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    8M16 Search Results

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    8M16 Price and Stock

    Micron Technology Inc MT41K128M16JT-125-AUT:K-TR

    IC DRAM 2GBIT PARALLEL 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT41K128M16JT-125-AUT:K-TR Cut Tape 3,779 1
    • 1 $7.17
    • 10 $6.365
    • 100 $5.6497
    • 1000 $5.0123
    • 10000 $5.0123
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    Alliance Memory Inc AS4C8M16SA-6TIN

    IC DRAM 128MBIT PAR 54TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS4C8M16SA-6TIN Tray 3,215 1
    • 1 $2.97
    • 10 $2.769
    • 100 $2.6455
    • 1000 $2.4375
    • 10000 $2.4375
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    TME AS4C8M16SA-6TIN 407 1
    • 1 $4.32
    • 10 $4.1
    • 100 $3.49
    • 1000 $2.73
    • 10000 $2.73
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    Karl Kruse GmbH & Co KG AS4C8M16SA-6TIN 173,249
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    New Advantage Corporation AS4C8M16SA-6TIN 83 1
    • 1 -
    • 10 -
    • 100 $4.09
    • 1000 $4.09
    • 10000 $4.09
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    Micron Technology Inc MT41K128M16JT-125-XIT:K

    IC DRAM 2GBIT PARALLEL 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT41K128M16JT-125-XIT:K Tray 2,792 1
    • 1 $9.91
    • 10 $9.206
    • 100 $8.56363
    • 1000 $8.04845
    • 10000 $7.74868
    Buy Now

    Alliance Memory Inc AS4C128M16D3LC-12BCN

    IC DRAM 2GBIT PARALLEL 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS4C128M16D3LC-12BCN Tray 1,739 1
    • 1 $8.2
    • 10 $7.626
    • 100 $7.27275
    • 1000 $6.47485
    • 10000 $6.47485
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    Karl Kruse GmbH & Co KG AS4C128M16D3LC-12BCN 223,562
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    New Advantage Corporation AS4C128M16D3LC-12BCN 350 1
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    • 1000 $8.34
    • 10000 $8.34
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    Micron Technology Inc MT41K128M16JT-107:K

    IC DRAM 2GBIT PAR 96FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT41K128M16JT-107:K Bulk 1,207 1
    • 1 $2.89
    • 10 $2.695
    • 100 $2.4966
    • 1000 $2.35834
    • 10000 $2.28274
    Buy Now
    Ameya Holding Limited MT41K128M16JT-107:K 30,000
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    Avnet Asia MT41K128M16JT-107:K 8 Weeks 2,000
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    • 10000 $1.8481
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    Avnet Silica MT41K128M16JT-107:K 18,360 13 Weeks 1,224
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    EBV Elektronik MT41K128M16JT-107:K 8,568 22 Weeks 1,224
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    New Advantage Corporation MT41K128M16JT-107:K 4,601 1
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    • 10000 $5.04
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    Win Source Electronics MT41K128M16JT-107:K 18,860
    • 1 -
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    • 100 $1.798
    • 1000 $1.508
    • 10000 $1.508
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    8M16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8M16

    Abstract: HSP061-8M16 18055 QFN-16L DSASW003741
    Text: HSP061-8M16 8-line ESD protection for high speed lines Features • ultralarge bandwidth: 6.3 GHz ■ ultralow capacitance: 0.6 pF ■ low time domain reflection ■ low leakage current: 100 nA at 25 °C ■ extended operating junction temperature range: -40 °C to 150 °C


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    HSP061-8M16 QFN-16L 8M16 HSP061-8M16 18055 QFN-16L DSASW003741 PDF

    Untitled

    Abstract: No abstract text available
    Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C


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    HSP061-8M16 QFN-16L PDF

    Untitled

    Abstract: No abstract text available
    Text: HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: • HDMI 1.3 and 1.4 • Digital Video Interface


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    HSP061-8M16 HSP061-8M16 QFN-16L DocID18055 PDF

    Untitled

    Abstract: No abstract text available
    Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C


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    HSP061-8M16 QFN-16L HSP061-8M16 PDF

    "flow meter"

    Abstract: No abstract text available
    Text: LL Roots Flow Meter Model LL Roots flow meter is a kind of volumetric instrument used to measure the volume flow of the fluid in enclosed pipes. It can provide on-site display of accumulated flow; when being coupled with photoelectron pulse converter and flow totalizer through transmission output


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    LPJ-12D LPJ-12D/FI "flow meter" PDF

    micron lpddr

    Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
    Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum 8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


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    128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged PDF

    256mb ddr333 200 pin

    Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


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    128Mb: DDR333 MT46V32M4 MT46V16M8 MT46V8M16 256Mb: 256mb ddr333 200 pin A11 MARKING CODE mark DM 8M16 DDR200 DDR266 MT46V16M8 MT46V32M4 MT46V8M16 PDF

    A11 MARKING CODE

    Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks 8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks 8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


