Untitled
Abstract: No abstract text available
Text: Technical Data Sheet BTS Master High Performance Handheld Base Station Analyzer MT8221B MT8222B 400 MHz to 4.0 GHz 150 kHz to 7.1 GHz 10 MHz to 7.1 GHz 400 MHz to 6.0 GHz 150 kHz to 7.1 GHz 10 MHz to 7.1 GHz Cable and Antenna Analyzer Spectrum Analyzer
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MT8221B
MT8222B
MT8221B,
MT8222B
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MGFC39V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V7177A
MGFC39V7177A
28dBm
10MHz
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Untitled
Abstract: No abstract text available
Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC42V7177
MGFC42V7177
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
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FMM5057VF
Abstract: JESD22-A114-C 7.1 amplifier circuit diagram FMM5057 7.1 power amplifier circuit diagram Fmm50
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: Pout = 34.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Low VSWR ・Broad Band: 7.1 ～ 8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package (VF)
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FMM5057VF
FMM5057VF
JESD22-A114-C
7.1 amplifier circuit diagram
FMM5057
7.1 power amplifier circuit diagram
Fmm50
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
June/2004
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MGFC39V7177A
Abstract: 71F71
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V7177A
MGFC39V7177A
28dBm
10MHz
June/2004
71F71
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Untitled
Abstract: No abstract text available
Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC42V7177
MGFC42V7177
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
-45dBc
25dBm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC41V7177 7.1 – 7.7 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC41V7177
MGFC41V7177
-45dBc
30dBm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V7177
MGFC40V7177
50ohm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
-45dBc
25dBm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V7177A
MGFC39V7177A
-45dBc
28dBm
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AN rf power amplifier
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V7177A
MGFC39V7177A
-45dBc
28dBm
AN rf power amplifier
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V7177
MGFC40V7177
-45dBc
29dBm
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FMM5057VF
Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage
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FMM5057VF
FMM5057VF
FCSI0202M200
7.1 power amplifier circuit diagram
fujitsu power amplifier GHz
Fujitsu Quantum Devices
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MGFC41V7177
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+/-0.15 2 MIN The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7
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MGFC41V7177
MGFC41V7177
50ohm
Item-51]
30dBm
25deg
Oct-01
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Untitled
Abstract: No abstract text available
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage
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FMM5057VF
FMM5057VF
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dssc
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET> MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically
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MGFC36V7177A
MGFC36V7177A
45dBc
Item-01
10MHz
dssc
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MGFC36V7177A
Abstract: fet 30 f 124
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7177 A « 8fnel f 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 7.1~7.7GHz
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FC36V7177
MGFC36VT177A
45dBc
ltem-01
10MHz
MGFC36V7177A
fet 30 f 124
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7177A . 0 ^ „ o t > c • •• a;C W« 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~7.7GHz
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MGFC36V7177A
MGFC36V7177A
--51D
45dBc
Item-01
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package
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TIM7179-16
TIM7179-16
MW51020196
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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6FC39V
MGFC39V7177
Item-01:
Item-51:
27C102P,
RV-15
16-BIT)
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LDB 107
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-4 TECHNICAL DATA m FEATURES: • HIGH POWER PldB = 36.0 dBm at 7.1 GHz to 7.9 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6*5 dB at 7.1 GHz to 7.9 GHz ■ HERMETICALLY SEALED PACKAGE
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TIM7179-4
TIM7179-4--------------------POWER
T1IV17179-4
LDB 107
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