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IXYS Corporation IXSK80N60B IGBT 600V 160A 500W TO264
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DigiKey	IXSK80N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSX80N60B IGBT 600V 160A 500W PLUS247
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DigiKey	IXSX80N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSN80N60BD1 IGBT MOD 600V 160A 420W SOT227B
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DigiKey	IXSN80N60BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

80N60B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
80N60B		IXYS			Original	PDF

80N60B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
80n60 Abstract: 80N60B ixsk 80n60b Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	PDF	80N60B 247TM PLUS247TM 80n60 ixsk 80n60b
80n60 Abstract: 80N60B Text: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30	Original	PDF	80N60B 247TM 728B1 80n60 80N60B
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600	Original	PDF	80N60B
Untitled Abstract: No abstract text available Text: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30	Original	PDF	80N60B 247TM 728B1
80n60 Abstract: O M 335 80N60B PF650 Text: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A	Original	PDF	80N60BD1 OT-227 728B1 80n60 O M 335 80N60B PF650
80n60 Abstract: 80N60BD1 2X6-10 IXSN80N60BD1 2X61-06A Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	80N60BD1 2x61-06A 065B1 728B1 123B1 728B1 80n60 2X6-10 IXSN80N60BD1 2X61-06A
80n60 Abstract: Siemens DIODE E 1240 80N60B 60-06A 6006A Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	80N60BD1 0-06A 728B1 123B1 728B1 065B1 80n60 Siemens DIODE E 1240 80N60B 60-06A 6006A
Siemens DIODE E 1240 Abstract: No abstract text available Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	80N60BD1 0-06A 728B1 123B1 065B1 Siemens DIODE E 1240
Untitled Abstract: No abstract text available Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.3 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	PDF	80N60B 247TM PLUS247TM
Untitled Abstract: No abstract text available Text: IXSN 80N60BD1 Symbol Test Conditions g fs IC = 60 A; VCE = 10 V, Note1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. 40 52 S 6600 pF 660 pF C res 196 pF Qg 240 nC 85 nC 90 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V, L = 100 µH,	Original	PDF	80N60BD1 OT-227 728B1
Untitled Abstract: No abstract text available Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E Symbol Test Conditions V CES TJ = 25°C to 150°C E Maximum Ratings 600 miniBLOC, SOT-227 B E153432 E V G V CGR	Original	PDF	80N60BD1 OT-227 E153432 2x61-06A 065B1 728B1 123B1 728B1
80n60 Abstract: 80N60B Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	PDF	80N60B 247TM O-264 PLUS247TM 80n60
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q