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Fuji Electric Co Ltd 7MBP75TEA-120-50 Igbt Module, 1.2Kv, 75A, 368W; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:3.1V; Power Dissipation:368W; Operating Temperature Max:150°C; Igbt Termination:Solder Pin; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Fuji Electric 7MBP75TEA-120-50
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7MBP75TEA120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
7MBP75TEA120		Fuji Electric	Econo IPM series		Original	PDF

7MBP75TEA120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
igbt driver A 4504 Abstract: 7MBP75TEA120 IPM DC AC2500 IPM 1200V/75A AC200V circuit diagram for sine wave inverter on IC 7MBP75TEA U/25/20/TN26/15/850/VCC15V Text: 7MBP75TEA120 1200V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection	Original	PDF	7MBP75TEA120 igbt driver A 4504 7MBP75TEA120 IPM DC AC2500 IPM 1200V/75A AC200V circuit diagram for sine wave inverter on IC 7MBP75TEA U/25/20/TN26/15/850/VCC15V
6mbp20rta060 Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120 Text: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4	Original	PDF	REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
2MBI450U4E-120 Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！	Original	PDF	max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120