00107
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146E
44-pin
00107
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CY62157EV30LL-45BVXI
Abstract: TSOP 48 thermal resistance
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
CY62157EV30LL-45BVXI
TSOP 48 thermal resistance
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AN1064
Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
Text: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This
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CY62126EV30
CY62126EV30
AN1064
CY62126DV30
CY62126EV30LL-45BVXI
CY62126EV30LL-45ZSXI
CY62126EV30LL-55BVXE
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146E
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62126EV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C
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CY62126EV30
CY62126DV30
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE
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CY62146E
I/O15)
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AN1064
Abstract: CY62157DV30 CY62157EV30
Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C
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CY62157EV30
CY62157DV30
AN1064
CY62157DV30
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925501
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
CY62146DV30
48-ball
44-pin
925501
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down
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CY62146EV30
CY62146DV30
48-ball
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62126EV30
I/O15)
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AMP 59974-1 crimper
Abstract: AMP 90277-1 amp 825590-3 90277-1 ferrule crimper pull test 734536-1 AMP 47387 crimper AMP junior power timer contact 734535-1 654149-1
Text: TYCO ELECTRONICS TECHNOLOGY PORTFOLIO Connector Systems / Electromechanical Components Circuit Protection Devices Magnetics Wireless Components Racks and Panels Antennas, GPS Antennas, Integrated Antenna Systems Touch Screens Resistors and Inductors Printed Circuit Board
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down
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CY62146EV30
CY62146DV30
48-ball
44-pin
727-CY46EV30LL45ZSXI
CY62146EV30LL-45ZSXI
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CY62146EV30LL-45ZSXI
Abstract: CY62146EV30 CY62146EV30LL CY62146DV30
Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through
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CY62146EV30
CY62146DV30
48-ball
CY62146EV30LL-45ZSXI
CY62146EV30LL
CY62146DV30
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AN1064
Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly
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CY62147EV30
48-pin
AN1064
CY62147DV30
CY62147EV30LL
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AN1064
Abstract: CY62157E CY62157ELL
Text: CY62157E MoBL 8-Mbit 512K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input
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CY62157E
AN1064
CY62157ELL
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Untitled
Abstract: No abstract text available
Text: CY62157E MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device
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CY62157E
I/O15)
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1063-000-N090
Abstract: k3313 a00a UG 1412 U UG-573 1016-031-N593 1601-079-N001 M39012-01 MIL-PRF-55339 1008-100-N005
Text: Design Features RF Coaxial Connectors CD Catalog Volume 6 ISO9001:2000 Certified Click here for Navigation Guide Click here for Table of Contents Click here for Index by P/N Hundreds of new products inside, including: • 1.0/2.3 • BMA • E-Line Brass SMA
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ISO9001
MIL-PRF-39012
FC-CD2007
1063-000-N090
k3313
a00a
UG 1412 U
UG-573
1016-031-N593
1601-079-N001
M39012-01
MIL-PRF-55339
1008-100-N005
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Untitled
Abstract: No abstract text available
Text: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description Very high speed: 45 ns Temperature ranges ❐ Industrial: –40 °C to +85 °C • Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62147DV30
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CY62147EV30
CY62147DV30
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VDR 0047
Abstract: AN1064 CY62146E
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)
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CY62146E
VDR 0047
AN1064
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AN1064
Abstract: CY62157DV30 CY62157EV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa
Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features • TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM ■ High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C
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CY62157EV30
CY62157DV30
48-Ball
44-Pin
AN1064
CY62157DV30
CY62157EV30LL-55ZXE
CY62157EV30Ll-45zxa
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CY62146EV30LL-45ZSXI
Abstract: CY62146DV30 CY62146EV30 CY62146EV30LL 925501
Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through
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CY62146EV30
CY62146DV30
48-ball
CY62146EV30LL-45ZSXI
CY62146DV30
CY62146EV30LL
925501
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Untitled
Abstract: No abstract text available
Text: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
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CY62147EV30
CY62147DV30
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