Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    846 TRANSISTOR Search Results

    846 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    846 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistors BC 23

    Abstract: 849B 847C 848B
    Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


    Original
    OT-23 O-236) UL94V-0 transistors BC 23 849B 847C 848B PDF

    306-061

    Abstract: Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay
    Text: Issued March 1997 232-3175 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low


    Original
    12Vdc 100mA 306-061 Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay PDF

    7473 pin diagram

    Abstract: pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 6900K4 VZU-6991K4
    Text: 6900K4 Series 20 Watt Power Amplifier Features Description • • • • 4.0 TO 18 GHz Octave Bandwidths or Greater Optional GPIB Control One Year Warranty Unlimited Hours • Worldwide Support Centers • 24 Hour Hotline for customer support (800) 231-4818 or 1-650-846-3700


    Original
    6900K4 89/336/EEC 7473 pin diagram pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 VZU-6991K4 PDF

    DC solid state relay 12vdc

    Abstract: opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch
    Text: Issued November 1989 009-912 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low


    Original
    12Vdc 100mA DC solid state relay 12vdc opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch PDF

    transistors BC 848

    Abstract: VSO05561 21E sot
    Text: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2


    Original
    VSO05561 846AW OT-323 846BW 847AW 847BW 847CW transistors BC 848 VSO05561 21E sot PDF

    1bs sot323

    Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W PDF

    BC857

    Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original
    BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC857 BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856 PDF

    BC846AT

    Abstract: BC846BT BC846T BC847AT BC847BT BC850T BC856T BC857T BC858T BC859T
    Text: BC846T.BC850T NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1


    Original
    BC846T. BC850T BC856T, BC857T, BC858T, BC859T, BC846AT BC846BT BC847AT BC846AT BC846BT BC846T BC847AT BC847BT BC850T BC856T BC857T BC858T BC859T PDF

    R2M 45

    Abstract: TE-32 traffic light c language HD6432353 HD6432355 HD6472355 Hitachi DSA00247 Nippon capacitors
    Text: REJ09B0354-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2355 Group 16 Hardware Manual


    Original
    REJ09B0354-0400 H8S/2355 16-Bit Family/H8S/2300 H8S/2355 H8S/2353 H8S/2393 HD6432355 HD6472355 HD6432353 R2M 45 TE-32 traffic light c language HD6432353 HD6432355 HD6472355 Hitachi DSA00247 Nippon capacitors PDF

    HD64F2238BFA13

    Abstract: ac SYNCHRONOUS MOTOR WIRING HD64F2238BF13 HD64F2238BTF13 HD64F2238RBR13 H722 cr 6848 HD6432227 HD64F2238BTE HD64F2239
    Text: The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2239, H8S/2238, H8S/2237, H8S/2227 Group


    Original
    H8S/2239, H8S/2238, H8S/2237, H8S/2227 16-Bit Family/H8S/2200 HD64F2238BFA13 ac SYNCHRONOUS MOTOR WIRING HD64F2238BF13 HD64F2238BTF13 HD64F2238RBR13 H722 cr 6848 HD6432227 HD64F2238BTE HD64F2239 PDF

    HD64F2215

    Abstract: HD64F2215TU REJ10J2169
    Text: The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 H8S/2215 Group User's Manual: Hardware Renesas 16-Bit Single-Chip Microcomputer


    Original
    H8S/2215 16-Bit Family/H8S/2200 H8S/2215 H8S/2215R H8S/2215T H8S/2215C HD64F2215 HD64F2215U HD6432215B HD64F2215 HD64F2215TU REJ10J2169 PDF

    MOCD211

    Abstract: D211 RS481A motorola opto coupler
    Text: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [CTR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a


    Original
    MOCD211/D MOCD211 MOCD211 MOCD211/D* OptoelectronicsMOCD211/D D211 RS481A motorola opto coupler PDF

    2SD1541

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1541 Features • • NPN Silicon Power Transistors With TOP-3Fa package Intended for use in horizontal deflection circuits of color television


    Original
    2SD1541 100mAdc 10Vdc) 75Adc) 2SD1541 PDF

    opto d213

    Abstract: d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint
    Text: MOTOROLA Order this document by MOCD213/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolator MOCD213 Transistor Output [CTR = 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface


