HN3C12F Search Results

HN3C12F Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN3C12F		Toshiba	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)		Scan	PDF
HN3C12F		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C12FU		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C12FU		Toshiba	Silicon NPN epitaxial planar type transistor for vhf-ufh low noise amplifier		Scan	PDF
HN3C12FU(TE85L)		Toshiba	TRANS GP BJT NPN 10V 0.015A 6(2-2J1A) T/R		Scan	PDF

HN3C12F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HN3C12FU Abstract: No abstract text available Text: TO SH IBA HN3C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	HN3C12FU HN3C12FU	PDF
transistor marking c3n Abstract: c3n transistor Text: TOSHIBA HN3C12F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN 3 • ■ ■ 'm V r1 1 F ■ U nit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	HN3C12F transistor marking c3n c3n transistor	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12FU V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	HN3C12FU	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 2 FU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	HN3C12FU	PDF
Untitled Abstract: No abstract text available Text: HN3C12FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3ri7Fll VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	HN3C12FU	PDF
HN3C12F Abstract: No abstract text available Text: TO SHIBA HN3C12F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12F Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	HN3C12F HN3C12F	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C12F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • h 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	HN3C12F	PDF
HN3C12FU Abstract: No abstract text available Text: TOSHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12FU V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	HN3C12FU HN3C12FU	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN3C12F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	HN3C12F	PDF
HN3C12F Abstract: No abstract text available Text: TO SHIBA HN3C12F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12F Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	HN3C12F HN3C12F	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
tbf819 Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。保守品種 1 形名代替品種形名代替品種	Original	04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A	PDF
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A	PDF
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066	PDF