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    HN3C12FU Search Results

    HN3C12FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C12FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C12FU Toshiba Silicon NPN epitaxial planar type transistor for vhf-ufh low noise amplifier Scan PDF
    HN3C12FU(TE85L) Toshiba TRANS GP BJT NPN 10V 0.015A 6(2-2J1A) T/R Scan PDF

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    HN3C12FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL


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    Abstract: No abstract text available
    Text: TOSHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12FU V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    Abstract: No abstract text available
    Text: TO SHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 2 FU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    Abstract: No abstract text available
    Text: HN3C12FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3ri7Fll VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


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    HN3C12FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12FU V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    PDF HN3C12FU HN3C12FU