k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagar
PA0016
STR11006
SO41P
PIONEER PA0016
7 segment to bcd converter 74c915
SAJ141
74HC145
tms1122
IC PA0016
KOR 2310 transistor
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Untitled
Abstract: No abstract text available
Text: Advance Information SN54LS289/74LS289 64-BIT RANDOM ACCESS MEMORY WITH OPEN COLLECTOR OUTPUTS DESCRIPTIO N — The 54LS/74LS289 is a high-speed, low-power 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading, and addresses are fully decoded on-chip. Outputs are open-collector type
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SN54LS289/SN74LS289
64-BIT
54LS/74LS289
16-word
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74LS289
Abstract: 74LS189 74LS89 93L422 7489 93411 L422 93L412 93L420 93L421
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS MEMORY 2 4 6 10 12 M3 93411, 93411A, 93L420, 93L421, 93421, 93421A M2 93410, 93410A M1 54LS/74LS89, 54LS/74LS189, S4LS/74LS289, 7489 3 CS 1— D in Ao WE 2 - A i 2— Ai 3 - A2 14 — Ä2 4 - Ä3 15 — Ä3 1 2 -
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54LS/74LS89,
54LS/74LS189,
S4LS/74LS289,
3411A,
93L420,
93L421,
3421A
93L412
93L422
74LS289
74LS189
74LS89
93L422
7489
93411
L422
93L420
93L421
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74LS289
Abstract: N74LS289F N74LS289N
Text: 54S/74S289 3101A 54LS/74LS289 (Preliminary data) LOGIC SYMBOL See Slgnetics Memory Data Manual for 3101A Specifications DESCRIPTION FEATURES T h e " 2 8 9 " is a 6 4 - B it h ig h - s p e e d R ead /W rite Random A c c e s s M em ory for use a s a "sc ra tc h pad" memory with non
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54S/74S289
74LS289
64-Bit
16-words
54S/74S
54LS/74LS
54S/74S
54LS/74LS
74LS289
N74LS289F
N74LS289N
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AM27LS03PC
Abstract: 74ls189 ram 27lS03 Am27LS02/27LS03
Text: Am27LS02/27LS03 64-Bit Low-Power Inverting-Output Bipolar RAM Output preconditioned during write to eliminate write recovery glitch Available with open-oollector outputs Am27LS02 or with three-state outputs (Am27LS03> Pin-com patible replacem ents fo r 74LS289, (use
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Am27LS02/27LS03
64-Bit
Am27LS02
Am27LS03
74LS289,
74LS189,
Am27LSQ2
AM27LS03PC
74ls189 ram
27lS03
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27LS02
Abstract: AM27LS03 AM27LS03-30/BEA
Text: ADV M I C R O {MEflORY} &*\ D e 05 5 7 5 2 0 00BS553 7 0257528 ADV MICRO (MEMORY 890 25553 D T-46-23-08 Am 27LS02/Am 27LS03 H 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky
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00BS553
T-46-23-08
27LS02/Am
27LS03
64-Bit
Am27LS02
Am27LS03
74LS289,
74LS189,
27LS02
AM27LS03-30/BEA
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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RG121JU
WIMA TFM
Beckman 785-1
mkb3
wima TFM-.1UF-160V
bf197
diode zener ph c9v1
2N4286
2N3642
bf197p
transistor 2N2359A
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Untitled
Abstract: No abstract text available
Text: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and
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54S/74S289
64-BIT
16word
54/74S
54/74LS
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27lS03
Abstract: 74ls189 ram 74LS189 74LS289
Text: A m 27LS 02/27L S 03 64-Bit Low-Power Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMs Low Power Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature • • • Output preconditioned during write to eliminate write
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Am27LS02/27LS03
64-Bit
Am27LS02
Am27LS03
74LS289,
74LS189,
27lS03
74ls189 ram
74LS189
74LS289
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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74LS289
Abstract: 74S289PC 54LS289DM 54S289DM 74LS289DC 74LS289FC 74LS289PC 74S289DC 74S289FC S289T
Text: 289 b 11 54S/74S289 54LS /74LS 289 <T' C O N N E C T IO N D IA G R A M P IN O U T A U <7 ao[T 64-BIT RANDOM ACCESS MEMORY Til vcc Tsl Ai csGE 771 A2 771 a 3 T2ID4 [7 [7 5, [I 02 [][ 52|T W ith O p e n -C o lle c to r O utputs we Oi D E S C R IP T IO N — T he ’289 is a h igh speed 6 4 -b it RAM o rg a n ize d as a 16w o rd by 4 -b it array. A d d re ss in p u ts are b u ffe re d to m in im ize lo a d in g , and
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54S/74S289
54LS/74LS289
64-BIT
16-word
54/74S
54/74LS
74LS289
74S289PC
54LS289DM
54S289DM
74LS289DC
74LS289FC
74LS289PC
74S289DC
74S289FC
S289T
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ttl 7489
Abstract: TTL 74ls89 memory 256x1 74LS289 256x1 7489 FAIRCHILD 74LS189 74LS89 93L422 93L412
Text: •U Ç>> N> Item Organization 16x4 cn cn cn r~ r- n a A fW 00 <0^ 5 A ] j I a O TÏ o I> 3 3D > a s w CO <ft w r* U) fO 00 <0^ £ I 16x4 CO fO 16x4 16x4 7489 16x4 9410 256x1 93410 256x1 93410A CO 00 -vj o> cn A 256x1 93411 256x1 93421 256x1 j 93L421 64x9 93419
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54LS/74LS89<
54LS/74LS189
54LS/74LS289
256x1
3410A
3411A
ttl 7489
TTL 74ls89
memory 256x1
74LS289
7489 FAIRCHILD
74LS189
74LS89
93L422
93L412
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AM27LS02
Abstract: 74ls189 ram
Text: Am27LS02/27LS03 64-Bit Low-Power Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMs Low Power Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature • • • Output preconditioned during write to eliminate write
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Am27LS02/27LS03
64-Bit
Am27LS02
Am27LS03
74LS289,
74LS189,
74ls189 ram
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