memoire
Abstract: RAM EDAC SEU 350Krad
Text: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1
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8Kx16
memoire
RAM EDAC SEU
350Krad
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krad
Abstract: 67025E TM1019 RAM SEU
Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
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8Kx16
50Krad
10Krad
35Krad
NT94055,
9849/92/NL,
krad
67025E
TM1019
RAM SEU
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Untitled
Abstract: No abstract text available
Text: ENERGY METER: Embedded DSP AFE Embedded dspConverters AD73560 AD73560 8/9/01 40 80 2:11 PM AD73360 AD73360 ADSP2185L ADSP2185L 52 52 19 19 16.7 to 26 16.7 to 26 8Kx24 16Kx24 Ed Grokulsky 8Kx16 16Kx16 Rev-4 12/03/00 YES YES YES YES YES YES A A 119 BGA 119 BGA
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AD73560
AD73360
ADSP2185L
8Kx24
16Kx24
8Kx16
16Kx16
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DSP56116
Abstract: DSP56166 8Kx16 XC56166FE fully differential opamp
Text: MOTOROLA DSP Division DSP56166 - Rev. E17T XC56166FE E17T Silicon Enhancement Issue date: April 28th 1994 This information constitutes manual errata The following enhancements have been made from the E52N silicon to the E17T silicon: 1- Increased PROM size from 8Kx16 to 12Kx16
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DSP56166
XC56166FE
8Kx16
12Kx16
DSP56116
fully differential opamp
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TAG10_
Abstract: tag12 TAG13 8kx16bit
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8K x 16 Configuration – 14 Common I/O TAG Bits – 2 Separate I/O Status Bits (VLD and DTY) • Optimized for 256KB cache and 4GB cacheable space
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8Kx16-BIT)
IDT71V218
256KB
10/12/15ns
48-pin
IDT71V218
200mV
71V218
SO48-1)
TAG10_
tag12
TAG13
8kx16bit
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TAG12
Abstract: TAG10_ tag13 8kx16bit cache tag Static RAM
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8K x 16 Configuration – 14 Common I/O TAG Bits – 2 Separate I/O Status Bits (VLD and DTY) • Optimized for 256KB cache and 4GB cacheable space
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8Kx16-BIT)
IDT71V218
256KB
10/12/15ns
48-pin
IDT71V218
200mV
71V218
SO48-1)
TAG12
TAG10_
tag13
8kx16bit
cache tag Static RAM
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8Kx16
Abstract: TM1019
Text: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port
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8Kx16
NT94055,
9849/92/NL,
TM1019
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8kx16bit ram
Abstract: 8kx16bit trz a7
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8K x 16 Configuration – 14 Common I/O TAG Bits – 2 Separate I/O Status Bits (VLD and DTY) • Optimized for 256KB cache and 4GB cacheable space
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8Kx16-BIT)
IDT71V218
256KB
10/12/15ns
48-pin
IDT71V218
200mV
71V218
SO48-1)
8kx16bit ram
8kx16bit
trz a7
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Untitled
Abstract: No abstract text available
Text: TMS320F28030, TMS320F28031, TMS320F28032 TMS320F28033, TMS320F28034, TMS320F28035 SPRS584F – APRIL 2009 – REVISED OCTOBER 2011 www.ti.com Piccolo Microcontrollers Check for Samples: TMS320F28030, TMS320F28031, TMS320F28032, TMS320F28033, TMS320F28034, TMS320F28035
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TMS320F28030,
TMS320F28031,
TMS320F28032
TMS320F28033,
TMS320F28034,
TMS320F28035
SPRS584F
TMS320F28032,
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encoder 200 43
Abstract: TMS320x2806x
Text: TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066 TMS320F28065, TMS320F28064, TMS320F28063, TMS320F28062 SPRS698B – NOVEMBER 2010 – REVISED JULY 2011 www.ti.com Piccolo Microcontrollers Check for Samples: TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066,
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TMS320F28069,
TMS320F28068,
TMS320F28067,
TMS320F28066
TMS320F28065,
TMS320F28064,
TMS320F28063,
TMS320F28062
SPRS698B
encoder 200 43
TMS320x2806x
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Untitled
Abstract: No abstract text available
Text: TinyPowerTM A/D Type with LCD 8-Bit OTP MCU HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 Revision: V1.40 Date: ���������������� October 31, 2013 HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 TinyPowerTM A/D Type with LCD 8-Bit OTP MCU
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HT56R62/HT56R65
HT56R642/HT56R644/HT56R654/HT56R656
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Untitled
Abstract: No abstract text available
Text: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM
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HT67F30/HT67F40/HT67F50/HT67F60
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MCF5271EC
Abstract: AN1259 MCF5270 MCF5271 MCF5271RM f7 69
Text: Freescale Semiconductor Hardware Specification Document Number: MCF5271EC Rev. 2, 08/2006 MCF5271 Integrated Microprocessor Hardware Specification by: Microcontroller Division The MCF5271 family is a highly integrated implementation of the ColdFire family of reduced
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MCF5271EC
MCF5271
MCF5270
MCF5270.
