IXFB44N100P Search Results

IXFB44N100P Price and Stock

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IXYS Corporation IXFB44N100P MOSFETs 44 Amps 1000V 0.22 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFB44N100P		572			1 $28.5 10 $28.5 100 $20.34 1000 $20.34 10000 $20.34	Buy Now
Newark	IXFB44N100P	Bulk	544		1	1 $29.64 10 $23.98 100 $22.38 1000 $22.38 10000 $22.38	Buy Now
Future Electronics	IXFB44N100P	Tube			300	1 - 10 - 100 $20.1 1000 $19.94 10000 $19.94	Buy Now
TTI	IXFB44N100P	Tube			300	1 - 10 - 100 - 1000 $20.34 10000 $20.34	Buy Now
TME	IXFB44N100P		282		1	1 $34.26 10 $30.27 100 $27.22 1000 $27.22 10000 $27.22	Buy Now
Littelfuse Inc IXFB44N100P DiscMosfetN-CH HiPerFET-Polar TO-264(3) \| Littelfuse IXFB44N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFB44N100P	Bulk		8 Weeks	25	1 - 10 - 100 $31.46 1000 $31.46 10000 $31.46	Get Quote
IXYS Integrated Circuits Division IXFB44N100P MOSFET DIS.44A 1000V N-CH PLUS264-3 HIPERFET THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFB44N100P					1 $37.58033 10 $37.58033 100 $35.1218 1000 $35.1218 10000 $35.1218	Get Quote

IXFB44N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFB44N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264		Original	PDF

IXFB44N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFB44N100P Abstract: IXFB44N100 44n10 44n100p DS99867A Text: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous	Original	IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D IXFB44N100P IXFB44N100 44n10 DS99867A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	IXFB44N100P 300ns PLUS264TM 44N100P 8-27-07-B	PDF
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF