SM81600E
Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
SM81600E
IS42SM16800E-7TLI
IS42SM32400E-7T
IS42SM16800E-7BLI
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Untitled
Abstract: No abstract text available
Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1
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CMS4A16LAx
8Mx16)
160ns
350uA
400uA
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Untitled
Abstract: No abstract text available
Text: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits
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128MB
168PIN
PC100
TS16MLS64V8C2
TS16MLS64V8C2
PC-100
8Mx16
400mil
168-pin
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IS42VM81600E
Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42VM81600E
IS42VM16800E
IS42VM32400E
IS45VM81600E
IS45VM16800E
IS45VM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
IS42VM32400E-75TL
IS42VM16800E-75BLI
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HYM71V8635ALT6-H
Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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8Mx64
PC133
8Mx16
HYM71V8635AT6
8Mx64bits
8Mx16bits
400mil
54pin
168pin
HYM71V8635ALT6-H
HYM71V8635ALT6-K
HYM71V8635AT6-H
HYM71V8635AT6-K
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K4S28163LD
Abstract: K4S28163
Text: Mobile SDRAM VDD 2.5V, VDDQ 1.8V & 2.5V K4S28163LD-RG(S) Preliminary CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 85°C Operation) Revision 0.6 October 2001 Rev. 0.6 Oct. 2001 Mobile SDRAM (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S28163LD-RG(S) Preliminary
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K4S28163LD-RG
8Mx16
128Mb
PC133,
PC100,
200us.
K4S28163LD
K4S28163
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Untitled
Abstract: No abstract text available
Text: M463L0914DT0 172pin DDR Micro SODIMM 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM 172pin Micro DIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.0 Dec. 2001 M463L0914DT0 172pin DDR Micro SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release
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M463L0914DT0
172pin
8Mx64
8Mx16
64-bit
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da53
Abstract: DB26
Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any
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8Mx16/18x4i)
DL0117-010
da53
DB26
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Untitled
Abstract: No abstract text available
Text: 16Mx72 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T6 Series DESCRIPTION The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
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16Mx72
PC100
8Mx16
HYM71V16M755HC
16Mx72bits
8Mx16bits
400mil
54pin
144pin
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sdram cmos
Abstract: No abstract text available
Text: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).
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K4S28163LD-RF/R
8Mx16
54CSP
128Mb
133MHz,
100MHz,
66MHz.
K4S28163LD-RG/SXX
K4S28163LD-RF/RXX
sdram cmos
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HY5DV281622DT-4
Abstract: No abstract text available
Text: HY5DV281622DT 128M 8Mx16 DDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003
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HY5DV281622DT
8Mx16)
HY5DV281622DT-4/5/6
HY5DV281622DT-33/36
400mil
66pin
HY5DV281622DT-4
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Untitled
Abstract: No abstract text available
Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635HCT6 Series DESCRIPTION The Hynix HYM71V8635HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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8Mx64
PC133
8Mx16
HYM71V8635HCT6
8Mx64bits
8Mx16bits
400mil
54pin
168pin
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HY5DV
Abstract: No abstract text available
Text: HY5DV281622DTP 128M 8Mx16 DDR SDRAM HY5DV281622DTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DV281622DTP
8Mx16)
HY5DV281622
728-bit
8Mx16
400mil
HY5DV
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Untitled
Abstract: No abstract text available
Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119
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WED3DL328V
8Mx32
WED3DL328V
4x2Mx32.
8Mx16
133MHz,
125MHz
100MHz52
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Untitled
Abstract: No abstract text available
Text: SM564083574NZ3R January 11, 2002 Orderable Part Numbers Module Part Number SM564083574NZ3R Description 8Mx64 64MB , SDRAM, 144-pin SODIMM Unbuffered, 8Mx16 Based, CL3, PC133 Revision History • January 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM564083574NZ3R
8Mx64
144-pin
8Mx16
PC133
64MByte
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100MHZ
Abstract: 133MHZ 8MX32 WED3DL328V
Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer
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WED3DL328V
8Mx32
WED3DL328V
4x2Mx32.
8Mx16
133MHZ,
125MHZ
100MHZ
100MHZ
133MHZ
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Untitled
Abstract: No abstract text available
Text: K4S28163LD-R B F/R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)F/R CMOS SDRAM 2M x 16Bit x 4 Banks Mobile sDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.
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K4S28163LD-R
8Mx16
54CSP
16Bit
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HYM71V16M655BT6-P
Abstract: HYM71V16M655BT6-S HYM71V16655BT6 HYM71V16M655BLT6-8 HYM71V16M655BLT6-P HYM71V16M655BLT6-S
Text: 16Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16655BT6 Series Preliminary DESCRIPTION The Hynix HYM71V16655BT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits
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16Mx64
PC100
8Mx16
HYM71V16655BT6
16Mx64bits
8Mx16bits
400mil
54pin
168pin
HYM71V16M655BT6-P
HYM71V16M655BT6-S
HYM71V16M655BLT6-8
HYM71V16M655BLT6-P
HYM71V16M655BLT6-S
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VDAAA2404
Abstract: No abstract text available
Text: V-Data VDAAA2404 PC-100/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDAAA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil
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VDAAA2404
PC-100/CL2
8Mx64bits
8Mx16,
VDAAA2404
8Mx64
8Mx16
400mil
54pin
168pin
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B6666RB
Abstract: VDABA2404
Text: V-Data VDABA2404 PC-133/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDABA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil
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VDABA2404
PC-133/CL2
8Mx64bits
8Mx16,
VDABA2404
8Mx64
8Mx16
400mil
54pin
168pin
B6666RB
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K1B2816
Abstract: No abstract text available
Text: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length
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K1B2816B6M
8Mx16
K1B2816
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Untitled
Abstract: No abstract text available
Text: KMM366S924TS PC100 Unbuffered DIMM Revision History Revision 0.1 Jun. 14, 1999 - Changed "Detail C" in PCB Dimension and eliminated misprinted heat sink. Rev. 0.1 Jun. 1999 PC100 Unbuffered DIMM KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM366S924TS
PC100
KMM366S924TS
8Mx64
8Mx16,
400mil
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Untitled
Abstract: No abstract text available
Text: M368L0914BT1 184pin Unbuffered DDR SDRAM MODULE 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.6 June. 2000 - -1 - Rev. 0.6 June. 2000 M368L0914BT1 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L0914BT1
184pin
8Mx64
8Mx16
64-bit
133Mhz)
133Mhz/266Mbps
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Untitled
Abstract: No abstract text available
Text: K1S28161CM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter
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K1S28161CM
8Mx16
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