BGY203
Abstract: SC09
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY203 UHF amplifier module Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 23 Philips Semiconductors Product specification UHF amplifier module BGY203 FEATURES PINNING - SOT342A
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BGY203
OT342A
BGY203
SC09
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bgy113f
Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE
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OT132B
BGY143
BGY132
BGY133
BGY135
to174
bgy113f
BGY113E
SOT321
RF Power Modules
BGY113G
BGY204
BGY113B
BGY133
SOT246
SOT342
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems PCF5075 FEATURES • CMOS low-voltage, low-power • Can be used in burst mode with power-down • Three-wire serial bus interface with the bus available in
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PCF5075
BGY203
MBE721
MBE720
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2-bit comparator
Abstract: PCF5075 SSOP20 BAS70-07
Text: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and
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PCF5075
Dat31
SCA53
437027/1200/03/pp28
2-bit comparator
PCF5075
SSOP20
BAS70-07
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smd diode schottky code marking nu
Abstract: 18Tcy diode marking BM8 18T marking
Text: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and
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PCF5075
PCF5075T/F2
PCF5075TDK-T
OT266
smd diode schottky code marking nu
18Tcy
diode marking BM8
18T marking
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ITT 2222 A
Abstract: ITT 2222 npn itt 2222 SOT342 2222861 BGY203 flange RF resistor 50 PHILIPS UHF AMPLIFIER MODULE LIST transistor tt 2222 TT 2222
Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY203 FEATURES DESCRIPTION • 6 V nominal supply voltage The BGY203 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit
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BGY203
OT342
BGY203
711002b
OT342.
ITT 2222 A
ITT 2222 npn
itt 2222
SOT342
2222861
flange RF resistor 50
PHILIPS UHF AMPLIFIER MODULE LIST
transistor tt 2222
TT 2222
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BGY203
Abstract: 180PF PCF5075 SSOP16 RF sensor MGC570 FEB279
Text: Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems CONTENTS 1 FEATURES 2 QUICK REFERENCE DATA 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING 6 FUNCTIONAL DESCRIPTION 6.2 6.2.1 6.2.2 6.3 6.4 6.4.1 6.4.2 6.4.3 6.5
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Untitled
Abstract: No abstract text available
Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
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C4382.
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BGY116a
Abstract: fo-57C BGY114E
Text: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and
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BGY110G
BGY95A
BGY95B
BGY96B
BGY114A
BGY114B
BGY114C
BGY114D
BGY114E
BGY116A
fo-57C
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m8918
Abstract: 2SB 731 GSM module BLOCK diagram BAS70-07 BGY203 PCF5075 PUF5075 F-5075
Text: Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5075 FEATURES • CMOS low-voltage, low-power • Can be used in burst mode with power-down • Three-wire serial bus interface with the bus available in power-down mode
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PCF5075
711062b
00cnb73
m8918
2SB 731
GSM module BLOCK diagram
BAS70-07
BGY203
PUF5075
F-5075
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BFG87
Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Text: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"
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SC08a
PCD3315A
PCD3343A
PCD3344A
PCD3346
PCD3347
PCD3348A
PCD3349A
PCD3350A
PCD3351A
BFG87
BSF17
BSF17W
Philips BFQ bipolar transistor
blt81 driver circuit
BGY46B
BFE505
T119 Transistor
BFQ43
bgy132
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ka band TR Limiter
Abstract: 180PF BAS70-07 PCF5075 RF sensor
Text: Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems PCF5075 FEATURES • CMOS low-voltage, low-power • Can be used in burst mode with power-down • Three-wire serial bus interface with the bus available in
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7110flSb
QCH55T7
ka band TR Limiter
180PF
BAS70-07
PCF5075
RF sensor
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