BUK9516-75B
Abstract: BUK9616-75B
Text: BUK95/9616-75B TrenchMOS logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK95/9616-75B
BUK9516-75B
O-220AB)
BUK9616-75B
OT404
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03ad10
Abstract: PSMN008-75B PSMN008-75P
Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PSMN008-75P;
PSMN008-75B
PSMN008-75P
PSMN008-75B
OT404
OT404,
03ad10
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PDF
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Untitled
Abstract: No abstract text available
Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PSMN008-75P;
PSMN008-75B
PSMN008-75P
PSMN008-75B
OT404
OT404,
MBK106
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PDF
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7606-75B
Abstract: diode 7446
Text: BUK75/7606-75B TrenchMOS standard level FET Rev. 02 — 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK75/7606-75B
BUK7506-75B
O-220AB)
BUK7606-75B
OT404
7606-75B
diode 7446
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BUK9506-75B
Abstract: No abstract text available
Text: BUK95/9606-75B TrenchMOS logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK95/9606-75B
BUK9506-75B
O-220AB)
BUK9606-75B
OT404
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PDF
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BUK7213-75B
Abstract: No abstract text available
Text: BUK7213-75B TrenchMOS standard level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7213-75B
M3D300
BUK7213-75B
OT428
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HZG469
Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Text: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.
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PSMN008-75P/75B
OT404,
HZG469
PSMN008-75B
PSMN008-75P
75b diode
75p diode
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Untitled
Abstract: No abstract text available
Text: BUK7Y54-75B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y54-75B
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Untitled
Abstract: No abstract text available
Text: BUK7Y28-75B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y28-75B
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BUK7214-75B
Abstract: No abstract text available
Text: BUK7214-75B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7214-75B
M3D300
OT428
BUK7214-75B
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03no42
Abstract: BUK9217-75B
Text: BUK9217-75B TrenchMOS logic level FET Rev. 01 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9217-75B
M3D300
OT428
03no42
BUK9217-75B
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BUK7513-75B
Abstract: BUK7613-75B
Text: BUK75/7613-75B TrenchMOS standard level FET Rev. 01 — 14 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/7613-75B
BUK7513-75B
O-220AB)
BUK7613-75B
OT404
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PDF
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BUK9Y30-75B
Abstract: No abstract text available
Text: BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 01 — 14 July 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9Y30-75B
M3D748
OT669
BUK9Y30-75B
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Untitled
Abstract: No abstract text available
Text: DP AK BUK7214-75B N-channel TrenchMOS standard level FET 18 July 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7214-75B
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75B2
Abstract: No abstract text available
Text: BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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BUK9Y30-75B
75B2
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Untitled
Abstract: No abstract text available
Text: BUK7Y18-75B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y18-75B
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PSMN005-75P
Abstract: 75p diode PSMN005-75B
Text: PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 TO-220AB
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PSMN005-75P/75B
PSMN005-75P
O-220AB)
PSMN005-75B
OT404
OT404,
75p diode
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PDF
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BUK9214-75B
Abstract: No abstract text available
Text: BUK9214-75B TrenchMOS logic level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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Original
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BUK9214-75B
M3D300
BUK9214-75B
OT428
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PDF
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y18-75B N-channel TrenchMOS standard level FET 1 March 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y18-75B
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BUK9506-75B
Abstract: No abstract text available
Text: BUK95/9606-75B TrenchMOS logic level FET Rev. 01 — 5 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK95/9606-75B
BUK9506-75B
O-220AB)
BUK9606-75B
OT404
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK75/7606-75B TrenchMOS standard level FET Rev. 01 — 5 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK75/7606-75B
BUK7506-75B
O-220AB)
BUK7606-75B
OT404
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PDF
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BUK7214-75B
Abstract: No abstract text available
Text: DP AK BUK7214-75B N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7214-75B
BUK7214-75B
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diode 2JC
Abstract: 4S125
Text: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching
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OCR Scan
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DD13t
PM4550N---------------HITACHI/
diode 2JC
4S125
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2n491a
Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
Text: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A
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OCR Scan
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MH/-S-19500/75B
2N489A
2N494A.
TX2N489A
TX2N494A.
2N2417A
2N2422A,
TX2N2417A
TX2N2422A
2n491a
Helipot
2N469A
2N490A
MXL-STD-750
2N2418A
2N2422A
2N494A
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