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    74698 Search Results

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    74698 Price and Stock

    Phoenix Contact 1746981

    TERM BLOCK HDR 12POS VERT 5.08MM
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    Phoenix Contact 2746980

    IC INTERFACE SPECIALIZED 64TQFP
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    Weidmüller Interface GmbH & Co. KG 2746980000

    FMH1 S1/12V F1 B RL
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    Harwin M80-4174698

    CONN RCPT HSG 46POS 2.00MM
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    JRH Electronics 72-494746-98S

    MIL-DTL-26482 PT Series Recept C
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    DigiKey 72-494746-98S 1
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    74698 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    74698 Unknown 74 Series IC Manual - TTL, HCMOS, Advanced CMOS, Bi-CMOS Scan PDF

    74698 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    29F002

    Abstract: A1317 AS29F002B-120SC
    Text: High Performance 256Kx8 5V CMOS Flash EEPROM AS29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)


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    AS29F002 29F002 A1317 AS29F002B-120SC PDF

    TAA 621

    Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
    Text: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption


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    AS7C1026 AS7C31026 44-pin 85titute TAA 621 MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies PDF

    1702 eprom programmer

    Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
    Text: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current


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    AS29F040 32-pin 1702 eprom programmer TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702 PDF

    7C34098-20

    Abstract: AS7C34098 AS7C4098
    Text: High Performance 256Kx16 CMOS SRAM AS7C4098 AS7C34098 256K×16 CMOS SRAM Preliminary information Features • Organization: 262,144 words × 16 bits • High speed - 15/20/25/35 ns address access time - 8/10/12/15 ns output enable access time • Low power consumption


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    AS7C4098 AS7C34098 44-pin 7C34098-20 AS7C34098 AS7C4098 PDF

    AS7C3512-15PC

    Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
    Text: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time


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    AS7C3512 AS7C3512L 32-pin AS7C3512-15PC AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465 PDF

    AA 12025

    Abstract: Z0 607 MN 64K32 J-Squared Technologies
    Text: High Performance 64Kx32 CMOS SRAM AS7C36432 64K×32 Synchronous burst SRAM Preliminary information Features • Organization: 65,536 words × 32 bits • Fully synchronous pipelined operation • Flow-through option • Fast clocking speed: 100/75/66 MHz


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    AS7C36432 AA 12025 Z0 607 MN 64K32 J-Squared Technologies PDF

    MD 202

    Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
    Text: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption


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    AS7C1025 AS7C31025 32-pin AS7C31025) MD 202 MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025 PDF

    29f400

    Abstract: flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90
    Text: High Performance 512Kx8/256K×16 5V CMOS Flash EEPROM AS29F400 512K×8/256K×16 CMOS Flash EEPROM Preliminary information Features • Organization: 512K×8 or 256K×16 • Sector architecture • Low power consumption - 35 mA maximum read current - 60 mA maximum program current


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    8/256K AS29F400 48-pin 44-pititute 29f400 flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90 PDF

    houston tech

    Abstract: pelco Taiwan Oasis Enterprise Co., LTD 221212 datasheet and application 7217 eprom UV eraser NEXUS FLASH ERASE oasis taiwan oasis SST superflash
    Text: SST’s MTP Products A Superior Alternative to EPROM and Low Functionality Flash Application Note 1.0 Introduction MTP is a Many-Time Programmable low cost flash memory. The MTP combines the electrical erasability of flash and the cost effectiveness of EPROM. SST designed the MTP products, a low cost NVM, by reducing


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    PDF

    QFP 87c51

    Abstract: intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 SST89C54 SST89C58
    Text: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Preliminary Specifications FEATURES: • Multi-Purpose 8-bit 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility • Three 16-bit Timer/Counter • Programmable Serial Port UART


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    FlashFlex51 SST89C54 SST89C58 SST89C59 16-bit 128-byte 64-byte QFP 87c51 intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 PDF

    7 segment display 5611

    Abstract: 29F010 single 7 segment display 5611 9224 AS29F011 HV Component Associates taa 723 uA 723 h AS29F010 29F010-70
    Text: High Performance 128Kx8 CMOS Flash EEPROM AS29F010 AS29F011 5V 128K×8 CMOS Flash Memory FEATURES • Organization:131,072 words × 8 bits • JEDEC standard write cycle commands • Sector Erase architecture – protects data from accidental changes – Four 32K × 8 sectors


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    AS29F010 AS29F011 32-pin 7 segment display 5611 29F010 single 7 segment display 5611 9224 AS29F011 HV Component Associates taa 723 uA 723 h AS29F010 29F010-70 PDF

    AS7C1028-25PC

    Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
    Text: High Performance 256Kx4 CMOS SRAM AS7C1028 AS7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle


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    AS7C1028 AS7C1028L 28-pin AS7C1028-25PC AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028 PDF

    AS7C33232-15QC

    Abstract: datasheet CI 556 ats 2300 intel 8282 AS7C33232-15TQC nt 407 f AS7C33232 MO-108 NT 407 F transistor
    Text: High Performance 32Kx32 CMOS SRAM AS7C33232 AS7C33232F 32K×32 Synchronous burst SRAM Features • Organization: 32,768 words × 32 bits • Fully synchronous pipelined operation • Flow-through option F version • Fast clocking speed: 100/75/66/60 MHz


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    AS7C33232 AS7C33232F AS7C33232-15QC datasheet CI 556 ats 2300 intel 8282 AS7C33232-15TQC nt 407 f AS7C33232 MO-108 NT 407 F transistor PDF

    datasheet 29f200

    Abstract: 8282 ADDRESS LATCH HV Component Associates 29f200-90 AS29F200T
    Text: High Performance 256Kx8/128×16 5V CMOS Flash EEPROM AS29F200 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 or 128K×16 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors


