BF963
Abstract: bf965 BF960 BF 960 14271-D u971 BF996S
Text: SIEMENS/ SPCL-, SEMICONDS fifl 8236320 SIEMENS/ S P C L , SEMICONDS ]>F|fl23fc,32D G ü m a T D 1 | ~ Ô8D 14270 D T~ $ I ^ MOS Transistors M OS field effect tetrodes P la s tic p acka g e X-plast Type Maximum ratings N-Kanal I/ds V Id mA Characteristics TA = 25°C
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fl23fc
BF996S
BF963
bf965
BF960
BF 960
14271-D
u971
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SIEMENS VF 100
Abstract: GS7070
Text: Silicon Switching Diode 32E D • BAL99 fl23fc.32G 0GlbM7b b ISIP SIEMENS/ SPCLi SEMI COND S • For high-speed switching Typo Marking Ordering co de for versions In bulk Ordering co d e or version s on 8 mm-tape P acka g e BAL99 JF Q62702-A611 Q62702-A687
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BAL99
fl23fc
Q62702-A611
Q62702-A687
23b320
G01bM7û
T-03-09
fl23fei32Q
SIEMENS VF 100
GS7070
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PHOTO SCR OPTOCOUPLER
Abstract: No abstract text available
Text: SIEMENS CMPNTSi OPTO 4ME D WM fl23fc,32b 0 0 0 5 0 2 4 SIEM ENS -T-m-yi 0 B SIEX IL400 PHOTO SCR OPTOCOUPLER Advance Data Sheet • 400 Volts Blocking Voltage • TUrn On Current lft S.O m A typical • Gate Trigger Current (IqT) - 20/iA • Gate Trigger Voltage (tQT) - 0.6 Volt
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fl23fc
IL400
20/iA
E52744
IL400
PHOTO SCR OPTOCOUPLER
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r
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fl23fc
QL73L3
23b320
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 200 SILICON PHOTODIODE LOW DARK CURRENT FEA TURES • Very Large Zero Crossover * High Reliability * • * • 0.2* S.08 mm Lead Spacing Low Noise Transparent Plastic Package Short Switching Time DESCRIPTIO N The SFH 200 silicon planar photodiode,
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fl23fci32k.
SKH200
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SFH 910
Abstract: No abstract text available
Text: SFH 910 SIEMENS Dît rERLNTIAL PHOTO INTERRRUPTER WITH COUNTING PULSE & DIRECTION RECOGNITION P a cka g e D im e n sio n s in In c h e s m m 967 (24 6) 1 2 3 4 5 6 951 (24 2) 754 (1 9 15) 746(18 95) 130(3 3) 122(3 1) _20 0 (5 06) Anode Cathode GND Dir Clk
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VpA/F25
SFH910
fl23fc
DQ07SS1
SFH 910
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Untitled
Abstract: No abstract text available
Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.
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823b32Q
62702-F1049
OT-23
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UAA180
Abstract: IR2406 RBG1000
Text: SIEMENS RBG-1000 SUPER-RED OBG-1000 YELLOW YBG-1000 GREEN GBG-1000 RED 10 Element Bar Graph Package Dimensions in Inches mm .010 .04 (1.02) typ. (.25) typ. .100 (2.54) typ. .36 (9.14) .15 (3.81) .99(25.15) T .30 (7.62) L .20 T (5.08) Part Identification Location
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RBG-1000
OBG-1000
YBG-1000
GBG-1000
RBG-1000
200mA
UAA170
UAA180
LM3914
UAA180
IR2406
RBG1000
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Untitled
Abstract: No abstract text available
Text: PNP Silicon AF Transistors 32E D m Û23b320 OOlbbfiS 4 « S I P T 'M - IJ SIEMENS/ SPCL-. SEMICONDS • • • • • a a a a BCW61 BCX71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz
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23b320
BCW61
BCX71
653b350
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 484401 GaAIAs-L \ S E R 5W FEATURES • MOCVD Quantum-Well Structure • Dielectric Asymmetric Coated Laser Mirrors • 5 Laserdiodes on Submount on a Massive Heatsink • Emission Width : 5 x 200 pm; Spacing 2mm • Package: Row Design • Applications
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fl23fci35k>
QGQ74T3
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uaa170
Abstract: UAA180 7 segment led display SIEMENS 12 element LED bar display IR2406 GBG-4850 OBG-4830 led bar siemens 7 segment display lm3915 uaa160
Text: SIEMENS RBG-4820 SUPER-RED OBG-4830 YELLOW YBG-4840 GREEN GBG-4850 RED 10 Element Linear Display Package Dimensions in Inches mm P ro d u c t M a rk in g E le m e n t 10 Maximum Ratings S torage/O perating Tem perature R a n g e . -20°C to +85°C
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RBG-4820.
