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    80N10 Search Results

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    80N10 Price and Stock

    Infineon Technologies AG IPD180N10N3GATMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey IPD180N10N3GATMA1 Reel 5,000 2,500
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    Avnet Americas IPD180N10N3GATMA1 Reel 16 Weeks 2,500
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    Mouser Electronics IPD180N10N3GATMA1 11,687
    • 1 $0.65
    • 10 $0.642
    • 100 $0.539
    • 1000 $0.452
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    Bristol Electronics IPD180N10N3GATMA1 324
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    Rochester Electronics IPD180N10N3GATMA1 1
    • 1 $0.5017
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    • 100 $0.4716
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    Chip1Stop IPD180N10N3GATMA1 Cut Tape 2,273
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    • 100 $0.58
    • 1000 $0.421
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    EBV Elektronik IPD180N10N3GATMA1 17 Weeks 2,500
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    Win Source Electronics IPD180N10N3GATMA1 23,700
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    • 100 $0.6683
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    Infineon Technologies AG ISZ080N10NM6ATMA1

    TRENCH >=100V PG-TSDSON-8
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    DigiKey ISZ080N10NM6ATMA1 Reel 5,000 5,000
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    Mouser Electronics ISZ080N10NM6ATMA1 8,262
    • 1 $1.95
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    • 100 $0.994
    • 1000 $0.718
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    Newark ISZ080N10NM6ATMA1 Cut Tape 12,340 1
    • 1 $0.594
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    Chip1Stop ISZ080N10NM6ATMA1 Cut Tape 9,622
    • 1 $1.45
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    • 100 $0.728
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    EBV Elektronik ISZ080N10NM6ATMA1 13 Weeks 5,000
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    Littelfuse Inc IXTP180N10T

    MOSFET N-CH 100V 180A TO220AB
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    DigiKey IXTP180N10T Tube 3,040 1
    • 1 $5.35
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    Littelfuse Inc IXTA80N10T

    MOSFET N-CH 100V 80A TO263
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    DigiKey IXTA80N10T Tube 2,455 1
    • 1 $4.03
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    Newark IXTA80N10T Bulk 300
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    Diotec Semiconductor AG DI280N10TL

    MOSFET TOLL N 100V 0.002OHM 175C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DI280N10TL Digi-Reel 1,904 1
    • 1 $4.41
    • 10 $3.066
    • 100 $4.41
    • 1000 $1.93988
    • 10000 $1.93988
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    DI280N10TL Cut Tape 1,904 1
    • 1 $4.41
    • 10 $3.066
    • 100 $4.41
    • 1000 $1.93988
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    Mouser Electronics DI280N10TL 1,779
    • 1 $4.41
    • 10 $3.07
    • 100 $2.27
    • 1000 $1.94
    • 10000 $1.93
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    TME DI280N10TL 1
    • 1 $3.31
    • 10 $2.98
    • 100 $2.36
    • 1000 $2.23
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    Find more 80N10 price and stock on Findchips.com

    80N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N10

    Abstract: 80N10Q
    Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10Q 200ns O-247 80N10 80N10Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 80N10Q ISOPLUS247

    smd marking 58a

    Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
    Text: 80N10L 80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking 80N10L PG-TO220-3-1 Q67042-S4173 80N10L


    Original     		PDF SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A

    80N10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10 ISOPLUS220TM 728B1 123B1 728B1 065B1 80N10

    80N10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 80N10 728B1 123B1 065B1 80N10

    80N10

    Abstract: to-268
    Text: HiPerFETTM Power MOSFETs VDSS = 100 V = 80 A ID25 Ω RDS on = 12.5 mΩ IXFH 80N10 IXFT 80N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR VGS Maximum Ratings


    Original     		PDF 80N10 O-247 O-268 O-268 80N10 to-268

    80N10Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q-Class VDSS ID25 RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10Q 80N10Q 200ns O-247 O-268 O-268

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns = 100 V = 76 A = 15 mW RDS(on) Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 80N10Q ISOPLUS247

    ISOPLUS247

    Abstract: 80N10Q E153432 80N10
    Text: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 80N10Q ISOPLUS247 247TM E153432 ISOPLUS247 80N10Q E153432 80N10

    80N10

    Abstract: 4800 mosfet mosfet 4800
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10 ISOPLUS220TM 80lse 80N10 4800 mosfet mosfet 4800

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10Q 80N10Q 200ns O-247 O-268 O-268AA

    80N10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 80N10 220TM 80N10

    smd marking 58a

    Abstract: 80N10L SPP80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1
    Text: Preliminary data 80N10L 80N10L,80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 100 V RDS on 14 m ID 80 A P-TO263-3-2


    Original     		PDF SPI80N10L SPP80N10L SPB80N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N10L Q67042-S4173 80N10L smd marking 58a 80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    smd marking 58a

    Abstract: 80N10L IEC61249-2-21 SPB80N10L SPP80N10L
    Text: 80N10L G SIPMOSΤΜPower-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package 80N10L P-TO263-3 100 VDS V RDS on


    Original     		PDF SPB80N10L P-TO263-3 IEC61249-2-21 80N10L SPP80N10L O263-3 smd marking 58a 80N10L IEC61249-2-21 SPB80N10L SPP80N10L

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    Untitled

    Abstract: No abstract text available
    Text: 80N10F7, 80N10F7, 80N10F7-2, 80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB Order codes 3 1 DPAK 1 2 3 TO-220FP 80N10F7 80N10F7


    Original     		PDF STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 O-220FP, O-220 O-220FP STF80N10F7 STD80N10F7 STH80N10F7-2

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q Class R DS on = 100 V = 80 A = 15 m f t t < 200 ns V DSS ^D25 rr N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions


    OCR Scan     		PDF 80N10Q 80N10Q O-247 O-268