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    AS29F200 datasheet 29f200 8282 ADDRESS LATCH HV Component Associates 29f200-90 AS29F200T PDF

    transistor sb 772

    Abstract: 9726 28-pin SOJ SRAM 8282 ADDRESS LATCH datasheet CI 9762 AS7C164 AS7C164-10PC AS7C164-12PC AS7C164-8JC AS7C164-20PC
    Text: High Performance 8Kx8 CMOS SRAM AS7C164 AS7C164L 8K×8 CMOS SRAM Common I/O Features • Organization: 8,192 words × 8 bits • High speed - 8/10/12/15/20 ns address access time - 3/3/3/4/5 ns output enable access time • Low power consumption - Active: 633 mW max (10 ns cycle)


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    AS7C164 AS7C164L 28-pin transistor sb 772 9726 28-pin SOJ SRAM 8282 ADDRESS LATCH datasheet CI 9762 AS7C164 AS7C164-10PC AS7C164-12PC AS7C164-8JC AS7C164-20PC PDF

    74257

    Abstract: 74698 74175 74697 004-AA SAX 34
    Text: - 74698 303 - BCD Synchronous Up/Down Counters 3STATI OUTPUTS VCC OUTPUT Qa LOAD Jl 1_ «co o* OUTPUT CONTROL H/C G ELECT .1- Q_-1 _1 Oa oc Oo IN « 0 UP< COUNTER » OOWK CLOCK « C D > 7 4 I 6 8 i / j i i 7 4 1 6 9 i l 7 ' * * ll M tw— l t CpSwTnF WfCIST CNO


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    74I68i/jii74169c 74257 74698 74175 74697 004-AA SAX 34 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors


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    128Kx8 AS29F010 AS29F011 128KxX 32-pin 0DDD337 PDF

    74168

    Abstract: 74169 74699 counter 74168 74257 MAX3039 74175 16-IF
    Text: 304 — Binary Synchronous Up/Dow n Counters 74699 3STATE OUTPUTS »CC w i r v i 1 <JA ug L - J- QC UD • lu * u buniNUL H IIC 1 OO ENA i lLOADl C A * DC n in in in in in in in in iriiif OAT* INPUTS ■74168 .$ ¡¿7 4 1 6 9 1 7 'I ' ENABLE M M T IR RECIST GNO


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    PDF

    AS7C256

    Abstract: 256x128x8 TI 344C
    Text: High Performance 32Kx8 CMOS SRAM II ^ L lh . AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time


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    32Kx8 AS7C256 AS7C256L 28-pin 7C512 7C1024 32-pin 40-pin 256x128x8 TI 344C PDF

    74169

    Abstract: 74257 74175 74697 74699 74698 AA11H u 74 hct 74 74696 jrc 11
    Text: —302 — 74 69 7 Binary S yn chron ou s U p/D ow n Counters ENABLE LOAD OUTPUT CONTROl G MIECT if g COUNTER A DOWN CLOCK t C O OATA INPUTS > 7 4 1 6 8 * /JI1 7 4 1 6 9 U INAILE g—BW lflft REOtST ftCOIST CND P CLEAR ER CLOCK 7 ' T £ l } \ \ £ 7 4 1 7 5 ,


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    74168i/JÃ 74169U 74169 74257 74175 74697 74699 74698 AA11H u 74 hct 74 74696 jrc 11 PDF

    us8k

    Abstract: d1272
    Text: AS7M64T3256A AS7M64T3512A AS7M64T3256B AS7M64T3512B B Cache Modules Async Async Burst Burst Low Voltage 256/512 KByte Cache Modules with Tag PRELIMINARY ASYNCHRONOUS VERSIONS FEATURES 64-bit 3.3V asynchronous data PIN D I A G R A M a s y n c • 5V tolerant I/O specification


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    64T3256A AS7M64T3256A AS7M64T3512A AS7M64T3256B AS7M64T3512B 64-bit T00344c us8k d1272 PDF

    SiS 301 chipset

    Abstract: opti chipset TAG 503 static ram 64kx8 malaysia microelectronic solution low power asynchronous SRAM 64KX8 3.3V tag 136 m2
    Text: AS7M64U3256A Asvnc AS7M64U3512A Async í c i v u -i i i h - í i AS7M64L!32?6B B urst AS7M64U3512B B urst I l High-Performance 256/M2 KByte 3 .3 \ ^ Cache M odules «• Low Voltage 256/512 KByte Cache M odules with Tag PRELIMINARY ASYNCHRONOUS VERSIONS


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    256/M2 AS7M64U3256A AS7M64U3512A AS7M64L AS7M64U3512B D03M4T SiS 301 chipset opti chipset TAG 503 static ram 64kx8 malaysia microelectronic solution low power asynchronous SRAM 64KX8 3.3V tag 136 m2 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs


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    32Kx9 AS7C259 AS7C259L 32Kx9 32-pin PDF

    J-Squared Technologies

    Abstract: No abstract text available
    Text: S a l e s re p r e s e n t a t i v e s S a k s re p r e s e n t a t i v e s DOMESTIC REPS ALABAMA Concord Component Reps, Inc. 190 Lime Quarry, Suite # 102 Madison, AL 3 5758 205 772-8383 ARKANSAS Southern Sutes Marketing, Inc. 1702 N Collins Blvd., Suite # 2 5 0


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    -103rd J-Squared Technologies PDF