IRG7PH46UDPBF
Abstract: 028005
Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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7498A
IRG7PH46UDPbF
IRG7PH46UD-EP
O-247AD
028005
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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AN-994
Abstract: AUIRLR3410 IRL530N
Text: PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
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AUIRLR3410
AN-994
AUIRLR3410
IRL530N
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9749
Abstract: No abstract text available
Text: Product sheet Subminiature connectors Product Area Male socket, dip solder termination Snap-in connectors IP 40 Pole Article number serie 709/719 illustration scale drawing Contact Arrangement Installation instructions / Mounting cutout 3 09 9749 20 03 Item description
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Untitled
Abstract: No abstract text available
Text: PD - 97493B IRFH6200PbF HEXFET Power MOSFET VDS 20 V RDS on max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits
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97493B
IRFH6200PbF
IRFH6200TRPBF
IRFH6200TR2PBF
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ir1f
Abstract: 10MQ040N 10MQ100N 2f marking code 036 marking diode ir1f 10MQ060N 15MQ040N 9749 1F marking
Text: SMA PART MARKING PART NUMBER EXAMPLES Example: 10MQ040N INTERNATIONAL RECTIFIER IDENTIFICATION PART NUMBER IR1F 9749 CATHODE BAND SIDE 1F = 10MQ040N 1H = 10MQ060N 1J = 10MQ100N 2F = 15MQ040N DATE CODE YYWW YY = YEAR WW = WEEK
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10MQ040N
10MQ060N
10MQ100N
15MQ040N
ir1f
10MQ040N
10MQ100N
2f marking code
036 marking
diode ir1f
10MQ060N
15MQ040N
9749
1F marking
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Untitled
Abstract: No abstract text available
Text: PD - 97493 IRFH6200PbF HEXFET Power MOSFET VDS 20 V RDS on max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits
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IRFH6200PbF
IRFH6200TRPBF
IRFH6200TR2PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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7490A
IRFH5210PbF
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low frequency inverter
Abstract: MIL-HDBK-263
Text: PD - 97497 IRG7CC20FB Features Low VCE on 3µs Short Circuit Capability Square RBSOA C 600V IC(nom)=12A VCE(on) typ.=1.6V @ IC(nom) @ 25°C Short Circuit Rated 150mm Wafer Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance
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IRG7CC20FB
150mm
low frequency inverter
MIL-HDBK-263
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MIL-HDBK-263
Abstract: No abstract text available
Text: PD - 97496 IRG7CC12FB Features Low VCE on 3µs Short Circuit Capability Square RBSOA C 600V IC(nom)=8.0A VCE(on) typ.=1.6V @ IC(nom) @ 25°C Short Circuit Rated 150mm Wafer Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance
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IRG7CC12FB
150mm
MIL-HDBK-263
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Prescaler
Abstract: No abstract text available
Text: May 26, 1998 Errata Sheet Revision 2.1 Date Code s : Known Issues: 9747, 9749, 9750, 9810, 9811, 9812 1. With Vpp > 13V, chips will be damaged in both serial or parallel programming modes Fix: Avoid applying Vpp > 12.5V, latest version of SX-Key hardware tested at
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100kHz
100msec
Prescaler
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thermistor SCK 056 NTC
Abstract: SCK 2r58 SCK 037 SCK-075 sck 057 SCK056 sck 056 thermistor SCK 057 SCK 164 SCK-154
Text: THINKING THINKING THINKING THINKING NTC POWER THERMISTOR E 138827 ® LR 97495 Ł POWER DERATING CURVE 15Ø SERIES Ł SPECIFICATION Part No Zero Power Resistance at 25˚C Ω SCK-1R38 SCK-1R58 SCK-2R58 SCK-037 SCK-046 SCK-048 SCK-056 SCK-057 SCK-065 SCK-075
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SCK-1R38
SCK-1R58
SCK-2R58
SCK-037
SCK-046
SCK-048
SCK-056
SCK-057
SCK-065
SCK-075
thermistor SCK 056 NTC
SCK 2r58
SCK 037
SCK-075
sck 057
SCK056
sck 056
thermistor SCK 057
SCK 164
SCK-154
