PN3567
Abstract: No abstract text available
Text: PN3567 NPN SILICON TRANSISTOR DESCRIPTION PN3567 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications. TO-92 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80 V Collector-Emitter Voltage V ceo 60 V Emitter-Base Voltage
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PN3567
500mA
600mW
100jiA
120AX
150mA
300nS,
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Untitled
Abstract: No abstract text available
Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V 80 V
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BD439/441
BD440,
BD442
BD439
BD441
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BD439
Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V
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BD439/441
O-126
BD440,
BD442
BD439
BD441
BD439
BD441
60V transistor npn 2a
transistor BD441
60V transistor npn 2a switching applications
BD440
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Untitled
Abstract: No abstract text available
Text: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Symbol 80 V Collector Emitter Voltage V cE O 80 V Emitter Base Voltage
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KSD1408
KSB1017
O-220F
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Untitled
Abstract: No abstract text available
Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vottage Collector-Emitter Voltage VcBO 80 VcEO 80 V V Emitter-Base Voltage Collector Current
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KSD526
KSB596
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GE003
Abstract: No abstract text available
Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current
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KSD526
KSB596
GE003
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PDF
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bd177
Abstract: BD175
Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175
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BD175/177/179
BD175
BD177
BD179
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Untitled
Abstract: No abstract text available
Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80
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KSD135/137/139
BD140
BD137
BD139
BD135
BD137,
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MMBTA06LT1
Abstract: mbta06
Text: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage
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MBTA06LT1
500mA
225mW
100mA
100mA
100MHz
062in
MMBTA06LT1
300uS
mbta06
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MMBTA06
Abstract: No abstract text available
Text: MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage
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MMBTA06
OT-23
100mA,
100MHz
MMBTA06
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MMBTA06LT1
Abstract: mbta06
Text: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage
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MBTA06LT1
500mA
225mW
100mA
100mA
100MHz
062in
300uS
MMBTA06LT1
mbta06
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MMBTA06
Abstract: No abstract text available
Text: MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage
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MMBTA06
OT-23
100mA,
100MHz
MMBTA06
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Untitled
Abstract: No abstract text available
Text: Die no. D-16 NPN silicon transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm TO-92 Features available in TO-92 package; for packaging information, see page 448 ITT collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at
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MPS-A06
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BD transistor
Abstract: BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD
Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80
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BD175/177/179
100mA,
150mA
250mA
300ns,
BD transistor
BD NPN transistors
BD175
transistor bd 126
BD 175 transistor
transistor BD
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bd177
Abstract: transistor bd177 BD175
Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 60 80 45 60 80 5 3 7 30 150 -6 5 ^ 1 5 0 V V V V V V V
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BD175/177/179
BD176/178/180
BD175
BD177
BD179
BD175
BD177
transistor bd177
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KSD526
Abstract: KSB596
Text: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POW ER AMPLIFIER A PPLICATIO NS • Com plem ent to KSB596 A BSOLUTE M AXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage V cB O 80 V C ollector-Em itter Voltage VcEO 80 V Emitter-Base Voltage V ebo
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KSD526
KSB596
KSD526
KSB596
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KSB1017
Abstract: KSD1408
Text: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V c bO Sym bol 80 V C ollecto r E m itter Voltage V cE O 80 V Em itter Base Voltage
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KSD1408
KSB1017
O-220F
KSB1017
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1g marking
Abstract: No abstract text available
Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage
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KST05/06
KST05
KST06
KSP05
1g marking
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSD1408 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollecto r Base Voltage V cbO 80 V C ollecto r E m itter Voltage V cE O 80 V E m itter Base Voltage
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KSD1408
KSB1017
O-22QF
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PDF
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KST05
Abstract: KSP05 KST06
Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 60 80 V V VEBO IC PC T STG 60 80 4 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST05 :KST06 Collector-Emitter Voltage
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KST05/06
OT-23
KST05
KST06
KSP05
KST05
KST06
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NPN Transistor VCEO 80V 100V
Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18
Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181
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KSE180/181/182
O-126
KSE181
KSE182
KSE180
100mA
500mA
NPN Transistor VCEO 80V 100V
KSE182
NPN Transistor VCEO 80V 100V hfe 100
KSE180
KSE181
80 V NPN epitaxial silicon transistor
NPN Transistor VCEO 80V 100V DC Current gain 100
transistor 182
kse18
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Untitled
Abstract: No abstract text available
Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGHp POWER TRANSISTOR TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic VcBQ Symbol 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A
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KSD1944
O-22QF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST05/06 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C /W V cbO : KST05 : KST06 C ollector-E m ltter Voltage
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KST05/06
KST05
KST06
KSP05
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BD243
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BD243/A/B/C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD244, BD244A, BD244B and BD244C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V : BD243A 60 V : BD243B 80 V : BD243C
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BD243/A/B/C
BD244,
BD244A,
BD244B
BD244C
BD243A
BD243B
BD243C
BD243
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