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    88N30P Search Results

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    88N30P Price and Stock

    Littelfuse Inc IXTT88N30P

    MOSFET N-CH 300V 88A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT88N30P Tube 629 1
    • 1 $14.82
    • 10 $14.82
    • 100 $9.07233
    • 1000 $7.68663
    • 10000 $7.68663
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    Newark IXTT88N30P Bulk 297 1
    • 1 $12.73
    • 10 $10.46
    • 100 $8.19
    • 1000 $7.53
    • 10000 $7.53
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    Littelfuse Inc IXFK88N30P

    MOSFET N-CH 300V 88A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK88N30P Tube 596 1
    • 1 $14.65
    • 10 $14.65
    • 100 $14.65
    • 1000 $14.65
    • 10000 $14.65
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    RS IXFK88N30P Bulk 8 Weeks 25
    • 1 -
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    • 100 $13.82
    • 1000 $13.82
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    Littelfuse Inc IXTQ88N30P

    MOSFET N-CH 300V 88A TO3P
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    DigiKey IXTQ88N30P Tube 163 1
    • 1 $13.5
    • 10 $13.5
    • 100 $8.198
    • 1000 $6.81175
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    Littelfuse Inc IXFT88N30P

    MOSFET N-CH 300V 88A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT88N30P Tube 300
    • 1 -
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    • 1000 $8.46827
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    Newark IXFT88N30P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $8.88
    • 10000 $8.88
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    Littelfuse Inc IXFH88N30P

    MOSFET N-CH 300V 88A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH88N30P Tube 300
    • 1 -
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    • 100 -
    • 1000 $8.43113
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    Newark IXFH88N30P Bulk 300
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    • 1000 $8.84
    • 10000 $8.84
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    RS IXFH88N30P Bulk 8 Weeks 30
    • 1 -
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    • 100 $13.04
    • 1000 $13.04
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    Find more 88N30P price and stock on Findchips.com

    88N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    88N30P

    Abstract: A220D 88N30
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original     		PDF 88N30P O-247 88N30P A220D 88N30

    88N30

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P = 300 V = 88 A ≤ 40 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 88N30P O-247 88N30P 88N30

    88N30

    Abstract: IXTH88N30P DSA003702
    Text: IXTH 88N30P IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 88N30P 88N30P O-247 O-247 O-264 IXTH88N30P 88N30 DSA003702

    88n30p

    Abstract: 88N30 IXTQ88N30P
    Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 = 300 V = 88 A Ω = 40 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR


    Original     		PDF 88N30P 88N30P O-247 O-264 88N30 IXTQ88N30P

    88N30

    Abstract: 88N30P
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 88N30P O-247 88N30 88N30P

    88N30

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 88N30P 88N30P O-247 O-264 88N30

    88N30

    Abstract: 88N30P
    Text: IXTH 88N30P IXTT 88N30P PolarHTTM Power MOSFET RDS on VDSS = 300 ID25 = 88 Ω = 40 mΩ V A N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM 300


    Original     		PDF 88N30P O-247 88N30 88N30P

    88N30P

    Abstract: 88N30 IXTQ88N30P ixth IXTH88N30P
    Text: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V Maximum Ratings VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 88N30P O-247 88N30P 88N30 IXTQ88N30P ixth IXTH88N30P

    88N30P

    Abstract: IXTQ88N30P 88N30
    Text: Advanced Technical Information IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 88N30P O-264 88N30P IXTQ88N30P 88N30

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP