Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KL70ZA6F
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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CR10
Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)
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M58WR064HU
M58WR064HL
66MHz
CR10
CR14
M58WR064HL
M58WR064HU
VFBGA44
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CR14
Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
CR14
M58WR032KU
VFBGA44
MS-328
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KU70ZA6U
M58WR064K
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m36w0r6050u
Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory
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M36W0Rx0x0UL4
64-Mbit
32-Mbit
M36W0R5040U4:
8828h
M36W0R5040L4:
8829h
M36W0R6040U4
M36W0R6050U4:
88C0h
m36w0r6050u
m36w0r6040u
M36W0R5040
M36W0R5040u
M36W0R6050U4
M69KM024A
ADQ14
M69KM048A
ADQ15
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M58WR064HUL
Abstract: 04MAY2006
Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)
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M58WR064HU
M58WR064HL
M58WR064HUL
04MAY2006
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Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
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m36w0r6050u
Abstract: M36W0R M36W0R605 M58WR064HUL 221 ball MCP
Text: M36W0R6050U0 M36W0R6050L0 64-Mbit mux I/O, multiple bank, burst flash memory 32-Mbit PSRAM, 1.8 V supply MCP Features • Multichip package – 1 die of 64 Mbit (4 Mb x16, mux I/O multiple bank, burst) flash memory – 1 die of 32 Mbit mux I/O, burst PSRAM
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M36W0R6050U0
M36W0R6050L0
64-Mbit
32-Mbit
88C0h
88C1h
m36w0r6050u
M36W0R
M36W0R605
M58WR064HUL
221 ball MCP
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M58WR064KU
Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
88C0
CR14
M58WR032KU
VFBGA44
M58WR064KL
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S3 Vision864
Abstract: S3 vision868 vision968 s3 tech PD-60 vision864 Vision9 928PCI 3c3h CR683
Text: Vision864 Graphics Accelerator S 3 In c o rp o ra te d Vision864 Graphics Accelerator October 1994 S3 Incorporated 2770 San Tomas Expressway îanta Clara, CA 95051-0968 d f t _ T005[m 00 00731 b40 Vision864 Graphics Accelerator S 3 In c o rp o ra te d
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OCR Scan
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PDF
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Vision864
208-pin
S3 Vision864
S3 vision868
vision968
s3 tech
PD-60
Vision9
928PCI
3c3h
CR683
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