0.17 ¿1, V GS = 10 V, ID= 2.5 A P-channel: R DS(o1i) < 0.2 ¿1, V GS = -1 0 V, ID= -2 .5 A	OCR Scan	6AM11 2SK970, 2SK1093 2SJ172, 2SJ175	PDF

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6AM1 Search Results

6AM1 Result Highlights (5)

6AM1 Price and Stock

Diodes Incorporated DGD0506AM10-13

Delta Electronics Inc AS16AM10N-A

Amphenol Corporation 786A-M12

Vicor Corporation DCM3414V50M06A8M01

Cosel USA Inc AM12-OTFFEE-000001

6AM1 Datasheets (36)

6AM1 Datasheets Context Search

gd79

Hitachi DSA00315

Hitachi 2SJ

Hitachi DSA002786

6AM11

6AM14

Hitachi DSA00300

Hitachi DSA002724

Untitled

6AM12

6am12

6AM13

Hitachi DSA002786

Hitachi 2SJ

Hitachi DSA002723

2SJ172

6AM13

Untitled

2SJ172

lf7a

Untitled

RE025

Untitled

Untitled