MCF5271EC
AN1259
MCF5271RM
f7 69
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EPD3330
Abstract: 614k EM65168 SEG80
Text: EPD3330 RISC II Series Microcontroller Product Specification DOC. VERSION 2.5 ELAN MICROELECTRONICS CORP. January 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation ELAN and ELAN logo
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EPD3330
EPD3330
614k
EM65168
SEG80
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elcon b 10k resistor
Abstract: elan touch stylus EPH3600 tr2c 614k 0X00 elan touch pad elcon b 100k resistor D2089
Text: EPH3600 RISC II Series Microcontroller Product Specification DOC. VERSION 0.1 ELAN MICROELECTRONICS CORP. October 2007 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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EPH3600
elcon b 10k resistor
elan touch stylus
EPH3600
tr2c
614k
0X00
elan touch pad
elcon b 100k resistor
D2089
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bq 8050
Abstract: 614k R33h 1838 ir receiver SE 7889 ic 8050
Text: ePG3231 RISC II-2G Series Microcontroller Product Specification DOC. VERSION 2.5 ELAN MICROELECTRONICS CORP. November 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation
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ePG3231
ma100
QFP-128L
QFP128
POD-035
ePG3231
bq 8050
614k
R33h
1838 ir receiver
SE 7889
ic 8050
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NC-206 32.768kHz
Abstract: EPD8000 QFP208 lvdi q elcon 233082
Text: EPD8000 TM ELAN RISC II Series Product Specification DOC. VERSION 2.2 ELAN MICROELECTRONICS CORP. October 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation ELAN and ELAN logo
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EPD8000
NC-206 32.768kHz
EPD8000
QFP208
lvdi q
elcon
233082
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Untitled
Abstract: No abstract text available
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors :JÖi'Np Jdt) PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8K x 16 Configuration - 14 Common I/O TAG Bits - 2 Separate I/O Status Bits (VLD and DTY) • Optimized for 256KB cache and 4GB cacheable space
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OCR Scan
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8Kx16-BIT)
IDT71V218
256KB
48-pin
8Kx16
200mV
71V218
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pin diagram of IC 74LS373
Abstract: No abstract text available
Text: M IC R O N MT56C0816 CACHE DATA SRAM DUAL 4Kx16 SRAM, SINGLE 8Kx16 SRAM CONFIGURABLE CACHE DATA SR A M FEATURES • O perates as two 4K x 16 SRAM s with common ad dresses and data; also configurable as a single 8K x 16 SRAM • Built-in input ad dress latches
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OCR Scan
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PDF
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MT56C0816
4Kx16
8Kx16
52-Pin
MT56C
pin diagram of IC 74LS373
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Untitled
Abstract: No abstract text available
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8 K x 16 C onfiguration - 14 Com m on I/O TAG Bits - 2 Separate I/O Status Bits (VLD and DTY) • O ptim ized for 256KB cache and 4G B cacheable space
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OCR Scan
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PDF
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8Kx16-BIT)
IDT71V218
256KB
48-pin
IDT71V2NOT
ro-we-2070
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8kx16bit ram
Abstract: No abstract text available
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8 K x 16 C onfiguration - 14 Com m on I/O TAG Bits - 2 Separate I/O Status Bits (VLD and DTY) • O ptim ized for 256KB cache and 4G B cacheable space
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OCR Scan
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3V128K
8Kx16-BIT)
IDT71V218
256KB
-10/12/15ns
48-pin
MO-118,
/15/W
727-fUÂ
8kx16bit ram
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SE012
Abstract: 00000000ED SE012 diagram EM- 546
Text: UM5238 4-Bit Microcontroller with 32 Sec. Voice Synthesizer, LCD Driver and PSG Preliminary Features • ■ ■ ■ ■ m ■ ■ ■ ■ ■ ■ ■ 4-bit parallel processing ALU com patible w ith UM6610 8Kx16 bits program ROM bank switchable 128x 4 bits data RAM
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OCR Scan
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UM5238
UM6610
8Kx16
768KHz
122ns
SEG13
SEG12
SE012
00000000ED
SE012 diagram
EM- 546
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Untitled
Abstract: No abstract text available
Text: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8K x 16 Configuration - 14 Com m on I/O TA G Bits - 2 S eparate I/O Status Bits (VLD and D TY) • Optim ized for 256K B cache and 4G B cacheable space
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OCR Scan
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PDF
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8Kx16-BIT)
IDT71V218
48-pin
IDT71V21B
8Kx16
4A25771
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7278S/L Features 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture * processor communications; interrupt option Interrupt flags with programmable masking
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OCR Scan
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IDT70V7278S/L
100-pin
16-bit
eac16
MO-136,
492-M
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