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    STMicroelectronics BUV298AV

    TRANS NPN 450V 50A ISOTOP
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    BUV298A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUV298A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298A Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV298AF STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV298AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298AV Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298AV Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV298AV Philips Semiconductors High Speed, High Voltage Transistors Scan PDF
    BUV298AV STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV298AV STMicroelectronics Shortform Data Book 1988 Short Form PDF

    BUV298A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV  NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    Untitled

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV

    welding rectifier schematic

    Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV welding rectifier schematic schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


    Original     		PDF O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


    Original     		PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI

    STE38NA50

    Abstract: STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV
    Text: TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. Conf. D A B A D B D D D D D D A A A C A C C B VCEO VCEV IC Ptot VCE sat @ IC / IB (V) (V) (A) (W) (V) (A) 125 125 125 300 300 300 300 450 450 450 450 450 450 450 450 450 450 450 450 450 150 200


    Original     		PDF STE250N06 STE180N10 STE150N10 STE100N20 STE90N25 STE50N40 STE53NA50 STE47N50 STE45N50 STE38NA50 STE38NA50 STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.


    OCR Scan     		PDF bbS3T31 DD2fl51E BUV298 BUV298A

    SOT-227A

    Abstract: BUV298A BUV298 BUV298AV BUV298V High-Current
    Text: N AflER L.'iE PHILIPS/DISCRETE D • bbS3T31 QQ2 Ö5 1 E 47b ■ BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated IS O T O P package; intended fo r use in inverters, converters and m o to r co n tro l ap p licatio n s on 22 0 V to 38 0 V m ains supply.


    OCR Scan     		PDF bbS3T31 BUV298 BUV298A SOT-227A BUV298AV BUV298V High-Current

    sot-227a

    Abstract: sot227a 298AV BUV298 BUV298A BUV298AV BUV298V
    Text: bìE D N AMER PHILIPS/DISCRETE DDEÖ51E 47b • APX BUV298 V BUV298A(V) ■ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m o to r co n tro l applications on 220 V to 38 0 V mains supply.


    OCR Scan     		PDF BUV298 BUV298A sot-227a sot227a 298AV BUV298AV BUV298V

    ad 303 transistor

    Abstract: No abstract text available
    Text: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298AV SC04830 ad 303 transistor

    tb rbb

    Abstract: BUV298AF BUV298AV BUV298A
    Text: 3DE ì> m 7RSt1237 QGBDMIM Ô • fZ 7 ^ 7# S G S -T H O M S O N sLTH0M i i N_ U V 2 9 8 A F [Rifln [^@[l[LllCT[^@lROD©S T - 3 3 - 1 5 BUV298AV NPN TRANSISTOR POWER MODULE ■ H IG H C U R R E N T P O W E R B IP O L A R M O D U L E ■ V E R Y L O W Rth J U N C T IO N C A S E


    OCR Scan     		PDF 7R2C1237 UV298AF 33-i5 BUV298AV BUV298AV BUV298AF sc04s30 T-91-20 O-240) tb rbb BUV298AF BUV298A

    Untitled

    Abstract: No abstract text available
    Text: / S T SGS-THOMSON c o r a m i * ! BUV298AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298AV

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    BUX98PI

    Abstract: ESM2012DV BUX98P ESM2030DV D45HS mj2955 TO-220 ESM2030 buw90
    Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE {V Vc-ao VcES VcEV V) 450 450 450 450 450 60 80 125 90 125 125 250 200 250 125 400 450 700 400 450 400 450 450 700 450 450 450 450 200 400 60 80 45 60 ao 1000 1000 1000 850 1000 120 160 250 160 250 160 300 250 300


    OCR Scan     		PDF BUV98AV BUV98V BUV298AV BUV298V BUW12A BUW48 BUW49 BUW50 BUW89 BUW90 BUX98PI ESM2012DV BUX98P ESM2030DV D45HS mj2955 TO-220 ESM2030

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


    OCR Scan     		PDF BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


    OCR Scan     		PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


    OCR Scan     		PDF 180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F