schematic diagram motor control
Abstract: schematic diagram motor BUV298V JESD97
Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance
|
Original
|
BUV298V
2002/93/EC
schematic diagram motor control
schematic diagram motor
BUV298V
JESD97
|
PDF
|
BUV298V
Abstract: No abstract text available
Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:
|
Original
|
BUV298V
BUV298V
|
PDF
|
BUV298AV
Abstract: No abstract text available
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298AV
BUV298AV
|
PDF
|
BUV298AV
Abstract: No abstract text available
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298AV
BUV298AV
|
PDF
|
BUV298AV
Abstract: No abstract text available
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298AV
BUV298AV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance
|
Original
|
BUV298V
2002/93/EC
|
PDF
|
BUV298AV
Abstract: No abstract text available
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298AV
BUV298AV
|
PDF
|
welding equipment smps schematic
Abstract: No abstract text available
Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298V
welding equipment smps schematic
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298AV
|
PDF
|
welding rectifier schematic
Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
|
Original
|
BUV298AV
welding rectifier schematic
schematic diagram UPS
SMPS 30
smps circuit diagram
BUV298AV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance
|
Original
|
BUV298V
2002/93/EC
200ot
|
PDF
|
BUV298V
Abstract: No abstract text available
Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE
|
Original
|
BUV298V
BUV298V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.
|
OCR Scan
|
bbS3T31
DD2fl51E
BUV298
BUV298A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
BUV298V
048JO
|
PDF
|
|
|
sot-227a
Abstract: sot227a 298AV BUV298 BUV298A BUV298AV BUV298V
Text: bìE D N AMER PHILIPS/DISCRETE DDEÖ51E 47b • APX BUV298 V BUV298A(V) ■ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m o to r co n tro l applications on 220 V to 38 0 V mains supply.
|
OCR Scan
|
BUV298
BUV298A
sot-227a
sot227a
298AV
BUV298AV
BUV298V
|
PDF
|
BUV298A
Abstract: BUV298 T227A
Text: I I P H I L IP S INTERNATIONAL 4SE D E3 7 1 1 0 0 2 b 0 0 3 1 1 3 7 3 E3PHIN BUV298 V BUV298A(V) T-33-/S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.
|
OCR Scan
|
BUV298
BUV298A
T-33-/S
OT227B
298AIV)
typ2500
T227A
|
PDF
|
ad 303 transistor
Abstract: No abstract text available
Text: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
BUV298AV
SC04830
ad 303 transistor
|
PDF
|
tb rbb
Abstract: BUV298AF BUV298AV BUV298A
Text: 3DE ì> m 7RSt1237 QGBDMIM Ô • fZ 7 ^ 7# S G S -T H O M S O N sLTH0M i i N_ U V 2 9 8 A F [Rifln [^@[l[LllCT[^@lROD©S T - 3 3 - 1 5 BUV298AV NPN TRANSISTOR POWER MODULE ■ H IG H C U R R E N T P O W E R B IP O L A R M O D U L E ■ V E R Y L O W Rth J U N C T IO N C A S E
|
OCR Scan
|
7R2C1237
UV298AF
33-i5
BUV298AV
BUV298AV
BUV298AF
sc04s30
T-91-20
O-240)
tb rbb
BUV298AF
BUV298A
|
PDF
|
SOT-227A
Abstract: BUV298 BUV298A BUV298AV BUV298V
Text: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.
|
OCR Scan
|
711002b
BUV298
BUV298A
SOT-227A
BUV298AV
BUV298V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
BUV298V
|
PDF
|
IC SO5
Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
Text: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS
|
OCR Scan
|
JUV298F
BUV298V
BUV298V
BUV298F
SC04S30
T-91-20
O-240)
IC SO5
FOR TRANSISTOR BC 149 B
transistor Bc 287
R3315
BUV298F
JUV298F
transistor BC 583
|
PDF
|
Untitled
Abstract: No abstract text available
Text: / S T SGS-THOMSON c o r a m i * ! BUV298AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
BUV298AV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r = 7 ^ 7 S G S -T H O M S O N R m o ra « # BUV298V NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
BUV298V
|
PDF
|
BUV298CV
Abstract: No abstract text available
Text: r z 7 S G S - T H O M Ä 7# S O N B U V2 9 8 CV RfflOGIHimiCTMOSS NPN TRANSISTOR POWER MODULE ADVANCE DATA . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,hJUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
BUV298CV
5c04j4d
7T2T237
BUV298CV
|
PDF
|
