MCP3043
Abstract: CZ0BD C1723 MCP3042 MCP3032 ta 8611 C1711 C2090 MCP3033 MGP303
Text: ÖUALITY TE CHNOLOGIES CORP flfl Î T | 74bbfl51 □ □ □ S ciS3 b 88D 02953 ^GENERAL INSTRUMENT AIGaAs ZERO-CROSSIN G TRIACS ZERO-CROSSING Æ i tS Æ “ 7 15° MAX 1 6.86 .270) 6.35 (.250) 7.62 (.300) REF 0.36 (.014) - , - J 0.20 (.008) 1 8.38 (.330)
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MCP3032
MCP3033
MCP3042
MCP3043
C2090
100mA
500mA
MCP304X
MCP3043
CZ0BD
C1723
ta 8611
C1711
C2090
MCP3033
MGP303
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1AV3A
Abstract: No abstract text available
Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting
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74bbfl51
H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
1AV3A
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SMD Transistor AFR
Abstract: No abstract text available
Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bbfl51
T-41-83
MCT277
MCT277
C2090
15pseconds
MCT9001
SMD Transistor AFR
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HLIK-1
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP 57E D 74bbfl51 000ME1E H ä TY O ptoisolator Specifications _ H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H11K series consists o f a gallium -alum inum -arsenide, in frared
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74bbfl51
000ME1E
H11K1,
H11K2
H11K1
H11K2
D0D421S
HLIK-1
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Untitled
Abstract: No abstract text available
Text: 3UALITY T E CH N OL O GI E S CORP S7E ]> 74bbfl51 □□□430b 55b I ÖTY European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in frared em itting d iode
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74bbfl51
CNY32
CNY32
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QEC121
Abstract: No abstract text available
Text: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder
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QEC121/122
QSC11X
ST2131
QEC122
74bbfl51
QEC121
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Untitled
Abstract: No abstract text available
Text: E süi CLEAR LENST-100 SOLID STATE LAMPS OPTOELECTRONICS YELLOW MV5362X TINTED, HLMP-1440, MV5360 PALE TINT HIGH EFFICIENCY GREEN MV5462X TINTED, HLMP-1540, MV5460 PALE TINT HIGH EFFICIENCY RED MV5762X TINTED, HLMP-1340, MV5760 PALE TINT PACKAGE DIMENSION!
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LENST-100
MV5362X
HLMP-1440,
MV5360
MV5462X
HLMP-1540,
MV5460
MV5762X
HLMP-1340,
MV5760
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Untitled
Abstract: No abstract text available
Text: PANEL INDICATORS DPTOELECïROmCS YELLOW M V 53173 HIGH EFFICIENCY GREEN M V 54173 HIGH EFFICIENCY RED M V 57173 DESCRIPTION The MV5X173 series is a large rectangular lamp which contains two LED chips with separate anodes and cathodes for each light. The illuminated area is
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MV5X173
500-inchesx0
250-inches
500-inchx
250-inch
C1702
C1194A
MV53173
MV54173
74bbfi51
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates
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H11N1
H11N2
H11N3
ST1603
ST2028
ST2029
ST2030
ST2032
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C 1114 transistor
Abstract: No abstract text available
Text: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
000b33b
C 1114 transistor
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Untitled
Abstract: No abstract text available
Text: RECTANGULAR SOLID STATE LAMPS OPTOELECTRONICS HIGH EFFICIENCY RED YELLOW HIGH EFFICIENCY GREEN HLMP-0300/1 HLMP'0400/1 HLMP-0503/4 DESCRIPTION * SO .018 0.45 + N O M IN AL-2 PLACES I .315 (6.00) .290 (7.37) .100(2.54) .090 (2.29) .100(2.54) NOMIN AL
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HLMP-0300/1
HLMP-0503/4
MV5X123
MV5X123,
C1063C
C1676
C1064C
at260Â
MIL-S-750,
74bbflSl
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Untitled
Abstract: No abstract text available
Text: LsSl 2.3 8x8 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW GMA2888C HER GMA2988C GREEN GMA2488C BICOLOR RED/GREEN -PACKAGE DIMENSIONS GMC2888C GMC2988C GMC2488C GMC 2688C DESCRIPTION I A. G MX2X88C r I«— 0.4 016
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GMA2888C
GMA2988C
GMA2488C
GMC2888C
GMC2988C
GMC2488C
2688C
MX2X88C
GMX2X88C
GMC2688C
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PDF
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB86ONI1/OPB860N51/OPB860N55 PACKAGE DIMENSIONS DESCRIPTION SEE NOTE 3 's 1 .125 3.18 _J O P T IC A L C E N TE R LIN E 9 - . 4 8 5 (12.32) The OPB86 ON series of switches is designed to allow the user maximum flexibility in applications. Each switch
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OPB86ONI1/OPB860N51/OPB860N55
OPB86
OPB86ON11
OPB860N51
PB860N55
74bbfl51
000b3bfl
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET
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H11F1
H11F2
H11F3
ST1603
74bbfl51
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PDF
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Untitled
Abstract: No abstract text available
Text: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the
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QRD1113/1114
QRD1113/1114
QRD1113/1114.