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IRG7PH46UDPBF
Abstract: 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150
Text: PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PH46UDPbF
IRG7PH46UD-EP
O-247AD
IRG7PH46UDPBF
600v 20a IGBT driver
igbt 40A 600V
P channel 600v 20a IGBT
C-150
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IRFH6200TR2PBF
Abstract: IRFH6200TRPBF AN-1154 IRFH62 PQFN footprint
Text: PD - 97493A IRFH6200PbF HEXFET Power MOSFET VDS 20 V RDS on max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits
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Original
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7493A
IRFH6200PbF
IRFH6200TRPBF
IRFH6200TR2PBF
IRFH6200TR2PBF
IRFH6200TRPBF
AN-1154
IRFH62
PQFN footprint
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Untitled
Abstract: No abstract text available
Text: 112TW1-70E Page 1 112TW1-70 E Home : Products : TW » Switches » MICRO SWITCH Toggle Switches Search Products Controls Monitoring and Lighting ( 352) Machine Safety (1701) Sensors (6224 ) Switches ( 9749) Wireless (21) Technology Electromechanical (9301 )
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112TW1-70E
112TW1-70
XYR6000
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Untitled
Abstract: No abstract text available
Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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Original
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7498A
IRG7PH46UDPbF
IRG7PH46UD-EP
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRLR3410
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TSOP Type II
Abstract: 9749 cel 9200 140C 8361H JESD22 Cypress 44LD
Text: Cypress Semiconductor Qualification Report QTP# 97491, Version 1.0 March, 1998 44 Ld TSOP Type II OSE, Taiwan Assembly Cypress Semiconductor Assembly: OSE, Taiwan Assembly Package: 44Ld TSOP Type II QTP# 97491, V. 1.0 2 of 4 March, 1998 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
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8361H
JESD22-A112
CY7C1021-ZSC
619708844L
619708845L
TSOP Type II
9749
cel 9200
140C
8361H
JESD22
Cypress
44LD
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9749
Abstract: No abstract text available
Text: February 20, 1998 Errata Sheet for SX Silicon Revision 2.1 Date Code s : Known Issues: 9747, 9749, 9750 1. With Vpp > 13V, chips will be damaged in both serial or parallel programming modes Fix: Avoid applying Vpp > 12.5V, latest version of SX-Key hardware tested at
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Original
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100msec
9749
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PDF
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MIL-HDBK-263
Abstract: No abstract text available
Text: PD - 97494 IRG7CC10FB Features Low VCE on 3µs Short Circuit Capability Square RBSOA C Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI G E 600V IC(nom)=5.0A VCE(on) typ.=1.6V @ IC(nom) @ 25°C
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IRG7CC10FB
150mm
MIL-HDBK-263
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97493C IRFH6200PbF HEXFET Power MOSFET V DS 20 V R DS on max 1.20 m Qg (typical) 155 nC R G (typical) 1.3 (@VGS = 4.5V) ID (@Tmb = 25°C) 100 h PQFN 5X6 mm A Applications •Charge and discharge switch for battery application Load switch for 12V (typical) bus
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97493C
IRFH6200PbF
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PQFN footprint
Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Text: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5210PbF
IRFH5210TRPBF
IRFH5210TR2PBF
PQFN footprint
diode marking 33a on semiconductor
IRFH5210TR2PBF
marking 33a on semiconductor
AN-1154
IRFH5210TRPBF
IRFH5210
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AUIRFR3504Z
Abstract: AUFR3504Z AN-994
Text: PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRFR3504Z
AUIRFR3504Z
AUFR3504Z
AN-994
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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AUIRFR3504Z
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