HFW50N06 Search Results

HFW50N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BVDSS = 60 V RDS on = 18 mΩ HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW50N06  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI50N06 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances	Original	PDF	HFW50N06 HFI50N06 HFW50N06

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: BVDSS = 60 V RDS on = 18 mΩ HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW50N06  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI50N06 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

Original

PDF

HFW50N06 HFI50N06 HFW50N06