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    FCP25N60N Search Results

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    FCP25N60N Price and Stock

    Rochester Electronics LLC FCP25N60N

    MOSFET N-CH 600V TO-220-3
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    DigiKey FCP25N60N Bulk 75
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    onsemi FCP25N60N

    MOSFET N-CH 600V 25A TO220-3
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    DigiKey FCP25N60N Tube 50
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    onsemi FCP25N60N-F102

    MOSFET N-CH 600V 25A TO220-3
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    Newark FCP25N60N-F102 Bulk 100
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    Flip Electronics FCP25N60N-F102 2,400
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    Flip Electronics FCP25N60N-F102

    N-CHANNEL 600 V 25A (TC) 216W (T
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    DigiKey FCP25N60N-F102 Tube 300
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    onsemi FCP25N60N_F102

    Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FCP25N60N-F102)
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    Avnet Americas FCP25N60N_F102 Tube 0 Weeks, 2 Days 274
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    FCP25N60N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCP25N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220-3 Original PDF
    FCP25N60N_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A TO220-3 Original PDF
    FCP25N60N-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 25A TO220-3 Original PDF

    FCP25N60N Datasheets Context Search

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    Abstract: No abstract text available
    Text: FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCP25N60N

    FCP25N60N

    Abstract: F102 DIODE 83A mosfet 600V 25A
    Text: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCP25N60N F102 DIODE 83A mosfet 600V 25A

    fcp25n60

    Abstract: FCP25N60N
    Text: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		PDF FCP25N60N fcp25n60