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    128Mb: PC100- PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 128MSDRAM PDF

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


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    128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG X 4 X 4 BANKS MT46V16M8 – 4 MEG X 8 X 4 BANKS 8M16 – 2 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


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    128Mb: 09005aef8074a655 128MBDDRx4x8x16 PDF

    MT48V

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16, x32 MOBILE SDRAM SYNCHRONOUS DRAM 8M16LFFF, 8M16LFFF – 2 Meg x 16 x 4 banks MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


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    128Mb: 096-cycle -40oC MT48LC8M16LFFF, MT48V8M16LFFF 90-pin, 54-ball, MT48V PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM 8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


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    128Mb: 096-cycle 09005aef80c97015 PDF

    FBGA 63

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks 8M16 – 2 Meg x 16 x 4 Banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/sdram


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    128Mb: MT46V32M4 MT46V16M8 MT46V8M16 09005aef816fd013/Source: 09005aef816ce127 128MBDDRx4x8x16D FBGA 63 PDF

    SpecTek

    Abstract: S80016LK7TW-8A 8M16 54-PIN PC-100 54pin TSOP SDRAM PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM Features: • • • • • • • • • • • Intel PC-100 3-3-3 or PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be


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    128Mb: PC-100 PC133 096-cycle rankS80016LK7 S16008LK9 54-pin 60-ball PC100 SpecTek S80016LK7TW-8A 8M16 PC-100 54pin TSOP SDRAM PC133 registered reference design PDF

    TOP SIDE MARKING OF MICRON

    Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512
    Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM 8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz


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    128Mb/144Mb: MT6V8M16 MT6V8M18 18-bit) MT6V8M18F-3B MT6V8M18F-3C MT6V8M18F-4C 144MRDRAM TOP SIDE MARKING OF MICRON MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb: x16, x32 BAT-RAM LOW POWER SDRAM SYNCHRONOUS DRAM 8M16LFFC, 8M16LFFC – 2 Meg x 16 x 4 banks 8M16LFFF, 8M16LFFF, MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web


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    128Mb: 096-cycle -40oC MT48LC8M16LFFC, MT48V8M16LFFC MT48V8M16LFFC-8 MT48LC4M32LFFC-10 54-pin, 90-pin, PDF

    09005aef8091e66d

    Abstract: MT48LC16M8A2BB
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks 8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


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    128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB PDF

    75Z MARKING

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


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    128Mb: DDR333 256Mb: 128Mx4x8x16DDR333 75Z MARKING PDF

    BA 5053 circuit diagram

    Abstract: BA 5053
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


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    128Mb: 128Mx4x8x16DDR BA 5053 circuit diagram BA 5053 PDF

    MT46H8M16

    Abstract: 8M16 MT46H8M16LF
    Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • VDD/VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS


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    128Mb: MT46H8M16LF refresh08-368-3900 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF MT46H8M16 8M16 PDF

    DSA0046601.txt

    Abstract: AS4C8M16
    Text: 8M16S FEBRUARY 2011 128Mb/ 8M x 16 bit Synchronous DRAM SDRAM Alliance Memory Confidential Features Table1. Key Specifications • • • • • • 8M16S tCK3 Clock Cycle time(min.) tAC3 Access time from CLK(max.) • • • • • • Fast access time from clock: 5/5.4 ns


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    AS4C8M16S 128Mb/ 16-bit cycles/64ms 54-pin AS4C8M16S AS4C8M16S-6TCN AS4C8M16S-6TIN AS4C8M16S-7TCN DSA0046601.txt AS4C8M16 PDF

    MB81416-12

    Abstract: MB81416 mb81416-10 MB81416-15
    Text: FUJITSU „ lit, M B 81416-10 M ICROELECTRONICS. INC. M B 8M16-12 " HityQLCc. MB81416-15 16,384 WORD BY 4-BIT NMOS DYNAMIC RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MB81416 is a fu lly decoded, dynam ic NMOS random access memory organized as 16384 w ords by 4-bits. The de­


    OCR Scan
    MB81416-15 MB81416 18-pin MB81416-12 mb81416-10 PDF

    EE-19

    Abstract: 8M16 MT48LC16M8A2 MT48LC16M8A2TG-8E MT48LC32M4A2 MT48LC8M16A2 ck cl v2a
    Text: SYNCHRONOUS DRAM M T48LC 32M 4A 2- 8 Meg x 4 x 4 banks M T48LC 16M 8A 2- 4 Meg x 8 x 4 banks 8M16A2 -2 Meg x 16 x 4 banks For the latest data sheet, please re fe r to the M icron Web site: w w w ,m icron .com lm ti/m sp lhim lfd a tsshe ei.h im i FEATURES


    OCR Scan
    MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC66-, PC100- PC133-compliant 096-cycle 128Mb: 128MSDRAM EE-19 8M16 MT48LC16M8A2TG-8E ck cl v2a PDF