810240IVA Search Results

810240IVA Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
810240IVA		Intersil	4096 x 1 CMOS RAM		Original	PDF
810240IVA		Intersil	4096 x 1 CMOS RAM		Original	PDF

810240IVA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
24501BVA Abstract: 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 HM-6504 Text: HM-6504 TM 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and	Original	HM-6504 HM-6504 35mW/MHz 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9	PDF
6504 Abstract: HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 Text: HM-6504 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low	Original	HM-6504 HM-6504 35mW/MHz 6504 HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9	PDF
HM3-6504-9 Abstract: HM-6504 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 6504 Text: HM-6504 S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes	Original	HM-6504 HM-6504 35mW/MHz HM3-6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 6504	PDF
HM1-6504-9 Abstract: HM3-6504-9 HM4-6504-9 HM-6504 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9 Text: HM-6504 HARRIS æ S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power S tan db y. 125\|aW Max • Low Power O p e ra tio n . 35mW /MHz Max • Data R e te n tio n . at 2.0V Min	OCR Scan	HM-6504 35mW/MHz 120/200ns HM-6504 HM1-6504-9 HM3-6504-9 HM4-6504-9 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9	PDF
6504 Abstract: 6132 RAM Text: HM-6504 HARRIS S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. 125\|iW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes	OCR Scan	HM-6504 HM-6504 6504 6132 RAM	PDF
6132 RAM Abstract: No abstract text available Text: HM-6504 fü HARRIS S E M I C O N D U C T O R 4096 x 1 C M O S RAM August 1996 Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low	OCR Scan	HM-6504 HM-6504 6132 RAM	PDF
6132 RAM Abstract: HM-6504-9 Text: HM-6504 S e m iconductor 4096 x 1 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max Low Power O p eratio n . 35mW/MHz Max Data 2.0V Min	OCR Scan	HM-6504 HM-6504 6132 RAM HM-6504-9	PDF
6504-9 Abstract: HM1-6504-9 6504-8 Text: HM-6504 ff! HARRIS S E MI C O N D U C T O R 4096 February 1992 X 1 CMOS RAM Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low	OCR Scan	HM-6504 HM-6504 6504-9 HM1-6504-9 6504-8	PDF
Untitled Abstract: No abstract text available Text: HARRIS SEMICOND SECTOR 4bE D • 4302271 OOB^lOM 3 « H A S HM-6504 “ T -M -fe -Z 5 -0 5 4096 February 1992 X 1 CMOS RAM Features Description • Low Power Standby. 125\|iW Max. The HM-6504 is a 4096 x 1 static CMOS RAM fabricated	OCR Scan	HM-6504 35mW/MHzMax. 120/200ns HM-6504	PDF