U12JZ47L-TF3-T
Abstract: U12JZ47-TF3-T
Text: UNISONIC TECHNOLOGIES CO., U12JZ47/A TRIAC HIGH COMMUTATING TRIAC DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic pack for AC power control applications. FEATURES * Repetitive Peak off-State Voltage: VDRM = 400, 600V
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U12JZ47/A
U12JZ47/A
O-220F
U12JZ47L/U12JZ47AL
U12JZ47-TF3-T
U12JZ47L-TF3-T
U12JZ47A-TF3-T
U12JZ47AL-TF3-T
QW-R401-025
U12JZ47L-TF3-T
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COSMO 1010
Abstract: cosmo 1010 -817 IC cosmo 1010 cosmo 1010 datasheet Application of electronics circuits to lighting cosmo 1010 application cosmo 1010 -817-g16b KSD205AC3
Text: KSD205AC3 Solid State Relay Features Outside Dimension : Unit mm 1. Molded epoxy body. 2. Zero crossing circuit. 3. High input/output insulation. 4. Small size and light weight. 5. Can be installed directly on the PC board. 6. Fast reactive speed. 7. Normally open.
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KSD205AC3
70x70x2mm
50x50x2mm
COSMO 1010
cosmo 1010 -817
IC cosmo 1010
cosmo 1010 datasheet
Application of electronics circuits to lighting
cosmo 1010 application
cosmo 1010 -817-g16b
KSD205AC3
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U12JZ47A-4
Abstract: triac 65a 400
Text: UNISONIC TECHNOLOGIES CO., LTD U12JZ47/A TRIAC HIGH COMMUTATING TRIAC DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic pack for AC power control applications. FEATURES 1 * Repetitive Peak off-State Voltage: VDRM = 400, 600V
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U12JZ47/A
U12JZ47/A
O-220F
U12JZ47L-x-TF3-T
U12JZ47G-x-TF3-T
O-220F
U12JZ47AL-x-TF3-T
U12JZ47AG-x-TF3-T
QW-R401-025
U12JZ47A-4
triac 65a 400
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DBA30
Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Text: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A
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EN648D
DBA30
1088B
DBA30]
DBA30B
DBA30C
DBA30E
DBA30G
DBA30
DBA30E
DBA30G
silicon diode 3a
DIODE 3A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U12JZ47/A TRIAC HIGH COMMUTATING TRIAC DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic pack for AC power control applications. FEATURES 1 * Repetitive Peak off-State Voltage: VDRM = 400, 600V
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U12JZ47/A
U12JZ47/A
U12JZ47L-x-TF3-T
U12JZ47G-x-TF3-T
O-220F
U12JZ47AL-x-TF3-T
U12JZ47AG-x-TF3-T
QW-R401-025
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COSMO 1010
Abstract: cosmo 1010 -817 IC cosmo 1010 cosmo 1010 datasheet Application of electronics circuits to lighting KSD210AC3 dv/dt diode protection
Text: KSD210AC3 Solid State Relay Features Outside Dimension : Unit mm 1. Molded epoxy body. 2. Zero crossing circuit. 3. High input/output insulation. 4. Small size and light weight. 5. Can be installed directly on the PC board. 6. Fast reactive speed. 7. Normally open.
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KSD210AC3
100x100x2mm
70x70x2mm
COSMO 1010
cosmo 1010 -817
IC cosmo 1010
cosmo 1010 datasheet
Application of electronics circuits to lighting
KSD210AC3
dv/dt diode protection
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BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2SB993
2SD1363
200X200X2mmA£
150Xl50X2mm
100X100X2mm
70x70x2mma£
35X35XlmmA^
25X25XlmmA^
BBC OS 0,9 4A
07380
bbc os 0.9 4A
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2SD553
Abstract: Toshiba 2sd553
Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.
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2SD553
2SB553.
2-10A1A
O-220AB
2SD553
Toshiba 2sd553
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2SB553
Abstract: No abstract text available
Text: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A
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2SB553
2SD553.
2SB553
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2SB992
Abstract: A76A 2SD 307 2SD1362
Text: Tb TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DE clGci72SG DDD737b Q 5öC O T T T ö " <D ISCRETE/OPTO D ^.^379 SILICON PNP TRIPLE DIFFUSED TYPE {PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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clGci72SG
DDD737b
2SD1362
300X300X2mmAÂ
200X200X2mm
150X150X2nun
100xlOOX2mmA^
70X70X2mmA^
35X25X2mmAÂ
2SB992
A76A
2SD 307
2SD1362
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