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    APT1001RSVR Search Results

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    APT1001RSVR Price and Stock

    Microchip Technology Inc APT1001RSVRG

    MOSFET N-CH 1000V 11A D3PAK
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    DigiKey APT1001RSVRG Tube 40
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    Avnet Americas APT1001RSVRG Tube 26 Weeks 40
    • 1 $14.8372
    • 10 $14.8372
    • 100 $12.129
    • 1000 $12.3353
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    Mouser Electronics APT1001RSVRG
    • 1 $15.14
    • 10 $15.14
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    • 10000 $15.14
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    Verical APT1001RSVRG 26 3
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    • 10 $26.9014
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    Newark APT1001RSVRG Bulk 40
    • 1 $15.14
    • 10 $15.14
    • 100 $13.07
    • 1000 $12.29
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    Microchip Technology Inc APT1001RSVRG Tube 26 Weeks
    • 1 $15.14
    • 10 $15.14
    • 100 $13.07
    • 1000 $12
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    Onlinecomponents.com APT1001RSVRG
    • 1 -
    • 10 $14.67
    • 100 $12.44
    • 1000 $11.77
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    TME APT1001RSVRG 26 1
    • 1 $27.4
    • 10 $21.7
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    NAC APT1001RSVRG Tube 25
    • 1 $14.46
    • 10 $14.46
    • 100 $13.11
    • 1000 $11.99
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    Richardson RFPD APT1001RSVRG 40
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    • 100 $12.98
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    Avnet Silica APT1001RSVRG 28 Weeks 40
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    Master Electronics APT1001RSVRG
    • 1 -
    • 10 $14.67
    • 100 $12.44
    • 1000 $11.77
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    APT1001RSVR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1001RSVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT1001RSVR Microsemi Power MOS V MOSFET Original PDF
    APT1001RSVRG Microchip Technology MOSFET N-CH 1000V 11A D3PAK Original PDF

    APT1001RSVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT1001RSVR

    Abstract: No abstract text available
    Text: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT1001RSVR APT1001RSVR

    APT1001RSVR

    Abstract: No abstract text available
    Text: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original
    PDF APT1001RSVR APT1001RSVR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y APT1001RSVR 1000V 11A 1.0000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    PDF APT1001RSVR APT1001 MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: A P T 1001R S V R A dvanced W 7Æ P o w e r Te c h n o lo g y 1000v 11 a i.oooq POWER MOS V Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    PDF 1001R 1000v APT1001

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


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    PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A A P T 10 0 1 R S V R pow er Te c h n o lo g y " 1000v 11 a i.oooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF 1000v APT1001

    Untitled

    Abstract: No abstract text available
    Text: A P T 10 0 1 R S V R 1000v 11 a -i.ooon A dvanced W 7Æ P o w e r T e c h n o lo g y POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    PDF 1000v APT1001