    Original
    MOCD213/D MOCD213 MOCD213/D* OptoelectronicsMOCD213/D opto d213 d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint PDF

    MOC215

    Abstract: MOC217 MOC216 RS481A
    Text: MOTOROLA Order this document by MOC215/D SEMICONDUCTOR TECHNICAL DATA MOC215 MOC216 MOC217 Small Outline Optoisolators [CTR = 20% Min] Transistor Output Low Input Current [CTR = 50% Min] These devices consist of a gallium arsenide infrared emitting diode optically


    Original
    MOC215/D MOC215 MOC216 MOC217 MOC215 MOC217 MOC216 RS481A PDF

    MOC205

    Abstract: MOC207 MOC206 MOC208 RS481A Motorola diode 207 MOC205 motorola
    Text: MOTOROLA Order this document by MOC205/D SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR = 40 – 80%] Transistor Output [CTR = 63 – 125%] These devices consist of a gallium arsenide infrared emitting diode optically


    Original
    MOC205/D MOC205 MOC206* MOC207* MOC208* MOC205 MOC207 MOC206 MOC208 RS481A Motorola diode 207 MOC205 motorola PDF

    D217 OPTO

    Abstract: D217 MOCD217 motorola transistor number 18 transistor 164 motorola RS481A Optoelectronics Device data
    Text: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD217 Transistor Output Low Input Current [CTR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a


    Original
    MOCD217/D MOCD217 MOCD217 D217 OPTO D217 motorola transistor number 18 transistor 164 motorola RS481A Optoelectronics Device data PDF

    D217 OPTO

    Abstract: MOCD217 D217 RS481A
    Text: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD217 Transistor Output Low Input Current [CTR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a


    Original
    MOCD217/D MOCD217 MOCD217 MOCD217/D* OptoelectronicsMOCD217/D D217 OPTO D217 RS481A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2846 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 846 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS


    OCR Scan
    2SK2846 PDF

    Untitled

    Abstract: No abstract text available
    Text: FT NPN Silicon AF Transistors 35E D • 6 5 3 b 3 5 Q O O lb b S H T - i * ? '1 9 ' BC 846 b M S I P _ - B C 850 SIEMENS/ SPCL-, SEMICONDS • • • • • For AF input stages and driver applications High current gain Low coilector-emitter saturation voltage


    OCR Scan
    fl23fc PDF

    MRF846

    Abstract: CASE 305A-01 MRF844 MRF870A 305a MRF839 mrf892 305a-01 case 244-04 case 317-01
    Text: RF PRODUCTS — EJIPOLAR POWER TRANSISTORS continued CASE 244-04 (.280'' Stud; CASE 305A-01 ( 204" Pill) CASE 305-01 (.204" Stud) CASE 319-04 (CS-12) CASE 317-01 (Macro-X) UHF: Applications (continued) _ I 8 0 6 -9 6 0 MHz, FM Transistors Designed specifically for the 800 MHz mobile radio band, types MRF840 through 846 offer superior gain and ruggedness, using


    OCR Scan
    05A-01 CS-12) MRF840 CS-12 MRF559 MRF581 MRF837 317-0e MRF846 CASE 305A-01 MRF844 MRF870A 305a MRF839 mrf892 305a-01 case 244-04 case 317-01 PDF

    transistors BC 23

    Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
    Text: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N


    OCR Scan
    P3000 BSS64 BSS79 BSS81 BSS63 transistors BC 23 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55 PDF

    H7545

    Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
    Text: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60


    OCR Scan
    BCX20 BSS64 SOA05 SQA06 H7545 TR BC 817-25 BCV72 BCW31 BCW32 70G45 B 250 C 100 K4 PDF

    D846

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ 450 V/|as, Precision, Current-Feedback Op Amp AD846 FEATURES C O N N E C T IO N DIA G R A M AC PERFORMANCE Small Signal Bandwidth: 80 M H z Av = - 1 Slew Rate: 450 V/fjis Full Power Bandwidth: G.8 M H z at 20 V p-p, Plastic M ini-DIP (N ) Package


    OCR Scan
    AD846 12-bit D846 PDF