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Untitled
Abstract: No abstract text available
Text: 2.0'5x7 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW G M A 2 8 7 5 C HER G M A 2 9 7 5 C GREEN G M A 2 4 7 5 C BICOLOR RED/GREEN PACKAGE DIMENSIONS G M C 28 75 C G M C 2 9 75 C G M C 2475 C G M A 2 6 75 C DESCRIPTION A. GMX2X75C 3 8 .4 i0 .3 _ ' 1.5±.01> o
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GMX2X75C
GMC2X75C
GMA2X75C
GMA2675C
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PDF
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c1474
Abstract: No abstract text available
Text: AC LINE MONITOR LOGIC-OUT DEVICE OPTOELECTRONICS 1 MID400 PACKAGE DIM EN SIO N S DESCRIPTIO N The MID400 is an optically isolated AC line-to-logic interface device. It is packaged in an 8-lead plastic DIP The AC line voltage is monitored by two back-to-back
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MID400
MID400
C1478A
C1479B
74bbfiS1
74bhfiSl
C1474
c1474
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PDF
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Untitled
Abstract: No abstract text available
Text: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021
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L14P1/2
00mW/Â
at2870Â
74bbfl51
0D0b434
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Untitled
Abstract: No abstract text available
Text: [sul PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. — D— * 1' Red Ef 4 Color • — T - H 1 i f 11 b J 3 . k SECTION X-X LEAD PROFILE
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L14Q1
L14Q1
ST1335
100pps
ST1112-11
Q00bM3fl
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PDF
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smd 27E
Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
Text: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac
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MCP3030*
MCP3040/0Z*
15mAMCP3031
MCP3041/1Z
MCP3032
MCP3042/2Z
MCP3031
MCP303Z
smd 27E
MCP3041
smd TRANSISTOR 27e
c2075
transistor C2078
MCP3040
MOC3041 optocoupler
S7E SMD TRANSISTOR
transistor C2075
optocoupler moc3031
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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PDF
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314 optocoupler
Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Text: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with
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OF4114
OT90B
CNY17-3,
14CNP.
MSB051
OF4114
OT212.
74bbflSl
0DD4fl03
314 optocoupler
14CNP
SOT-90B
453 optocoupler
sot90b
optocoupler 312
317 optocoupler
transistor b73
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PDF
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GE SC160B triac
Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio
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H11AG1
H11AG2
H11AG3
H11AG
C2079
ST2125
D00b225
GE SC160B triac
SC160B
3kw triac
gemov
relay 12v 100A
C2079
H11AG3
ST2122
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PDF
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C1019
Abstract: C1018 C1022 Quality Technologies C1018 5V C1017 C1020 C1023 photo darlington sensor reflective photo sensor
Text: ÖUALITY TECHNOLOGIE S CORP S7E » • 74t.tflSl QG03bll S ■ I QUALITY TECHNOLOGIES REFLECTIVE OBJECT SENSOR MSA7 OLD PART NO.— MCA7 PACKAGE DIMENSIONS DESCRIPTION PIN 1 IDENTIFICATION The M SA7 optoisolator consists of an infrared emitting diode and a silicon planar photodarlington. The on-axis
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74btiflSl
0003bl5
T-V/-73
C1019
C1018
C1022
Quality Technologies
C1018 5V
C1017
C1020
C1023
photo darlington sensor
reflective photo sensor
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