RF POWER TRANSISTOR NPN vhf
Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
Text: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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OT122F
PINNING-SOT122F
RF POWER TRANSISTOR NPN vhf
BLY92C
ceramic capacitor 47 pf
Z609
philips ferroxcube
transistor 4312
philips Trimmer 60 pf
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BLY92C
Abstract: mfc capacitor philips
Text: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran
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711iOÃ
BLY92C
OT-120.
7Z68949
BLY92C
mfc capacitor philips
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BLV21
Abstract: RF POWER TRANSISTOR NPN vhf
Text: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran
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BLV21
OT-123.
D26li4fl
7Z68950
7Z689S1
7Z68949
BLV21
RF POWER TRANSISTOR NPN vhf
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D2C17
Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran
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OCR Scan
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BLY92C
OT-120.
7Z68949
D2C17
BLY92C
BLY92
BLY92 transistor
sot120
8-32UNC
RF POWER TRANSISTOR NPN vhf
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