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    MGFC36V7177A

    Abstract: fet 30 f 124
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7177 A « 8fnel f 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The FC36V7177A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 7.1~7.7GHz


    OCR Scan     		PDF FC36V7177 MGFC36VT177A 45dBc ltem-01 10MHz MGFC36V7177A fet 30 f 124

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    dssc

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET> FC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically


    OCR Scan     		PDF MGFC36V7177A MGFC36V7177A 45dBc Item-01 10MHz dssc