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    XCM-A102

    Abstract: XCMA102 BCF70 transistor marking 68t
    Text: • bbS3T31 □02i*SGtì EIE « A P X N AMER PHILIPS/DISCRETE BCF70 t?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icro m in ia tu re plastic envelope, intended fo r lo w level, lo w noise ap p lica tio ns in th ic k and th in -film circuits.


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    PDF bbS3T31 BCF70 BCF70 7Z68043 XCM-A102 XCMA102 transistor marking 68t

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    d0245

    Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
    Text: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.


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    PDF bb53S31 DQ545bl BCW29 BCW30 200juA OT-23. bbS3131 BCW30 7Z68043 d0245 BCW29 IEC134 332 z marking, sot-23

    BCW30

    Abstract: BCW29 ic marking ETH ScansUX40 IEC134
    Text: 7il0fl2b OObûSE? ETH • P H I N BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icrom iniature plastic envelope, intended fo r tow level general purpose appli­ cations in th ick and thin-film circuits. Q U IC K R E F E R E N C E D A T A


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    PDF 711002b BCW29 BCW30 BCW30 200MA 00bfl53S ic marking ETH ScansUX40 IEC134