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    free transistor bs 200

    Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
    Text: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF 711008b BF991 OT143 OT103 free transistor bs 200 marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991

    thy 266

    Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
    Text: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in


    OCR Scan     		PDF BTR59 OT-93 thy 266 m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 Gate Turn-Off Thyristors

    mosfet marking code gg

    Abstract: marking g1s marking code g1s
    Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television


    OCR Scan     		PDF 711002b BF997 OT143 mosfet marking code gg marking g1s marking code g1s