OBG-4830,
YBG-4840,
GBG-4850
UAA170
UAA180
LM3914
LM3915
IR2406
UAA180
7 segment led display SIEMENS
12 element LED bar display
IR2406
OBG-4830
led bar siemens
7 segment display lm3915
uaa160
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IL300G
Abstract: siemens IL300-EF IL300 equivalent IL300 IL300-D r4k diode optocouplers 501 353b3 IL300-X006 simple servo amplifer
Text: SIEMENS IL300 LINEAR OPTOCOUPLERS FEATURES • • • • Couples AC and DC signals 0.01% Servo Linearity W ide Bandwidth, >200 KHz High Gain Stability, ±0.005%/°C Low Input-Output Capacitance Low Power C onsumption, < 15mw W ithstand Test Voltage, 7500 V A C ^ ,
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IL300
E52744
-X001
IL300G
IL300-X006
IL300
siemens IL300-EF
IL300 equivalent
IL300-D
r4k diode
optocouplers 501
353b3
IL300-X006
simple servo amplifer
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BC5471
Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N
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BC1671
BC1681
BC1821
BC2121
BC2371
BC2381
BC2391
BC2571
BC2581
BC2591
BC5471
BC547E
BC 548 NPN
relay 876 N 2C S
BC5461
BC516 548
BC550
bc4151
TLC 5491
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DL1414
Abstract: DL1414T DL1414* display IDA1414-16 dl-1414 multiplex dual digit seven segment display siex Alphanumeric 14 SEGMENT DUAL Intelligent Display IDA141416-2 Berg ribbon cable
Text: IDA1414-16 SIEMENS .112" Red, 17 Segment, 16 Character DL1414 Intelligent Display Assembly IDA1414-16-1 Buffered Input Data Lines rm F .30 4.50 - .28-1 •121 -3.625.82 Ref. " 1 <— T .950 00® cs 2)a:3® © e30cc L □T 1.20 JL £-.118 4 Places FEATURES
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IDA1414-16
DL1414
IDA1414-16-1
e30cc
DL1414T
a53b33b
DL1414* display
IDA1414-16
dl-1414
multiplex dual digit seven segment display
siex
Alphanumeric 14 SEGMENT DUAL Intelligent Display
IDA141416-2
Berg ribbon cable
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Untitled
Abstract: No abstract text available
Text: LS K382 YELLOW LY K382 GREEN LG K382 ORANGE LO K382 PURE GREEN LP K382 SIEMENS SUPER-RED T1 3mm Super ARGUS LED Lamp Package Dimensions in Inches (mm) Surface not flat 028 (0.7) 0 1 |0 < ) T T 141 (3.6) .126 (3.2) .031 (0.8) .016(0.4) LED Lamps .024 (0.6)
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fl23fc
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transistor c 6093
Abstract: transistor c 6091 transistor C 6092 IOR 5300 diode gde 78
Text: SIEMENS CAPITAL/ OPTO •=]□ D § ÛS3L,32t, D0D3347 3 Jj T-Vl-ÎZ SFH609 S IEM EN S Oplocoupleis Optolsolatois HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER FEATURES Maximum Ratings • H ighest Q u ality Prem ium Device Emitter (GaAs infrared emitter)
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D0D3347
SFH609
E52744
257-7910/TWX
transistor c 6093
transistor c 6091
transistor C 6092
IOR 5300
diode gde 78
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m867
Abstract: ntc m867
Text: SFH 482201 SIEMENS G aA lA s-LA S ER DIODE 250 mW Package Dimensions in mm 1. 2. 3 4. Peltier-Cooler + NTC NTC Laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode Peltier-Cooler (-) FEATURES Maximum Ratings * Quantum-W ell Structure Manufactured
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00Q7MSb
m867
ntc m867
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Untitled
Abstract: No abstract text available
Text: FT NPN Silicon AF Transistors 35E D • 6 5 3 b 3 5 Q O O lb b S H T - i * ? '1 9 ' BC 846 b M S I P _ - B C 850 SIEMENS/ SPCL-, SEMICONDS • • • • • For AF input stages and driver applications High current gain Low coilector-emitter saturation voltage
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fl23fc
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B80C
Abstract: No abstract text available
Text: B EE D • ô23b32Q Q017131 T « SIP PNP Silicon Switching Transistors _ S IE M E N S / SPCLi BSS 80 BSS 82 T ' SEM ICO N D S _ High D C current gain Low collector-emitter saturation voltage Complementary types: B S S 79, B S S 81 NPN Type BSS
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23b32Q
Q017131
Q62702-S398
Q62702-S399
Q62702-S409
Q62702-S408
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
B80C
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Untitled
Abstract: No abstract text available
Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23b320
BFR35AP
62702-F
OT-23
T-31-17
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Untitled
Abstract: No abstract text available
Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!
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023b3SG
62702-F1
OT-143
-J250
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