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    BGY113E Price and Stock

    Philips Semiconductors BGY113E

    UHF AMPLIFIER MODULE Narrow Band High Power Amplifier, 400MHz Min, 440MHz Max
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    ComSIT USA BGY113E 825
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    NXP Semiconductors BGY113E

    NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Frequency: 400 MHz; Maximum Input Power (CW): 7 dBm; Maximum Operating Temperature: 90 Cel;
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    Vyrian BGY113E 98
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    BGY113E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGY113E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

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    Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE


    Original     		OT132B BGY143 BGY132 BGY133 BGY135 to174 bgy113f BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342 PDF