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    IXGQ90N33 Search Results

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    IXGQ90N33 Price and Stock

    IXYS Corporation IXGQ90N33TCD1

    IGBT TRENCH 330V 90A TO-3P
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    DigiKey IXGQ90N33TCD1 Tube 30
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    IXGQ90N33 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXGQ90N33TBD1

    Abstract: IXGQ90N33 90n33 90N33TB IXgq90n ixgq90n33t
    Text: IXGQ90N33TBD1 Trench Gate IGBT VCES = = ICP VCE sat ≤ For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A 330V 360A 1.6V TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s


    Original     		IXGQ90N33TBD1 90N33TB 5-27-08-B IXGQ90N33TBD1 IXGQ90N33 90n33 IXgq90n ixgq90n33t PDF

    IXGQ90N33

    Abstract: 90n33 IXGQ90N33TB IC tl 072 IGBT I rms 45A IXGQ90 IXgq90n 90N33T
    Text: IXGQ90N33TB Trench Gate High Speed IGBT VCES = = ICP VCE sat ≤ 330V 360A 1.6V For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s


    Original     		IXGQ90N33TB 90N33TB 5-27-08-B IXGQ90N33 90n33 IXGQ90N33TB IC tl 072 IGBT I rms 45A IXGQ90 IXgq90n 90N33T PDF

    IXGQ90N33

    Abstract: 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc 90N33TC IXgq90n IXGQ90 TO-3P package
    Text: Preliminary Technical Information Plasma Display Power IGBT IXGQ90N33TCD4 Trench Gate High Speed Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s 360 A IDP TJ ≤ 150°C, tp ≤ 1μs


    Original     		IXGQ90N33TCD4 90N33TC 5-30-07-C IXGQ90N33 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc IXgq90n IXGQ90 TO-3P package PDF

    IXGQ90N33TCD1

    Abstract: ixgq90n33 IXGA90N33TC 90N33TCD1 90n33 90N33TC IXGQ90N33TC IXGQ90N33TCD
    Text: Trench Gate, High Speed, IGBTs IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 For PDP Applications VCES = ICP = VCE sat ≤ 330V 360A 1.80V 90N33TCD1 90N33TC Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 330 V VGES VGEM Continuous Transient ±20


    Original     		IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 90N33TC 90N33TCD1 IC110 O-263 062in. 5-30-07-C IXGQ90N33TCD1 ixgq90n33 90N33TCD1 90n33 90N33TC IXGQ90N33TCD PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF