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    6R12 Search Results

    6R12 Result Highlights (1)

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    G40MV36R12BEU Amphenol Communications Solutions MINI SAS Vertical SMT right key shell DIP cage length 3.4mm tape and reel package Visit Amphenol Communications Solutions
    SF Impression Pixel

    6R12 Price and Stock

    API Delevan EMI1206R-120

    FERRITE BEAD 120 OHM 1206 1LN
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    DigiKey EMI1206R-120 Digi-Reel 3,975 1
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    EMI1206R-120 Cut Tape 3,975 1
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    EMI1206R-120 Reel 3,000 3,000
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    Tri-Mag Inc L6R12-059

    AC/DC WALL MNT ADAPTER 5.9V 12W
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    DigiKey L6R12-059 Box 888 1
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    Phihong USA PMA36R-120PHW

    AC/DC WALL MOUNT ADAPTER 12V 36W
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    DigiKey PMA36R-120PHW Box 163 1
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    Neutron USA PMA36R-120PHW 50
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    Kyocera AVX Components TPSB685K016R1200

    CAP TANT 6.8UF 10% 16V 1411
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    DigiKey TPSB685K016R1200 Cut Tape 144 1
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    TME TPSB685K016R1200 2,000
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    Avnet Abacus TPSB685K016R1200 Reel 14 Weeks 2,000
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    Tri-Mag Inc L6R120D-120

    AC/DC DESKTOP ADAPTER 12V 108W
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    DigiKey L6R120D-120 Box 117 1
    • 1 $78.45
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    6R12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125

    9R120C

    Abstract: 9r120 TF5S03ZZ MIL-PRF-27F 6R91CT 3R26 3R18 9r30-c 1-5R75 6R120CT
    Text: R 400 Hz MIL-PRF-27F Toroid Transformers • Military designation TF5S03ZZ • Compact toroidal construction in a convenient printed-circuit mount package. • Power levels 1. 5, 3, 6, and 9 VA • Standard output voltages 5 to 300 volts • Low outgassing molded


    Original     		PDF MIL-PRF-27F TF5S03ZZ 115VAC, 115VRMS 910VRMS VRMS--200 5R62CT 3R62CT 6R62CT 9R62CT 9R120C 9r120 TF5S03ZZ 6R91CT 3R26 3R18 9r30-c 1-5R75 6R120CT

    6r125p

    Abstract: transistor 6R125P PG-TO-247-3-1
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P PG-TO-247-3-1

    6R125

    Abstract: 6R125C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6R125 6R125C6

    6r125c6

    Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 to247 pcb footprint JESD22

    6r125p

    Abstract: transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82

    6r125p

    Abstract: transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125

    6r125p

    Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125
    Text: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPA60R125CP PG-TO220 SP000095275 6R125P 6r125p transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125

    6r125p

    Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125

    6r125p

    Abstract: No abstract text available
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p

    6r125c6

    Abstract: 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPP60R125C6 IPW60R125C6 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPW60R125C6 JESD22

    IPB60R125CP

    Abstract: 6r125p
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R125CP PG-TO263 SP000088488 6R125P IPB60R125CP 6r125p

    6r125p

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R125P6,IPP60R125P6,IPA60R125P6 1Description


    Original     		PDF IPx60R125P6 IPW60R125P6, IPP60R125P6, IPA60R125P6 O-247 O-220 6r125p

    6r125p

    Abstract: transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R125CP PG-TO220-3-1 SP000088488 6R125P 6r125p transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP

    6r125p

    Abstract: 6R125
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R125CP PG-TO263 SP000088488 6R125P 6r125p 6R125

    6r125p

    Abstract: transistor 6R125P 6R125 IPI60R125CP JESD22 CA82
    Text: IPI60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R125CP PG-TO220 PG-TO262 6R125P 6r125p transistor 6R125P 6R125 IPI60R125CP JESD22 CA82

    6R125

    Abstract: 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R125CP PG-TO263 IPP60R125CP PG-TO220 SP000088488 6R125P 6R125 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R

    6r125p

    Abstract: transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode
    Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode

    DF 331 TRANSISTOR

    Abstract: 6r125p 6R125 transistor df 331 transistor 6R125P
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R125CP PG-TO220-3-31 SP000095275 6R125P DF 331 TRANSISTOR 6r125p 6R125 transistor df 331 transistor 6R125P

    6r125p

    Abstract: 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82
    Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 009-134-A O-247 6r125p 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82

    63hl

    Abstract: 6R12
    Text: Catalog Search for type 066 Page 1 of 8 Cornell Dubilier Electronics, Inc Axial, 85°C and 105°C, Standard, Type 066 D ftft - Standard, OCiivX - Ma\ ill', O M R - I ligh Ripple Ideal for general purpose use where long life at rated temperature and operating voltage


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    VOGT p8

    Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
    Text: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: . . ! [P W P y tg T r a iV D H in tJ . 80C186EC-16, -13 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation B True CMOS Inputs and Outputs ■ - 40°C to + 85°C Operating Temperature Range Integrated Feature Set: — Low-Power, Static, Enhanced 8086


    OCR Scan     		PDF 80C186EC-16, 16-BIT 32-Bit 16-Bit