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    80N20 Search Results

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    80N20 Price and Stock

    Micro Commercial Components MCTL80N20Y-TP

    N-CHANNEL MOSFET,TOLL-8L
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    DigiKey MCTL80N20Y-TP Digi-Reel 3,984 1
    • 1 $6.12
    • 10 $4.103
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    MCTL80N20Y-TP Cut Tape 3,984 1
    • 1 $6.12
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    MCTL80N20Y-TP Reel 2,000 2,000
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    Mouser Electronics MCTL80N20Y-TP 1,943
    • 1 $5.57
    • 10 $4.11
    • 100 $2.96
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    STMicroelectronics STB80N20M5

    MOSFET N-CH 200V 61A D2PAK
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    DigiKey STB80N20M5 Digi-Reel 631 1
    • 1 $6.84
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    STB80N20M5 Cut Tape 631 1
    • 1 $6.84
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    Mouser Electronics STB80N20M5
    • 1 $5.84
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    Newark STB80N20M5 Cut Tape 951 1
    • 1 $5.84
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    STMicroelectronics STB80N20M5 1
    • 1 $5.72
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    TME STB80N20M5 1
    • 1 $5.5
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    Avnet Silica STB80N20M5 17 Weeks 1,000
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    EBV Elektronik STB80N20M5 5,000 27 Weeks 1,000
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    Littelfuse Inc IXFH180N20X3

    MOSFET N-CH 200V 180A TO247
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    DigiKey IXFH180N20X3 Tube 542 1
    • 1 $12.65
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    RS IXFH180N20X3 Bulk 8 Weeks 30
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    Littelfuse Inc IXTT80N20L

    MOSFET N-CH 200V 80A TO268
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    DigiKey IXTT80N20L Tube 469 1
    • 1 $21.78
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    Newark IXTT80N20L Bulk 156 1
    • 1 $18.92
    • 10 $15.73
    • 100 $13.19
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    Littelfuse Inc IXFT180N20X3HV

    MOSFET N-CH 200V 180A TO268HV
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    DigiKey IXFT180N20X3HV Tube 29 1
    • 1 $16.65
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    Newark IXFT180N20X3HV Bulk 300
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    RS IXFT180N20X3HV Bulk 8 Weeks 30
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    Find more 80N20 price and stock on Findchips.com

    80N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N20Q

    Abstract: TO264 footprint
    Text: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 80N20Q 80N20Q O-247 O-268AA TO264 footprint

    ixfh 26 n 49

    Abstract: IRM80
    Text: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 80N20Q ixfh 26 n 49 IRM80

    DSA003712

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 200 V = 80 A = 28 mW trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 80N20Q 80N20Q O-264 DSA003712

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 200 V = 80 A = 28 mW trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 80N20Q 80N20Q O-264

    ISOPLUS247

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N20Q ISOPLUS247 247T5 ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class = 200 V = 80 A = 28 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 80N20Q 80N20Q O-247 TAB25 O-268

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N20Q ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFK72N20 80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 72N20 80N20 80N20 IXFK72N20 IXFK80N20 125OC Figure10.

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFK72N20 80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK72N20 IXFK80N20 72N20 80N20 125OC Figure10.

    125OC

    Abstract: IXFK72N20 IXFK80N20
    Text: HiPerFETTM Power MOSFETs VDSS IXFK72N20 80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK72N20 IXFK80N20 72N20 80N20 125OC Figure10. 125OC IXFK72N20 IXFK80N20

    80N20

    Abstract: No abstract text available
    Text: Preliminary Technical Information Extended FBSOA Power MOSFET IXTH1910 IXTT1910 IXTK1910 VDSS ID25 = 200V = 80A Ω ≤ 28mΩ RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTH1910 IXTT1910 IXTK1910 O-247 00A/s, 100ms 80N20

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    STP80N20M5

    Abstract: 80N20M5 STB80N20M5 80N20 stb80n20
    Text: 80N20M5 80N20M5 N-channel 200 V, 0.019 Ω, 61 A, TO-220, D2PAK MDmesh V Power MOSFET Features Type 80N20M5 80N20M5 VDSS @ TJmax RDS on max 200 V < 0.023 Ω ID 61 A 61 A 3 3 • Amongst the best RDS(on) * area ■ High dv/dt capability ■


    Original     		PDF STB80N20M5 STP80N20M5 O-220, O-220 STP80N20M5 80N20M5 STB80N20M5 80N20 stb80n20

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: nixY S Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 80N20Q 80N20Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt t V ~ ^ uu n s 1° OS Maximum Ratings Symbol Test Conditions V *oss Tj =25°Cto150°C 200 V Tj = 25° C to 150° C; RGS= 1 MQ


    OCR Scan     		PDF 80N20Q IXFT80N20Q Cto150 O-268

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HHifl JL æ* X HiPerFET Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, LowQg V^ = 200 V U = R ds ,o„, = trr < 200 ns 80 A 28m Q Preliminary data sheet Maximum Ratings Symbol TestConditions


    OCR Scan     		PDF 80N20Q

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q Maximum Ratings Test C onditions VOSS v DQB T j =25°Cto150°C 200 V T j = 25° C to 150° C; RGS= 1 Mi2 200 V v GS v GSM Continuous i2 0 V Transient ±30 V ^D25


    OCR Scan     		PDF 80N20Q 80N20Q Cto150 O-264 PLUS247TM di/dts100A

    Untitled

    Abstract: No abstract text available
    Text: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings


    OCR Scan     		PDF 80N20Q ISOPLUS247TM, Cto150 247TM

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    80N20

    Abstract: TEA 2029 A
    Text: IÖIXYS HiPerFET Power MOSFETs v p DSS ^D25 DS on 200 V 72 A 35 mû 200 V 80 A 30 m a t < 200 ns IXFK72N20 80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VOSS Tj = 2 5 °C tO l50°C


    OCR Scan     		PDF IXFK72N20 IXFK80N20 72N20 80N20 80N20 25value IXFK72N20 TEA 2029 A

    TOp-264 vg

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS VGSM Continuous ±20


    OCR Scan     		PDF 72N20 80N20 O-264 IXFK72N20 IXFK80N20 TOp-264 vg