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    KSB596 Price and Stock

    onsemi KSB596YTU

    TRANS PNP 80V 4A TO220-3
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    DigiKey KSB596YTU Tube 552 1
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    Newark KSB596YTU Bulk 986 1
    • 1 $1.15
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    • 1000 $0.538
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    KSB596YTU Bulk 343 1
    • 1 $0.406
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    Bristol Electronics KSB596YTU 188
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    Quest Components KSB596YTU 150
    • 1 $0.91
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    Rochester Electronics KSB596YTU 4,155 1
    • 1 $0.4463
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    Flip Electronics KSB596YTU 1,000
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    onsemi KSB596Y

    TRANS PNP 80V 4A TO220-3
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    DigiKey KSB596Y Bulk
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    onsemi KSB596O

    TRANS PNP 80V 4A TO220-3
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    DigiKey KSB596O Bulk 1,200
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    onsemi KSB596OTU

    TRANS PNP 80V 4A TO220-3
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    DigiKey KSB596OTU Tube 1,000
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    Aptina Imaging KSB596YTU

    Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220 Tube
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    Verical KSB596YTU 3,185 747
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    KSB596YTU 970 747
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    KSB596 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSB596 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB596 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
    KSB596 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    KSB596 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSB596 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSB596 Samsung Electronics PNP Epitaxial Silicon Transistor Scan PDF
    KSB596O Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB596OTU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB596R Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB596Y Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB596YTU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB596YTU_NL Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF

    KSB596 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSB596

    Abstract: KSD526
    Text: KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 80 V VCEO


    Original
    PDF KSD526 KSB596 O-220 KSD526 KSB596

    Untitled

    Abstract: No abstract text available
    Text: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter - 80


    Original
    PDF KSB596 KSD526 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSD526 KSD526 Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 80 Units


    Original
    PDF KSD526 KSB596 O-220

    KSB596

    Abstract: KSD526
    Text: KSD526 KSD526 Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 80 Units


    Original
    PDF KSD526 KSB596 O-220 KSB596 KSD526

    Untitled

    Abstract: No abstract text available
    Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO-220 • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C


    Original
    PDF KSD526 KSB596 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage


    Original
    PDF KSD526 KSB596 O-220 KSD526

    KSB596

    Abstract: KSD526
    Text: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 80 Units


    Original
    PDF KSB596 KSD526 O-220 KSB596 KSD526

    Untitled

    Abstract: No abstract text available
    Text: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 80 Units


    Original
    PDF KSB596 KSD526 O-220 Cut-220

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original
    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original
    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original
    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage


    OCR Scan
    PDF KSB596 KSD526 GQG77fe

    KSD526

    Abstract: KSB596
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POW ER AMPLIFIER A PPLICATIO NS • Com plem ent to KSB596 A BSOLUTE M AXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage V cB O 80 V C ollector-Em itter Voltage VcEO 80 V Emitter-Base Voltage V ebo


    OCR Scan
    PDF KSD526 KSB596 KSD526 KSB596

    Untitled

    Abstract: No abstract text available
    Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -220 • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc= 2 5 °C


    OCR Scan
    PDF KSD526 KSB596

    Untitled

    Abstract: No abstract text available
    Text: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage


    OCR Scan
    PDF KSB596

    KSB596

    Abstract: KSD526
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB596 POW ER AMPLIFIER A PPLICATIO NS • C o m p le m e n t to K S D 5 2 6 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r-B a s e V o lta g e C h a r a c te r is tic V cbO Sym bol - 80 V C o lle c to r-E m ltte r V o lta g e


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    PDF KSB596 KSD526 O-220 KSB596 KSD526

    Untitled

    Abstract: No abstract text available
    Text: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSD526 ABSOLUTE MAXIMUM RATINGS Rating Unit VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter-Base Voltage Collector Current V ebo - 5 V Base Current Ib -4 -0.4 A


    OCR Scan
    PDF KSB596 KSD526

    Untitled

    Abstract: No abstract text available
    Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vottage Collector-Emitter Voltage VcBO 80 VcEO 80 V V Emitter-Base Voltage Collector Current


    OCR Scan
    PDF KSD526 KSB596

    GE003

    Abstract: No abstract text available
    Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current


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    PDF KSD526 KSB596 GE003

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB596 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSD526 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO Sym bol - 80 V C ollector-E m ltter Voltage V cE O - 80 V Em itter-Base Voltage


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    PDF KSB596 KSD526

    Untitled

    Abstract: No abstract text available
    Text: PNP EXITAXIAL SILICON TRANSISTOR KSB596 POWER AMPLIFIER APPLICATIONS TO -220 • Com plem ent to KSD526 ABSOLUTE MAXIMUM RATINGS C h a ra cte ris tic Rating Unit -8 0 -8 0 -5 -4 -0 .4 30 1 50 -5 5 ^ 1 5 0 V V V A A W "C ”C S ym bol Collector-Base Voltage


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    PDF KSB596 KSD526