2N43a
Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,
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MIL-PRF-19500/6C
MIL-S-19500/6B
2N43AZ1,
2N43AZ2,
2N44AZ1
2N44AZ2
MIL-PRF-19500.
2N43a
2N43A DATASHEET
2N44A
2N43A equivalent
2n44a jan
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transistor f613
Abstract: transistor bc 567
Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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AO4604
AO4604
AO4604L
-AO4604L
16789ABA2CDE9AFDC
transistor f613
transistor bc 567
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ZX6T9M522
Abstract: SOT23 MARK PD sot236 651 DUAL NPN SOT23-6
Text: Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO IC PD hFE V A W Min VCE sat Max mV at IC at IC A RCE(sat) at IB mA Part Mark m ZX6TDNE6 2x NPN 9 4.5 1.1 500 0.2 45 1 100 22 6NN ZX6TD9E6 2x PNP -9 -4.5 1.1 500 -0.01 -45 -1
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OT23-6
ZXT849
ZXT690B
ZXT1053A
ZXT790A
ZXT951
ZXT953
ZX6T9M522
SOT23 MARK PD
sot236 651
DUAL NPN SOT23-6
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Untitled
Abstract: No abstract text available
Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2113,
MMUN2113L,
MUN5113,
DTA144EE,
DTA144EM3,
NSBA144EF3
DTA144E/D
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Untitled
Abstract: No abstract text available
Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2113,
MMUN2113L,
MUN5113,
DTA144EE,
DTA144EM3,
NSBA144EF3
DTA144E/D
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Untitled
Abstract: No abstract text available
Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2113,
MMUN2113L,
MUN5113,
DTA144EE,
DTA144EM3,
NSBA144EF3
DTA144E/D
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PDF
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SOt323 marking code 6X
Abstract: MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G
Text: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5111T1
SC-70/SOT-323
MUN5111T1/D
SOt323 marking code 6X
MUN5111T1G
MUN5112T1
MUN5112T1G
MUN5113T1
MUN5113T1G
MUN5113T3
MUN5113T3G
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marking 6C
Abstract: SMUN
Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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Original
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MUN2113,
MMUN2113L,
MUN5113,
DTA144EE,
DTA144EM3,
NSBA144EF3
DTA144E/D
marking 6C
SMUN
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Transistor hFE CLASSIFICATION Marking CE
Abstract: BC807 BC817 BC817-16 BC817-25 BC817-40
Text: SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D 3 H G A 2 1 MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage
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BC817
Transistor hFE CLASSIFICATION Marking CE
BC807
BC817
BC817-16
BC817-25
BC817-40
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MUN5111T1
Abstract: MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G SOt323 marking code 6X
Text: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias
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MUN5111T1
SC-70/SOT-323
MUN5111T1/D
MUN5111T1G
MUN5112T1
MUN5112T1G
MUN5113T1
MUN5113T1G
MUN5113T3
MUN5113T3G
SOt323 marking code 6X
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BC817
Abstract: BC807 BC817-16 BC817-25 BC817-40 marking 6c sot-23
Text: Pb BC817-16 BC817-25 BC817-40 RoHS COMPLIANCE 0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available BC807
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BC817-16
BC817-25
BC817-40
OT-23
BC807)
AEC-Q101
OT-23,
J-STD-020C
MIIL-STD-202,
BC817-16,
BC817
BC807
BC817-16
BC817-25
BC817-40
marking 6c sot-23
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BC817
Abstract: BC807 BC817-16 BC817-25 BC817-40
Text: Pb BC817-16 BC817-25 BC817-40 RoHS COMPLIANCE 0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available BC807
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BC817-16
BC817-25
BC817-40
OT-23
BC807)
AEC-Q101
OT-23,
J-STD-020C
MIIL-STD-202,
BC817-16,
BC817
BC807
BC817-16
BC817-25
BC817-40
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EP5S
Abstract: No abstract text available
Text: User's Manual User's Manual: Hardware M16C/6C Group 16 User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics
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M16C/6C
M16C/60
R01UH0138EJ0210
EP5S
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"application notes" ULN2803a
Abstract: No abstract text available
Text: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049B − FEBRUARY1997 − REVISED OCTOBER 2003 D 500-mA Rated Collector Current Single D D D D D DW PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of
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ULN2803A
SLRS049B
FEBRUARY1997
500-mA
ULN2800A
"application notes" ULN2803a
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2N6439
Abstract: UT25 coaxial VK200 ferrite choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
Collector-B400
2N6439
UT25 coaxial
VK200 ferrite choke
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BC807
Abstract: BC817 BC817-16 BC817-25 BC817-40
Text: SEMICONDUCTOR TECHNICAL DATA BC817 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BC807. DIM A B C D E G H J K L M N P MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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BC817
BC807.
BC807
BC817
BC817-16
BC817-25
BC817-40
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transistor z5
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics
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MRF653
MRF653
transistor z5
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BUT23
Abstract: No abstract text available
Text: { Z I SG STUO M SO N S^5 i IL [ieîi® iD © i BUT232V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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BUT232V
GC31990
GC14M
BUT23
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KTC4021
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC4021 EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. COMMON BASE TV TUNER, UHF CONVERTER APPLICATION.(COMMON BASE) FEATURES • High Transition Frequency : fT=1500MHz (Typ.). • Excellent I lfe Linearity.
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KTC4021
1500MHz
100MHz
KTC4021
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BUZ73
Abstract: K 3911 transistor "" transistor T0220AB
Text: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ73
T0220AB;
D0144b3
BUZ73
T-39-11
K 3911
transistor ""
transistor
T0220AB
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transistor d2624
Abstract: transistor D 2624 mos transistor d2624 s036a DDT relay LN2004A IC ULN2003A application
Text: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS S L D S 0 3 6 A - D2624, DECEMBER 1976 - REVISED APR IL 1993 H IG H -V O LT A G E H IG H -C U R R E N T D A R L IN G T O N T R A N S IS T O R A R R A Y S 500-mA Rated Collector Current Single Output d o r n package
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ULN2001ATHRU
ULN2004A
D2624,
500-mA
ULN2001A
ULN2001
ULN2002A,
ULN2003A,
transistor d2624
transistor D 2624
mos transistor d2624
s036a
DDT relay
LN2004A IC
ULN2003A application
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78M0
Abstract: stmicroelectronics diode sj transistor 6619 A982 l74m05 l78m
Text: L78M00 SERIES POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive
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L78M00
ISOWATT220,
OT-82,
OT-194
78M0
stmicroelectronics diode sj
transistor 6619
A982
l74m05
l78m
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2SA1898
Abstract: MARKING AN
Text: Ordering number:EN 5049 _ 2SA1898 No.5049 PNP Epitaxial Planar Silicon Transistor DC/DC Converter A p p licatio n s • High-speed switching. F e a tu re s • Adoption of FBET and MBIT processes. • Large current capacity. •Low collector-to-emitter saturation voltage.
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2SA1898
250mm2
2SA1898
MARKING AN
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Untitled
Abstract: No abstract text available
Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran
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001420b
BLY93A
r3774
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