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    Abstract: No abstract text available
    Text: 7R5R537 OQaqOTI M: • / T m 3 1 - 0 7 _ SCS-THOMSON g^ gm[iCT«(gS_ S G MJE200 MJE210 S-THOMSON 30E ] COMPLEMENTARY POWER TRANSISTORS DESC RIPTIO N The MJE200 (NPN type) and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec


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    PDF 7R5R537 MJE200 MJE210 O-126 MJE200-MJE210

    TRIAC BTa 18 600 B

    Abstract: bta 40 -700a
    Text: 3QE D £ ÿ j S G • S - 7R2R237 0031572 R ■ T H O M S O 'T-2.5-17 N □ [Ig m iC T iiM flO S BTA 40 A S G S-TH0MS0N TRIACS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP FAST-ON CO NNEXIONS Igt SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE 2500 V rms UL RECOGNIZED E81734


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    PDF 7R2R237 E81734) iBR237 TRIAC BTa 18 600 B bta 40 -700a