ELXY
Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz
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Original
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NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
ELXY
npt1010b
18121C105KAT2A
ATC100B101J
6010LM
91292A012
ATC100B150J
12061C103KAT2A
NITRON
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in
|
Original
|
NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
NDS-023
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in
|
Original
|
NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
NDS-023
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in
|
Original
|
NPT1010
2000MHz
900MHz
500-1000MHz
EAR99
900MHz)
700mA,
NDS-023
|
PDF
|
